GB2375880A9 - A conductor for a cryogenic device - Google Patents

A conductor for a cryogenic device

Info

Publication number
GB2375880A9
GB2375880A9 GB0206371A GB0206371A GB2375880A9 GB 2375880 A9 GB2375880 A9 GB 2375880A9 GB 0206371 A GB0206371 A GB 0206371A GB 0206371 A GB0206371 A GB 0206371A GB 2375880 A9 GB2375880 A9 GB 2375880A9
Authority
GB
United Kingdom
Prior art keywords
conductor
cryogenic device
coating
noble metal
inner conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0206371A
Other versions
GB2375880A (en
GB0206371D0 (en
Inventor
Andreas Grasi
Rudolf Kameter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus DS GmbH
Original Assignee
Astrium GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Astrium GmbH filed Critical Astrium GmbH
Publication of GB0206371D0 publication Critical patent/GB0206371D0/en
Publication of GB2375880A publication Critical patent/GB2375880A/en
Publication of GB2375880A9 publication Critical patent/GB2375880A9/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/4516—Iron (Fe) as principal constituent
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    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45669—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45673—Rhodium (Rh) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
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    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01046—Palladium [Pd]
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    • H01L2924/01058—Cerium [Ce]
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    • H01L2924/01068—Erbium [Er]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01077—Iridium [Ir]
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    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Abstract

A metallic conductor 3 is described comprising an inner conductor 1 and a coating 2 of a noble metal or an alloy of a noble metal and at least one sub-group element, the thick-ness of the inner conductor D being from 1 mm to 0.01 mm and the thickness of the coating d being from 1 žm to 1 nm. A cryogenic device having such a conductor is also described.
GB0206371A 2001-03-19 2002-03-18 A conductor for a cryogenic device Withdrawn GB2375880A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10113492A DE10113492B4 (en) 2001-03-19 2001-03-19 Electrically conductive wire for applications in low temperature ranges

Publications (3)

Publication Number Publication Date
GB0206371D0 GB0206371D0 (en) 2002-05-01
GB2375880A GB2375880A (en) 2002-11-27
GB2375880A9 true GB2375880A9 (en) 2002-12-19

Family

ID=7678214

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0206371A Withdrawn GB2375880A (en) 2001-03-19 2002-03-18 A conductor for a cryogenic device

Country Status (4)

Country Link
DE (1) DE10113492B4 (en)
FR (1) FR2822288A1 (en)
GB (1) GB2375880A (en)
IT (1) ITMI20020483A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101019811B1 (en) 2005-01-05 2011-03-04 신닛테츠 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
KR101687597B1 (en) * 2015-01-19 2016-12-20 엠케이전자 주식회사 Bonding wire

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621354A (en) * 1979-07-30 1981-02-27 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor element
JPS56118344A (en) * 1980-02-23 1981-09-17 Toshiba Corp Bonding wire
JPS60128232A (en) * 1983-12-14 1985-07-09 Furukawa Electric Co Ltd:The Electrical contact material
JPS6297360A (en) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device
JPH0266101A (en) * 1988-09-01 1990-03-06 Matsushita Electric Ind Co Ltd Electric conductive particles and manufacture thereof
JPH0412402A (en) * 1990-04-27 1992-01-17 Fujikura Ltd Extremely thin conductor and extremely thin enamel wire
DE69116976T2 (en) * 1990-10-18 1996-10-02 Sumitomo Electric Industries Fuse element
JPH0547294A (en) * 1990-10-18 1993-02-26 Sumitomo Electric Ind Ltd Conductor for fuse
DE4125980A1 (en) * 1991-08-06 1993-02-11 Heraeus Sensor Gmbh Temp.-resistant connector wire - consists of a highly conductive core and a platinum@-rich mantle into which gold@ has been diffused to allow easier connection
DE4311872C2 (en) * 1993-04-10 1998-07-02 Heraeus Gmbh W C Lead frames for integrated circuits
US5704993A (en) * 1995-10-10 1998-01-06 The Regents Of The Univerisity Of California, Office Of Technology Transfer High conductivity composite metal
DE19606116A1 (en) * 1996-02-20 1997-08-21 Berkenhoff Gmbh Electrical contact elements
JPH11243111A (en) * 1998-02-25 1999-09-07 Noge Denki Kogyo:Kk Gold-plated bonding wire and manufacture thereof
DE19827521C1 (en) * 1998-06-22 1999-07-29 Heraeus Gmbh W C Aluminum wire bonded to a substrate having a bondable metallic coating

Also Published As

Publication number Publication date
FR2822288A1 (en) 2002-09-20
ITMI20020483A0 (en) 2002-03-08
DE10113492B4 (en) 2005-12-01
ITMI20020483A1 (en) 2003-09-08
GB2375880A (en) 2002-11-27
GB0206371D0 (en) 2002-05-01
DE10113492A1 (en) 2002-10-02

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