CH261491A - Verfahren zur Herstellung eines Kristallgleichrichters. - Google Patents

Verfahren zur Herstellung eines Kristallgleichrichters.

Info

Publication number
CH261491A
CH261491A CH261491DA CH261491A CH 261491 A CH261491 A CH 261491A CH 261491D A CH261491D A CH 261491DA CH 261491 A CH261491 A CH 261491A
Authority
CH
Switzerland
Prior art keywords
manufacturing
crystal rectifier
rectifier
crystal
Prior art date
Application number
Other languages
English (en)
Inventor
Limited The General El Company
Original Assignee
Gen Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB899741A external-priority patent/GB592659A/en
Application filed by Gen Electric Co Ltd filed Critical Gen Electric Co Ltd
Publication of CH261491A publication Critical patent/CH261491A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH261491D 1941-07-16 1947-03-10 Verfahren zur Herstellung eines Kristallgleichrichters. CH261491A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB899741A GB592659A (en) 1941-07-16 Improvements in crystal contacts of which one element is germanium

Publications (1)

Publication Number Publication Date
CH261491A true CH261491A (de) 1949-05-15

Family

ID=9863366

Family Applications (1)

Application Number Title Priority Date Filing Date
CH261491D CH261491A (de) 1941-07-16 1947-03-10 Verfahren zur Herstellung eines Kristallgleichrichters.

Country Status (4)

Country Link
US (1) US2588008A (de)
BE (1) BE471989A (de)
CH (1) CH261491A (de)
FR (1) FR944003A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1157709B (de) * 1953-12-10 1963-11-21 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes mit Spitzenkontaktelektroden auf polierter und dann aufgerauhter Oberflaeche des einkristallinen Halbleiterkoerpers
DE1257536B (de) * 1964-09-22 1967-12-28 Bbc Brown Boveri & Cie Verfahren zur Verbesserung der Benetzbarkeit von an Silizium-Halbleiterkoerpern anlegierten Goldkontakten

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES207331A1 (es) * 1952-01-21 1953-03-01 Sogo Kenkyujo Zh Sekitan Un método de recuperar germanio desde carbones
NL93089C (de) * 1953-02-03
DE966879C (de) * 1953-02-21 1957-09-12 Standard Elektrik Ag Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz
US2809103A (en) * 1953-11-10 1957-10-08 Sylvania Electric Prod Fabrication of semiconductor elements
US2827369A (en) * 1953-12-23 1958-03-18 Metallurg De Hoboken Soc Gen Method of separating germanium from primary materials containing germanium and other, less volatile, elements
US2885364A (en) * 1955-05-31 1959-05-05 Columbia Broadcasting Syst Inc Method of treating semiconducting materials for electrical devices
NL271850A (de) * 1961-02-03
US3102786A (en) * 1961-06-14 1963-09-03 American Metal Climax Inc Purification of germanium tetrachloride

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1708571A (en) * 1925-02-21 1929-04-09 Carborundum Co Rectifying element
GB523216A (en) * 1938-12-28 1940-07-09 Westinghouse Brake & Signal Improvements relating to the manufacture of alternating current rectifiers
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
US2402839A (en) * 1941-03-27 1946-06-25 Bell Telephone Labor Inc Electrical translating device utilizing silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1157709B (de) * 1953-12-10 1963-11-21 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes mit Spitzenkontaktelektroden auf polierter und dann aufgerauhter Oberflaeche des einkristallinen Halbleiterkoerpers
DE1257536B (de) * 1964-09-22 1967-12-28 Bbc Brown Boveri & Cie Verfahren zur Verbesserung der Benetzbarkeit von an Silizium-Halbleiterkoerpern anlegierten Goldkontakten

Also Published As

Publication number Publication date
US2588008A (en) 1952-03-04
BE471989A (de)
FR944003A (fr) 1949-03-24

Similar Documents

Publication Publication Date Title
CH236931A (de) Verfahren zur Herstellung eines Disazofarbstoffes.
CH261491A (de) Verfahren zur Herstellung eines Kristallgleichrichters.
CH230075A (de) Verfahren zur Herstellung eines Farbstoffes.
CH263779A (de) Verfahren zur Herstellung eines Kristall-Gleichrichters.
CH214717A (de) Verfahren zur Herstellung eines Selengleichrichters.
CH222059A (de) Verfahren zur Herstellung eines Trockengleichrichterventils.
CH219656A (de) Verfahren zur Herstellung eines sauren Wollfarbstoffes.
CH220220A (de) Verfahren zur Herstellung eines sauren Wollfarbstoffes.
CH231187A (de) Verfahren zur Herstellung eines Monoazofarbstoffes.
CH231186A (de) Verfahren zur Herstellung eines Monoazofarbstoffes.
CH231184A (de) Verfahren zur Herstellung eines Monoazofarbstoffes.
CH231183A (de) Verfahren zur Herstellung eines Monoazofarbstoffes.
CH231182A (de) Verfahren zur Herstellung eines Monoazofarbstoffes.