GB537251A - Improvements in or relating to selenium rectifiers and improved method of producing the same - Google Patents
Improvements in or relating to selenium rectifiers and improved method of producing the sameInfo
- Publication number
- GB537251A GB537251A GB18949/39A GB1894939A GB537251A GB 537251 A GB537251 A GB 537251A GB 18949/39 A GB18949/39 A GB 18949/39A GB 1894939 A GB1894939 A GB 1894939A GB 537251 A GB537251 A GB 537251A
- Authority
- GB
- United Kingdom
- Prior art keywords
- selenium
- relating
- producing
- same
- june
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title abstract 6
- 239000011669 selenium Substances 0.000 title abstract 6
- 229910052711 selenium Inorganic materials 0.000 title abstract 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 229910000925 Cd alloy Inorganic materials 0.000 abstract 1
- 229910001297 Zn alloy Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000005030 aluminium foil Substances 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
537,251. Coating with selenium. NURNBERGER SCHRAUBENFABRIK GES. June 29, 1939, No. 18949. Convention date, June 1. [Class 82 (ii)] [Also in Group XXXVI] A thin layer of selenium in a plastic amorphous state at 160‹-170‹C. is applied to a foil of aluminium, for example, cooled, and the selenium face applied to an electrode plate, such as of nickel-plated iron, rolled to level off the layer and remove air, heated preferably to about 170‹C. to effect the crystallization of the selenium and stripped of the aluminium foil; surface amorphous selenium is then removed by vaporising at 215-219‹C. and finally a counter-electrode sprayed on, for example, of an alloy of zinc and cadmium, at such a temperature that a granular layer is produced. Specification 522,755 is referred to.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE537251X | 1939-06-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB537251A true GB537251A (en) | 1941-06-16 |
Family
ID=6557650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB18949/39A Expired GB537251A (en) | 1939-06-01 | 1939-06-29 | Improvements in or relating to selenium rectifiers and improved method of producing the same |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB537251A (en) |
-
1939
- 1939-06-29 GB GB18949/39A patent/GB537251A/en not_active Expired
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