JPS52155079A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS52155079A JPS52155079A JP7193976A JP7193976A JPS52155079A JP S52155079 A JPS52155079 A JP S52155079A JP 7193976 A JP7193976 A JP 7193976A JP 7193976 A JP7193976 A JP 7193976A JP S52155079 A JPS52155079 A JP S52155079A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser device
- flowing
- horizontal direction
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To lower oscillation threshold values, increase light output lead-out efficiency and make light intensity distribution uniform by flowing a bias current parallel to junction faces in a semiconductor laser comprising forming of double hetero junctions in a horizontal direction over a substrate and providing diffraction grating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7193976A JPS52155079A (en) | 1976-06-18 | 1976-06-18 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7193976A JPS52155079A (en) | 1976-06-18 | 1976-06-18 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52155079A true JPS52155079A (en) | 1977-12-23 |
Family
ID=13474970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7193976A Pending JPS52155079A (en) | 1976-06-18 | 1976-06-18 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52155079A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5542393U (en) * | 1978-09-14 | 1980-03-18 | ||
JP2002313562A (en) * | 2001-04-16 | 2002-10-25 | Seiko Epson Corp | Light emitting element and method of manufacturing light emitting element |
-
1976
- 1976-06-18 JP JP7193976A patent/JPS52155079A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5542393U (en) * | 1978-09-14 | 1980-03-18 | ||
JP2002313562A (en) * | 2001-04-16 | 2002-10-25 | Seiko Epson Corp | Light emitting element and method of manufacturing light emitting element |
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