CH393544A - Verfahren zur Herstellung eines Trägers für einen festen Halbleiter und nach diesem Verfahren hergestellte Träger - Google Patents

Verfahren zur Herstellung eines Trägers für einen festen Halbleiter und nach diesem Verfahren hergestellte Träger

Info

Publication number
CH393544A
CH393544A CH810161A CH810161A CH393544A CH 393544 A CH393544 A CH 393544A CH 810161 A CH810161 A CH 810161A CH 810161 A CH810161 A CH 810161A CH 393544 A CH393544 A CH 393544A
Authority
CH
Switzerland
Prior art keywords
carrier
production
solid semiconductor
carriers produced
carriers
Prior art date
Application number
CH810161A
Other languages
English (en)
Inventor
William Nippert Paul
Original Assignee
Nippert Electric Products Comp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippert Electric Products Comp filed Critical Nippert Electric Products Comp
Publication of CH393544A publication Critical patent/CH393544A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
CH810161A 1959-05-15 1961-07-11 Verfahren zur Herstellung eines Trägers für einen festen Halbleiter und nach diesem Verfahren hergestellte Träger CH393544A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81355259A 1959-05-15 1959-05-15
US43699A US3199000A (en) 1959-05-15 1960-07-11 Mount for semiconductors

Publications (1)

Publication Number Publication Date
CH393544A true CH393544A (de) 1965-06-15

Family

ID=26720738

Family Applications (1)

Application Number Title Priority Date Filing Date
CH810161A CH393544A (de) 1959-05-15 1961-07-11 Verfahren zur Herstellung eines Trägers für einen festen Halbleiter und nach diesem Verfahren hergestellte Träger

Country Status (4)

Country Link
US (1) US3199000A (de)
CH (1) CH393544A (de)
DE (1) DE1280419B (de)
NL (2) NL120008C (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL295109A (de) * 1962-12-26
US3268779A (en) * 1963-11-06 1966-08-23 Int Rectifier Corp Hermetically sealed semiconductor device
US3524350A (en) * 1969-01-27 1970-08-18 Hartley Gove Sons Inc Card-mounted thermometer and method of making the same
US3918625A (en) * 1974-10-03 1975-11-11 Nippert Co Method of making a double extruded semiconductor joint
US4192063A (en) * 1975-12-10 1980-03-11 Yoshio Sato Method for manufacturing a base of a semi-conductor device
JPS5271176A (en) * 1975-12-11 1977-06-14 Sato Tokuo Method of manufacturing base for pressure contact type semiconductor
US4049185A (en) * 1977-03-11 1977-09-20 The Nippert Company Method of forming double extruded mount
US4149310A (en) * 1978-03-27 1979-04-17 The Nippert Company Method of making a heat sink mounting
US4193445A (en) * 1978-06-29 1980-03-18 International Business Machines Corporation Conduction cooled module
US4206896A (en) * 1978-11-28 1980-06-10 Cadillac John G Mount for a power rescue tool
US4285003A (en) * 1979-03-19 1981-08-18 Motorola, Inc. Lower cost semiconductor package with good thermal properties
JP3971296B2 (ja) * 2002-12-27 2007-09-05 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合基板およびその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2707252A (en) * 1955-04-26 Metal rectifier assemblies
US2754393A (en) * 1952-02-14 1956-07-10 Koldweld Corp Electrical contact and method of making same
CH170577A (de) * 1933-09-01 1934-07-15 Rau Fa G Verfahren zur Herstellung von Nieten für Kontaktzwecke.
DE682313C (de) * 1937-05-01 1939-10-12 Fr Kammerer A G Verfahren zur Herstellung von Kontaktnieten mit an der Kontaktstelle verdickter Auflage aus edlerem Metall
US2320993A (en) * 1941-01-31 1943-06-08 Taylor Instr Compagnies Thermometer construction
US2471663A (en) * 1944-11-13 1949-05-31 Int Nickel Co Method for producing cladded metal cooking utensils
US2473371A (en) * 1945-12-29 1949-06-14 Mallory & Co Inc P R Method of making contacts
US2549424A (en) * 1947-03-29 1951-04-17 Rca Corp Filter element useful in radio circuits
US2667526A (en) * 1951-08-29 1954-01-26 Max J Stumbock Method of making nickel-cadmium batteries
US2739369A (en) * 1952-03-28 1956-03-27 Metals & Controls Corp Method of making electrical contacts
US2726357A (en) * 1952-10-22 1955-12-06 Columbia Broadcasting Syst Inc Semiconductor device
US2817797A (en) * 1953-11-23 1957-12-24 United Carr Fastener Corp Rectifier
NL101591C (de) * 1956-03-22
NL217849A (de) * 1956-06-12
US2834102A (en) * 1956-09-28 1958-05-13 Metals & Controls Corp Solid-phase bonding of metals
US2964830A (en) * 1957-01-31 1960-12-20 Westinghouse Electric Corp Silicon semiconductor devices
US2922092A (en) * 1957-05-09 1960-01-19 Westinghouse Electric Corp Base contact members for semiconductor devices
US2864980A (en) * 1957-06-10 1958-12-16 Gen Electric Sealed current rectifier
FR1258800A (fr) * 1959-06-10 1961-04-14 Philips Nv Procédé de fabrication de dispositifs à semi-conducteurs

Also Published As

Publication number Publication date
US3199000A (en) 1965-08-03
DE1280419B (de) 1968-10-17
NL266908A (de)
NL120008C (de)

Similar Documents

Publication Publication Date Title
CH421304A (de) Verfahren zur Herstellung von Halbleiterbauelementen und nach dem Verfahren hergestelltes Halbleiterbauelement
CH416086A (de) Verfahren zur Herstellung von Gegenständen aus Polyolefinen
CH356864A (de) Verfahren zur Herstellung von feinen Fäden aus hochmolekularen aliphatischen Polyolefinen
AT244901B (de) Verfahren zur Herstellung von mechanisch festen Koksstücken
CH374798A (de) Verfahren zur Herstellung von Formgebilden und nach diesem Verfahren hergestellte Formgebilde
CH393544A (de) Verfahren zur Herstellung eines Trägers für einen festen Halbleiter und nach diesem Verfahren hergestellte Träger
CH362150A (de) Verfahren zur Herstellung von Halbleiterbauelementen und nach diesem Verfahren hergestelltes Halbleiterbauelement
CH374770A (de) Verfahren zur Herstellung von Silizium-Halbleiterelementen und nach dem Verfahren hergestellter Silizium-Leistungsgleichrichter
CH386149A (de) Verfahren zur Herstellung eines Reissverschlusses
CH381142A (de) Verfahren zur Herstellung von Zigarren und nach dem Verfahren hergestellte Zigarre
CH355232A (de) Verfahren zur Herstellung eines Kochgerätes und nach diesem Verfahren hergestelltes Kochgerät
CH382296A (de) Verfahren zur Herstellung von einkristallinem Halbleitermaterial
CH386113A (de) Verfahren zur Herstellung verstreckter Gebilde aus hochmolekularen, linearen Polycarbonaten
CH396872A (de) Verfahren zur Herstellung neuer Harnstoffe
CH406441A (de) Verfahren zur Herstellung einer Kontaktelektrode für Halbleiteranordnungen und nach diesem Verfahren hergestellte Kontaktelektrode
CH381328A (de) Verfahren zur Herstellung eines Diffusionstransistors und nach diesem Verfahren hergestellter Diffusionstransistor
CH397266A (de) Verfahren zur Herstellung von Magnetogrammträgern
CH348208A (de) Verfahren zur Herstellung von Halbleiteranordnungen
AT242160B (de) Verfahren zur Herstellung von Harnstoff
CH389781A (de) Verfahren zur Herstellung von Halbleiteranordnungen
CH393540A (de) Verfahren zur Herstellung von Halbleiteranordnungen mit einkristallinem Halbleiterkörper
CH409574A (de) Verfahren zur Herstellung eines Halbleiter-Bauelementes
CH382685A (de) Verfahren zur Herstellung eines Cordgewebes und nach diesem Verfahren hergestelltes Cordgewebe
CH379658A (de) Verfahren zur Herstellung von halbleitenden Körpern, Vorrichtung zur Ausführung des Verfahrens und nach dem Verfahren hergestellter halbleitender Körper
AT220332B (de) Verfahren zur Herstellung von Rahmen und nach dem Verfahren hergestellter Rahmen