GB596585A - Improvements in or relating to selenium rectifiers or light-sensitive devices - Google Patents

Improvements in or relating to selenium rectifiers or light-sensitive devices

Info

Publication number
GB596585A
GB596585A GB24520/44A GB2452044A GB596585A GB 596585 A GB596585 A GB 596585A GB 24520/44 A GB24520/44 A GB 24520/44A GB 2452044 A GB2452044 A GB 2452044A GB 596585 A GB596585 A GB 596585A
Authority
GB
United Kingdom
Prior art keywords
light
cadmium
relating
sensitive devices
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24520/44A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric International Co
Original Assignee
Westinghouse Electric International Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric International Co filed Critical Westinghouse Electric International Co
Publication of GB596585A publication Critical patent/GB596585A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02425Conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02557Sulfides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108Provision of discrete insulating layers, i.e. non-genetic barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Thermistors And Varistors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
GB24520/44A 1943-12-15 1944-12-07 Improvements in or relating to selenium rectifiers or light-sensitive devices Expired GB596585A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US514371A US2488369A (en) 1943-12-15 1943-12-15 Selenium rectifier

Publications (1)

Publication Number Publication Date
GB596585A true GB596585A (en) 1948-01-07

Family

ID=24046859

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24520/44A Expired GB596585A (en) 1943-12-15 1944-12-07 Improvements in or relating to selenium rectifiers or light-sensitive devices

Country Status (6)

Country Link
US (1) US2488369A (de)
CH (1) CH248334A (de)
DE (1) DE884847C (de)
FR (1) FR988428A (de)
GB (1) GB596585A (de)
NL (1) NL70500C (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968580C (de) * 1948-10-02 1958-03-06 Standard Elektrik Ag Verfahren zur Herstellung von Trockengleichrichtern
DE973817C (de) * 1951-03-05 1960-06-15 Licentia Gmbh Verfahren zur Herstellung eines Trockengleichrichters
US2901348A (en) * 1953-03-17 1959-08-25 Haloid Xerox Inc Radiation sensitive photoconductive member
US2853663A (en) * 1954-07-08 1958-09-23 Vickers Inc Power transmission
NL204284A (de) * 1955-02-15
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
US2886434A (en) * 1955-06-06 1959-05-12 Horizons Inc Protected photoconductive element and method of making same
DE1034290B (de) * 1956-02-07 1958-07-17 Zeiss Jena Veb Carl Verfahren zur Erhoehung der Empfindlichkeit, insbesondere der Ultrarot-Empfindlichkeit, von fuer den Ultrarot-Bereich sensibilisierten Selen-Sperrschichtzellen
DE1090768B (de) * 1957-05-11 1960-10-13 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern
US3023121A (en) * 1959-08-13 1962-02-27 Robert L Dyar Method of constructing abrasive coated cylinders

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB439774A (en) * 1934-03-21 1935-12-13 British Thomson Houston Co Ltd Improvements relating to photo-electric cells and methods of manufacturing the same
US2121603A (en) * 1936-05-30 1938-06-21 Westinghouse Electric & Mfg Co Method of producing selenium rectifiers
DE916085C (de) * 1937-11-01 1954-08-02 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
FR851651A (fr) * 1938-09-21 1940-01-12 Westinghouse Freins & Signaux Perfectionnements à la fabrication de dispositifs à conductibilité asymétrique
BE436627A (de) * 1938-10-24
NL96218C (de) * 1939-01-11
DE760089C (de) * 1940-04-24 1954-08-16 Siemens Schuckertwerke A G Verfahren zur Verbesserung der Sperrwirkung von Selengleichrichtern
DE640567C (de) * 1966-09-08 1937-01-07 Siemens Schuckertwerke Akt Ges Trockenplattengleichrichter

Also Published As

Publication number Publication date
DE884847C (de) 1953-07-30
CH248334A (de) 1947-04-30
FR988428A (fr) 1951-08-27
NL70500C (de) 1900-01-01
US2488369A (en) 1949-11-15

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