GB753158A - Method of etching germanium or silicon - Google Patents

Method of etching germanium or silicon

Info

Publication number
GB753158A
GB753158A GB8113/54A GB811354A GB753158A GB 753158 A GB753158 A GB 753158A GB 8113/54 A GB8113/54 A GB 8113/54A GB 811354 A GB811354 A GB 811354A GB 753158 A GB753158 A GB 753158A
Authority
GB
United Kingdom
Prior art keywords
silicon
germanium
solution
hydrofluoric
etching germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8113/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB753158A publication Critical patent/GB753158A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Semi-conductor bodies of germanium or silicon are etched to remove surface irregularities by an etching solution, e.g. of hydrofluoric and nitric acids or of hydrofluoric acid and hydrogen peroxide, which has been purified by temporarily immersing germanium, silicon or boron in the solution. The immersion is stated to remove impurities such as copper, calcium, magnesium and iron. The immersed material may be in the form of a plate, bar or powder and the purification may be accelerated by negatively polarising the material with respect to the solution.
GB8113/54A 1953-03-25 1954-03-19 Method of etching germanium or silicon Expired GB753158A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE753158X 1953-03-25

Publications (1)

Publication Number Publication Date
GB753158A true GB753158A (en) 1956-07-18

Family

ID=6656316

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8113/54A Expired GB753158A (en) 1953-03-25 1954-03-19 Method of etching germanium or silicon

Country Status (1)

Country Link
GB (1) GB753158A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2974021A (en) * 1957-02-08 1961-03-07 Borowik Albert Process and composition for chemically treating titanium and its alloys
US3219542A (en) * 1961-07-19 1965-11-23 Chemetron Corp Process for producing phytosterol material from cucurbitaceae
DE1209844B (en) * 1958-10-08 1966-01-27 Telefunken Patent Solution for matt etching of semiconductor bodies

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2974021A (en) * 1957-02-08 1961-03-07 Borowik Albert Process and composition for chemically treating titanium and its alloys
DE1209844B (en) * 1958-10-08 1966-01-27 Telefunken Patent Solution for matt etching of semiconductor bodies
US3219542A (en) * 1961-07-19 1965-11-23 Chemetron Corp Process for producing phytosterol material from cucurbitaceae

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