GB733566A - Improvements in or relating to lift modulators - Google Patents
Improvements in or relating to lift modulatorsInfo
- Publication number
- GB733566A GB733566A GB2081152A GB2081152A GB733566A GB 733566 A GB733566 A GB 733566A GB 2081152 A GB2081152 A GB 2081152A GB 2081152 A GB2081152 A GB 2081152A GB 733566 A GB733566 A GB 733566A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- light
- path
- modulator
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 3
- 230000005855 radiation Effects 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 150000003346 selenoethers Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
- Lasers (AREA)
Abstract
733,566. Light-valves. NATIONAL RESEARCH DEVELOPMENT CORPORATION. Oct. 19, 1953 [Nov. 6, 1952], No. 28011/52. Class 40 (3). A valve or modulator for controlling radiations in the infra-red wavelength region comprises a body of transistor material forming a path for the radiation to be controlled and means for varying the density of charge carriers within said body to control the absorption of radiation in the path. In Fig. 1 a crystal 1 of germanium carries a base electrode 2, and further electrodes 3, mounted in parallel, are arranged so that their contact points are spaced not less than twice the length of the carrier diffusion path within the material. The crystal may be mounted with the electrode 2 on a block of insulating material encircled by a coil of wire with its turns spaced as indicated for the contact points and engaging the face of the crystal opposite that carrying the base electrode, Fig. 2 (not shown). In the operating circuit, Fig. 3, a fixed bias is provided by a battery 7 and the modulating voltage at terminal 12 is fed to the grid of a valve 11, the output being applied via the secondary winding 8 of a transformer 9 to vary the emergent light beam 6 by the operation of the modulator on light from a fixed source 5. The crystal 1 may be tapered at its sides 14 from a comparatively large rectangular end surface facing the incident light to an elongated area, and is mounted on an insulating block 4 with a coil 3 attached to respective terminals 13, Figs. 4a, 4b. In a modification, Fig. 4c (not shown), one of the surfaces 14 is plane and perpendicular to the larger end surface of the crystal. The operating conditions of the device are explained mathematically in the Specification. Germanium and silicon are referred to as suitable transistor materials and reference is also made to semi-conductors, such as the sulphide, telluride and selenide of lead. A quarterwave matching layer, preferably of selenium, may be applied to the incident or emergent surface of the crystal.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2081152A GB733566A (en) | 1952-11-06 | 1952-11-06 | Improvements in or relating to lift modulators |
FR1089676D FR1089676A (en) | 1952-11-06 | 1953-11-04 | Modulators |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2081152A GB733566A (en) | 1952-11-06 | 1952-11-06 | Improvements in or relating to lift modulators |
Publications (1)
Publication Number | Publication Date |
---|---|
GB733566A true GB733566A (en) | 1955-07-13 |
Family
ID=10152083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2081152A Expired GB733566A (en) | 1952-11-06 | 1952-11-06 | Improvements in or relating to lift modulators |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR1089676A (en) |
GB (1) | GB733566A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3153691A (en) * | 1962-04-12 | 1964-10-20 | Bell Telephone Labor Inc | Light modulator |
US3259016A (en) * | 1962-11-28 | 1966-07-05 | Rca Corp | Tunable semiconductor optical modulator |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL218462A (en) * | 1957-06-26 |
-
1952
- 1952-11-06 GB GB2081152A patent/GB733566A/en not_active Expired
-
1953
- 1953-11-04 FR FR1089676D patent/FR1089676A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3153691A (en) * | 1962-04-12 | 1964-10-20 | Bell Telephone Labor Inc | Light modulator |
US3259016A (en) * | 1962-11-28 | 1966-07-05 | Rca Corp | Tunable semiconductor optical modulator |
Also Published As
Publication number | Publication date |
---|---|
FR1089676A (en) | 1955-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4782222A (en) | Bulk avalanche semiconductor switch using partial light penetration and inducing field compression | |
GB757536A (en) | Improvements in electric control apparatus | |
US3121203A (en) | Semiconductor maser with modulating means | |
JPS53123074A (en) | Semiconductor device | |
GB1305801A (en) | ||
GB733566A (en) | Improvements in or relating to lift modulators | |
GB1062202A (en) | Improvements in or relating to light emitting transistor systems | |
JPS52137279A (en) | Semiconductor device for optical coupling | |
US4347437A (en) | Light activated switching by the avalanche effect in semiconductors | |
US3475078A (en) | Gunn-effect light modulator | |
US3791717A (en) | Light modulation apparatus | |
GB1079204A (en) | Improvements in and relating to thin film electrical devices | |
GB1376492A (en) | Insulated gate field effect transistors and methods of making them | |
JPS55156381A (en) | Semiconductor laser | |
GB1080697A (en) | Coherent radiation generator | |
US3417246A (en) | Frequency modulated semiconductor junction laser | |
JPS566482A (en) | Light controled semiconductor light emitting element | |
JPS52125286A (en) | Radiating device for bluelight | |
JPS54123886A (en) | Semiconductor laser unit for high speed modulation | |
GB842187A (en) | Light amplifier and storage device | |
GB1143480A (en) | A method of forming aligned oxide patterns by electrolytic action on opposite surfaces of a wafer of semiconductor material | |
JPS52155079A (en) | Semiconductor laser device | |
JPS56131973A (en) | Luminiscent device | |
JPS6484672A (en) | Photoelectric conversion device | |
JPS556841A (en) | Planar type semiconductor device |