GB842187A - Light amplifier and storage device - Google Patents
Light amplifier and storage deviceInfo
- Publication number
- GB842187A GB842187A GB10122/58A GB1012258A GB842187A GB 842187 A GB842187 A GB 842187A GB 10122/58 A GB10122/58 A GB 10122/58A GB 1012258 A GB1012258 A GB 1012258A GB 842187 A GB842187 A GB 842187A
- Authority
- GB
- United Kingdom
- Prior art keywords
- slots
- matrix
- layer
- blank
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 abstract 5
- 239000011521 glass Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
842,187. Electroluminescent devices. SYLVANIA ELECTRIC PRODUCTS Inc. March 28, 1958 [April 9, 1957], No. 10122/58. Class 39(1). A light amplifying or storage device comprises an electroluminescent layer 23, a matrix including a plurality of discrete transparent pedestals, a layer 33 of photoconductive material disposed on the matrix, electrodes 22, 34 and means on the matrix for limiting the current flow through the photoconductive material to predetermined areas thereof. As shown the limiting means comprises a conductive film 15 covering all but the predetermined areas of the layer 33. The electrodes comprise conductive films 15 on the top and bottom of the matrix, a wire mesh 34 and a conductive film 22 on the remote side of the electroluminescent layer. An opaque webbing 25 may be disposed between the pedestals to prevent optical feedback. The device is made by cutting a first plurality of parallel slots in one surface of a glass blank, cutting a similar plurality of parallel slots in the opposite surface of the blank, the slots on the two surfaces being aligned and leaving glass bridges between the bottom surfaces of the slots, applying the conductive film 15, cutting a plurality of slots narrower than the first centrally through the bridges leaving projections having opposed faces in the slots and applying the photoconductive layer to the blank, the material being in direct contact with the glass of the blank only on the opposed faces of the projections. The photoconductive material is then removed to expose the conductive film on the upper surfaces of the pedestal. The matrix is then glass soldered to the electroluminescent layer. Specifications 731,364, 773,997 and 842,186 are referred to.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US842187XA | 1957-04-09 | 1957-04-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB842187A true GB842187A (en) | 1960-07-20 |
Family
ID=22183556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB10122/58A Expired GB842187A (en) | 1957-04-09 | 1958-03-28 | Light amplifier and storage device |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB842187A (en) |
-
1958
- 1958-03-28 GB GB10122/58A patent/GB842187A/en not_active Expired
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