BE471989A - - Google Patents

Info

Publication number
BE471989A
BE471989A BE471989DA BE471989A BE 471989 A BE471989 A BE 471989A BE 471989D A BE471989D A BE 471989DA BE 471989 A BE471989 A BE 471989A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE471989A publication Critical patent/BE471989A/xx
Priority claimed from GB8997/41A external-priority patent/GB592659A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
BE471989D 1941-07-16 BE471989A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8997/41A GB592659A (en) 1941-07-16 Improvements in crystal contacts of which one element is germanium

Publications (1)

Publication Number Publication Date
BE471989A true BE471989A (en:Method)

Family

ID=9863366

Family Applications (1)

Application Number Title Priority Date Filing Date
BE471989D BE471989A (en:Method) 1941-07-16

Country Status (4)

Country Link
US (1) US2588008A (en:Method)
BE (1) BE471989A (en:Method)
CH (1) CH261491A (en:Method)
FR (1) FR944003A (en:Method)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES207331A1 (es) * 1952-01-21 1953-03-01 Sogo Kenkyujo Zh Sekitan Un método de recuperar germanio desde carbones
NL93089C (en:Method) * 1953-02-03
DE966879C (de) * 1953-02-21 1957-09-12 Standard Elektrik Ag Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz
US2809103A (en) * 1953-11-10 1957-10-08 Sylvania Electric Prod Fabrication of semiconductor elements
DE1157709B (de) * 1953-12-10 1963-11-21 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes mit Spitzenkontaktelektroden auf polierter und dann aufgerauhter Oberflaeche des einkristallinen Halbleiterkoerpers
US2827369A (en) * 1953-12-23 1958-03-18 Metallurg De Hoboken Soc Gen Method of separating germanium from primary materials containing germanium and other, less volatile, elements
US2885364A (en) * 1955-05-31 1959-05-05 Columbia Broadcasting Syst Inc Method of treating semiconducting materials for electrical devices
NL271850A (en:Method) * 1961-02-03
US3102786A (en) * 1961-06-14 1963-09-03 American Metal Climax Inc Purification of germanium tetrachloride
CH413119A (de) * 1964-09-22 1966-05-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung von Halbleitergeräten

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1708571A (en) * 1925-02-21 1929-04-09 Carborundum Co Rectifying element
GB523216A (en) * 1938-12-28 1940-07-09 Westinghouse Brake & Signal Improvements relating to the manufacture of alternating current rectifiers
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
US2402839A (en) * 1941-03-27 1946-06-25 Bell Telephone Labor Inc Electrical translating device utilizing silicon

Also Published As

Publication number Publication date
FR944003A (fr) 1949-03-24
CH261491A (de) 1949-05-15
US2588008A (en) 1952-03-04

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