JPH0547294A - Conductor for fuse - Google Patents
Conductor for fuseInfo
- Publication number
- JPH0547294A JPH0547294A JP24798591A JP24798591A JPH0547294A JP H0547294 A JPH0547294 A JP H0547294A JP 24798591 A JP24798591 A JP 24798591A JP 24798591 A JP24798591 A JP 24798591A JP H0547294 A JPH0547294 A JP H0547294A
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- conductor
- fuse conductor
- wire
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45611—Tin (Sn) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45616—Lead (Pb) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coating With Molten Metal (AREA)
- Conductive Materials (AREA)
- Fuses (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、定格以上の過電流が
流れたときに瞬時に断線するように機能するヒューズ用
導体に関し、特にＩＣ、およびトランジスタ等の半導体
装置やコンデンサ等の回路部品の内部に組込まれ、これ
らの装置や部品に過電流が流れたときに、回路をオープ
ンにし、これらの装置や部品の焼損を防止するように機
能するヒューズ用導体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductor for a fuse that functions to instantaneously disconnect when an overcurrent exceeding a rating flows, and particularly to a semiconductor device such as an IC and a transistor, or a circuit component such as a capacitor. The present invention relates to a fuse conductor that is incorporated inside and that functions to open a circuit and prevent burnout of these devices and parts when an overcurrent flows through these devices and parts.
【０００２】さらに、ヒューズ素子のエレメントとして
使用し過電流を防止したり、回路の一部に直接配線し過
電流を防止するように機能するヒューズ用導体に関する
ものである。Further, the present invention relates to a fuse conductor which is used as an element of a fuse element to prevent an overcurrent, or which is directly wired to a part of a circuit and functions to prevent an overcurrent.
【０００３】[0003]
【従来の技術】従来の一般的なヒューズとしては、金属
学会編集「金属便覧（昭和５７年１２月２２日改定第４
版第１００７頁）に記載されているように、Ｐｂ、Ｚｎ
またはＰｂ−Ｓｎ合金が用いられている。これらの金属
または合金からなるヒューズ用導体は、過電流のジュー
ル熱によって溶断して電気回路を開く。外気温に左右さ
れずに溶断電流を精密に決めようとする場合は、タング
ステン線からなるヒューズ用導体が使用されることもあ
る。また、加熱雰囲気の過熱によって溶断するタイプの
ヒューズには、低温で溶融するウッドメタルが使用され
ている。2. Description of the Related Art As a conventional general fuse, edited by The Institute of Metals, "Handbook of Metals" (revised December 22, 1982, No. 4)
Pb, Zn, as described in Edition 1007).
Alternatively, a Pb-Sn alloy is used. The fuse conductor made of these metals or alloys is melted by the overcurrent Joule heat to open the electric circuit. When it is desired to precisely determine the fusing current without being influenced by the outside temperature, a fuse conductor made of a tungsten wire may be used. Further, a wood metal that melts at a low temperature is used for a fuse of a type that is blown by overheating of a heating atmosphere.
【０００４】また特開平２−１０６８０７号公報には、
半導体装置や電子部品に内蔵させるヒューズ用導体とし
て、Ｐｂ−Ａｇ合金が開示されている。Further, Japanese Patent Laid-Open No. 2-106807 discloses that
A Pb-Ag alloy is disclosed as a fuse conductor incorporated in a semiconductor device or an electronic component.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上述の
ような一般的なヒューズ用導体を、半導体装置や回路部
品にヒューズ機能を付加するために使用可能な程度の細
線や極細線にまで伸線加工を施すことは困難であった。However, the general fuse conductor as described above is drawn into a fine wire or an extra fine wire that can be used to add a fuse function to a semiconductor device or a circuit component. Was difficult to apply.
【０００６】このため、ヒューズ機能を有する別の装置
を半導体装置や回路部品に組込んでいるのが現状であ
る。また、現在実用化されている半導体装置や電子部品
に内蔵させるヒューズ用導体は、いずれも大きな電流値
でなければ溶断せず、より小さな電流値で溶断するヒュ
ーズ用導体が求められている。Therefore, at present, another device having a fuse function is incorporated in a semiconductor device or a circuit component. Further, there is a demand for a fuse conductor that is currently put into practical use in a fuse incorporated in a semiconductor device or an electronic component, and does not melt if it has a large current value, but does not melt at a smaller current value.
【０００７】この発明の目的は、溶断特性に優れ、かつ
細線や極細線にまで伸線加工することができ、半導体装
置や回路部品に内蔵することのできるヒューズ用導体を
提供することにある。An object of the present invention is to provide a fuse conductor which is excellent in fusing characteristics, can be drawn into fine wires and extra fine wires, and can be incorporated in semiconductor devices and circuit parts.
【０００８】さらに、この発明の他の目的は、ヒューズ
素子のエレメントとして使用し過電流を防止したり、回
路内で直接配線することにより過電流を防止するヒュー
ズ用導体を提供することにある。Still another object of the present invention is to provide a fuse conductor which is used as an element of a fuse element to prevent an overcurrent or is directly wired in a circuit to prevent an overcurrent.
【０００９】[0009]
【課題を解決するための手段】この発明のヒューズ用導
体は、中心導体と、Ａｇ、Ａｕ、ＳｎおよびＰｂからな
るグループより選ばれる少なくとも１種の金属または該
金属の合金からなり中心導体のまわりに設けられる被覆
層とを備え、線径が０．０２〜０．１０ｍｍの範囲内で
あることを特徴としている。A fuse conductor according to the present invention comprises a center conductor and at least one metal selected from the group consisting of Ag, Au, Sn and Pb, or an alloy of the metals. And a coating diameter provided within the range of 0.02 to 0.10 mm.
【００１０】中心導体としては、伸線加工性に優れたも
のであるならば特に限定されないが、たとえば、Ｃｕ、
Ｆｅ、Ａｌまたはこれらの合金が好ましい。Ｃｕ合金の
場合、合金元素としてＳｎを適量添加すると、引張強さ
および電気抵抗値を大きくすることができる。Ｓｎの添
加量としては、０．３〜１０％が好ましい。１０％を越
えると、伸線加工性が悪くなり、極細線への加工が難し
くなる。０．３％未満であると、引張強さおよび電気抵
抗値向上の効果が少ない。The central conductor is not particularly limited as long as it has excellent wire drawing workability. For example, Cu,
Fe, Al or alloys thereof are preferred. In the case of a Cu alloy, the tensile strength and electric resistance value can be increased by adding an appropriate amount of Sn as an alloy element. The addition amount of Sn is preferably 0.3 to 10%. If it exceeds 10%, the workability of wire drawing is deteriorated, and it becomes difficult to process ultrafine wires. If it is less than 0.3%, the effect of improving the tensile strength and the electric resistance value is small.
【００１１】図１は、この発明の一実施例を示す断面図
である。図１を参照して、この発明に従うヒューズ用導
体は、中心導体１のまわりに被覆層２を設けている。被
覆層２は、たとえば電気めっき法や溶融めっき法などに
より中心導体のまわりに設けることができる。なお、こ
の発明において、被覆層は、Ａｇ、Ａｕ、ＳｎおよびＰ
ｂからなるグループより選ばれる少なくとも１種の金属
または該金属の合金からなるが、これらの金属および合
金は、不可避的不純物を含んでいてもよい。FIG. 1 is a sectional view showing an embodiment of the present invention. Referring to FIG. 1, a fuse conductor according to the present invention has a coating layer 2 provided around a central conductor 1. The coating layer 2 can be provided around the central conductor by, for example, electroplating or hot dipping. In this invention, the coating layer is made of Ag, Au, Sn and P.
It consists of at least one metal selected from the group consisting of b or an alloy of the metals, and these metals and alloys may contain inevitable impurities.
【００１２】被覆層の厚みは、０．５〜１０μｍの範囲
内であることが好ましい。被覆層の厚みが０．５μｍ未
満であれば、半田付け性の効果が十分に得られない場合
がある。また被覆層の厚みが１０μｍを越えれば、コス
ト高を伴う一方で、厚みの増加に伴う半田付け性の向上
は飽和するので、経済性の面から好ましくなくなる。The thickness of the coating layer is preferably in the range of 0.5 to 10 μm. If the thickness of the coating layer is less than 0.5 μm, the solderability effect may not be sufficiently obtained. On the other hand, if the thickness of the coating layer exceeds 10 μm, the cost is high, but the improvement in solderability due to the increase in thickness is saturated, which is not preferable in terms of economy.
【００１３】この発明のヒューズ用導体は、線径が０．
０２〜０．１０ｍｍの範囲内である。線径が０．１０ｍ
ｍを越えると溶断に必要な電流値が大きくなり、外装ケ
ースおよび基板をこがすおそれがあるので好ましくな
い。また線径が０．０２ｍｍ未満になると工業的に加工
することが困難になり、さらに加工できたとしても、
０．０２ｍｍ未満の線径を有するヒューズ用導体をコン
デンサ等の回路部品に組込む際の取扱いが困難になる。The fuse conductor of the present invention has a wire diameter of 0.
It is within the range of 02 to 0.10 mm. Wire diameter is 0.10m
If it exceeds m, the current value required for fusing becomes large and the outer case and the substrate may be scratched, which is not preferable. Further, if the wire diameter is less than 0.02 mm, it becomes difficult to industrially process, and even if further processing is possible,
It becomes difficult to handle when assembling a fuse conductor having a wire diameter of less than 0.02 mm into a circuit component such as a capacitor.
【００１４】この発明では、Ａｇ、Ａｕ、ＳｎまたはＰ
ｂの金属または合金からなる被覆層を備えているため、
半田付け性が優れている。また、線径が０．０２〜０．
１０ｍｍの範囲内であるため、溶断特性に優れており、
ヒューズ用導体として高抵抗値が要求され、かつ細線や
極細線であることを必要とする分野に有効に利用するこ
とができる。In the present invention, Ag, Au, Sn or P
Since it has a coating layer made of metal or alloy of b,
Excellent solderability. Further, the wire diameter is 0.02 to 0.
Since it is within the range of 10 mm, it has excellent fusing characteristics,
The fuse conductor can be effectively used in a field requiring a high resistance value and a fine wire or an extra fine wire.
【００１５】特に、ＩＣおよびトランジスタ等の半導体
装置やコンデンサ等の回路部品に有効に利用することが
できる。特に、回路部品に組込みを誤った場合に焼損に
いたる可能性のあるタンタルチップコンデンサに内蔵さ
せるヒューズ用導体に、この発明のヒューズ用導体を用
いると有効である。ヒューズ用エレメント、さらには基
板上の回路の一部にヒューズ機能を有したヒューズ導体
としても適している。In particular, it can be effectively used for semiconductor devices such as ICs and transistors, and circuit components such as capacitors. In particular, it is effective to use the fuse conductor of the present invention as a fuse conductor to be incorporated in a tantalum chip capacitor that may be burnt out if it is incorrectly incorporated in a circuit component. The fuse element is also suitable as a fuse conductor having a fuse function in a part of the circuit on the substrate.
【００１６】したがって、この発明のヒューズ用導体を
用いることにより、従来は半導体装置や回路部品と別に
電子機器に組込まれていたヒューズ機能を有する装置が
不要となる。Therefore, by using the fuse conductor of the present invention, a device having a fuse function, which is conventionally incorporated in an electronic device separately from a semiconductor device or a circuit component, becomes unnecessary.
【００１７】このため、この発明のヒューズ用導体を用
いれば、部品点数を低減することができ、高い信頼性の
電子機器の製造が可能となる。また、基板上の回路内に
ヒューズ機能を有した導体として使用することにより、
従来のヒューズ素子が不要になる。Therefore, if the fuse conductor of the present invention is used, it is possible to reduce the number of parts and manufacture highly reliable electronic equipment. Also, by using as a conductor with a fuse function in the circuit on the board,
The conventional fuse element becomes unnecessary.
【００１８】[0018]
実施例１ 表１に示す中心導体（線径０．７ｍｍ）を用いて、この
中心導体のまわりに表１に示すような金、銀、錫または
共晶半田組成その他からなる被覆層をめっき法により形
成した。これらの線材は、さらに所定の線径にまで加工
して、溶断特性と半田付け性を評価した。Example 1 A center conductor (wire diameter 0.7 mm) shown in Table 1 was used, and a coating layer made of gold, silver, tin or a eutectic solder composition as shown in Table 1 was plated around this center conductor. Formed by. These wire rods were further processed to a predetermined wire diameter and evaluated for fusing characteristics and solderability.
【００１９】溶断特性の評価は、１秒以内に溶断する最
低電流によって行なった。したがって、この溶断電流値
が小さいほど溶断特性が優れていることになる。なお、
この溶断特性試験において、ヒューズ用導体は所定の回
路においてヒューズ長を２ｍｍとした。The fusing characteristics were evaluated by the minimum current for fusing within 1 second. Therefore, the smaller the fusing current value, the better the fusing characteristics. In addition,
In this fusing characteristic test, the fuse conductor has a fuse length of 2 mm in a predetermined circuit.
【００２０】また、半田付け性はメニスコグラフ法での
ゼロクロスタイムで評価した。ゼロクロスタイム（ＺＣ
Ｔ）により、以下のように評価した。The solderability was evaluated by the zero cross time by the meniscograph method. Zero cross time (ZC
The evaluation was performed according to T) as follows.
【００２１】半田付け性 Ａ：ＺＣＴ＝０〜１秒，半田付け性良好 Ｂ：ＺＣＴ＝１〜１．５秒，半田付け可能 Ｃ：ＺＣＴ≧１．５秒，半田付け接続難Solderability A: ZCT = 0 to 1 second, good solderability B: ZCT = 1 to 1.5 seconds, solderable C: ZCT ≧ 1.5 seconds, difficult to connect by soldering
【００２２】[0022]
【表１】 [Table 1]
【００２３】表１から明らかなように、この発明に従う
Ｎｏ．１〜２２の合金線および金属単体線は、３０〜１
００μｍの範囲内の線径に加工することが容易であり、
１秒以内に溶断する最低電流量は０．８〜９．４Ａの範
囲内であった。また半田付け性も非常に優れていた。As is apparent from Table 1, No. 1 according to the present invention. 1 to 22 alloy wire and single metal wire are 30 to 1
It is easy to process the wire diameter within the range of 00μm,
The minimum amount of current that melts within 1 second was in the range of 0.8 to 9.4A. The solderability was also very good.
【００２４】これに対して、比較例として、線径の範囲
がこの発明の範囲を越えるヒューズ用導体をＮｏ．２３
〜２５として作製した。表１に示すように、いずれも溶
断電流値が大きく、半導体装置や回路部品内蔵用として
不適当なものであっだ。On the other hand, as a comparative example, a fuse conductor whose wire diameter range exceeds the range of the present invention is No. 23
Was prepared as ~ 25. As shown in Table 1, all of them have large fusing current values, which are unsuitable for embedding in semiconductor devices and circuit parts.
【００２５】また、比較として、被覆層を設けないヒュ
ーズ用導体をＮｏ．２６として作製し、溶断電流および
半田付け性を評価したところ、半田付け性が非常に悪か
った。For comparison, fuse conductors having no coating layer were tested as No. No. 26, the fusing current and the solderability were evaluated, and the solderability was extremely poor.
【００２６】実施例２ 表１に示すＮｏ．４と同様に、ＡｇめっきしたＣｕ−
０．３％Ｓｎ合金を線径３０μｍまで伸線し、これをコ
ンデンサに内蔵するヒューズ用導体として用いた。この
ヒューズ用導体の特性は、引張強さが６０ｋｇ／ｍｍ2
であり、溶断電流（１秒以内に溶断するのに必要な最低
電流）が１．８Ａであった。Example 2 No. 1 shown in Table 1 As in No. 4, Ag-plated Cu-
A 0.3% Sn alloy was drawn to a wire diameter of 30 μm, and this was used as a fuse conductor incorporated in a capacitor. The characteristic of this fuse conductor is that the tensile strength is 60 kg / mm 2
And the fusing current (minimum current required for fusing within 1 second) was 1.8A.
【００２７】図２は、このヒューズ用導体を内蔵したコ
ンデンサを示す断面図である。図２を参照して、誘電体
１１の両側には、電極１２および１３がそれぞれ設けら
れている。電極１２にはリード線１４が接続されてお
り、電極１３には半田１７によりヒューズ用導体１６の
一端が接続されており、ヒューズ用導体１６の他端は半
田１８によりリード線１５に接続されている。このコン
デンサは、樹脂１９により封止されている。FIG. 2 is a sectional view showing a capacitor incorporating the fuse conductor. Referring to FIG. 2, electrodes 12 and 13 are provided on both sides of dielectric 11, respectively. A lead wire 14 is connected to the electrode 12, one end of a fuse conductor 16 is connected to the electrode 13 by solder 17, and the other end of the fuse conductor 16 is connected to a lead wire 15 by solder 18. There is. This capacitor is sealed with resin 19.
【００２８】このようなヒューズ用導体を内蔵したコン
デンサに、定格電流の５倍の電流を流したところ、ヒュ
ーズ用導体のみが断線し、コンデンサを含む他の電気回
路は損傷を受けなかった。When a current 5 times as high as the rated current was passed through a capacitor containing such a fuse conductor, only the fuse conductor was broken, and other electric circuits including the capacitor were not damaged.
【００２９】このことから明らかなように、この発明に
従うヒューズ用導体は、コンデンサに内蔵するヒューズ
用導体として適したものである。As is apparent from this, the fuse conductor according to the present invention is suitable as a fuse conductor incorporated in a capacitor.
【００３０】実施例３ 表１に示すＮｏ．１５の組成と同一のヒューズ用導体
（線径３０μｍ）を用いて、チップ型ヒューズを作製し
た。ヒューズの両端の接続は抵抗溶接法によりリードフ
レームに接続した。このチップ型ヒューズに定格電流の
３倍の電流を流したところ、ヒューズが１秒以内に溶断
した。Example 3 No. 1 shown in Table 1 A chip-type fuse was manufactured using the same fuse conductor (wire diameter 30 μm) as that of composition No. 15. Both ends of the fuse were connected to the lead frame by resistance welding. When a current three times the rated current was applied to this chip type fuse, the fuse was blown out within 1 second.
【００３１】実施例４ 表１に示すＮｏ．１５の組成と同一のヒューズワイヤ
（線径６０μｍ）をトランスの入力側のリードの一部に
長さ２５ｍｍで配線し、回路を形成した。これに電流
（１．５Ａ）を流したところ、１秒以内にヒューズが溶
断し、トランスの焼損を防止した。Example 4 No. 1 shown in Table 1 A fuse wire (wire diameter 60 μm) having the same composition as No. 15 was wired to a part of the lead on the input side of the transformer with a length of 25 mm to form a circuit. When a current (1.5 A) was applied to this, the fuse melted within 1 second to prevent the transformer from burning.
【００３２】従来は管ヒューズおよびホルダ等でヒュー
ズ回路を構成していたが、この発明に従うヒューズワイ
ヤを用いることにより、ヒューズ部分の構成がより簡易
になり、コンパクトな機器構成とすることができる。In the past, a fuse circuit was composed of a tube fuse and a holder, but by using the fuse wire according to the present invention, the structure of the fuse portion becomes simpler and a compact device structure can be obtained.
【図１】この発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
【図２】この発明に従う実施例のヒューズ用導体を内蔵
したコンデンサを示す断面図である。FIG. 2 is a cross-sectional view showing a capacitor incorporating a fuse conductor according to an embodiment of the present invention.
１ 中心導体 ２ 被覆層 １１ 誘電体 １２，１３ 電極 １４，１５ リード線 １６ ヒューズ用導体 １７，１８ 半田 １９ 樹脂 1 Central Conductor 2 Covering Layer 11 Dielectric 12,13 Electrode 14,15 Lead Wire 16 Fuse Conductor 17,18 Solder 19 Resin
Claims (6)
ｂからなるグループらより選ばれる少なくとも１種の金
属または該金属の合金からなり前記中心導体のまわりに
設けられる被覆層とを備え、線径が０．０２〜０．１０
ｍｍの範囲である、ヒューズ用導体。1. A central conductor and Ag, Au, Sn and P
a coating layer made of at least one metal selected from the group consisting of b or an alloy of the metals and provided around the central conductor, and having a wire diameter of 0.02 to 0.10.
A conductor for fuses in the range of mm.
はこれらの合金からなる、請求項１に記載のヒューズ用
導体。2. The fuse conductor according to claim 1, wherein the center conductor is made of Cu, Fe, Al, or an alloy thereof.
蔵されるヒューズ用導体を含む、請求項１に記載のヒュ
ーズ用導体。3. The fuse conductor according to claim 1, wherein the fuse conductor includes a fuse conductor built in a capacitor.
蔵されるヒューズ用導体を含む、請求項１に記載のヒュ
ーズ用導体。4. The fuse conductor according to claim 1, wherein the fuse conductor includes a fuse conductor incorporated in a semiconductor device.
内蔵されるヒューズ用導体を含む、請求項１に記載のヒ
ューズ用導体。5. The fuse conductor according to claim 1, wherein the fuse conductor includes a fuse conductor incorporated in a fuse element.
一部にヒューズ機能を有したヒューズ用導体を含む、請
求項１に記載のヒューズ用導体。6. The fuse conductor according to claim 1, wherein the fuse conductor includes a fuse conductor having a fuse function in a part of a circuit on a substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24798591A JPH0547294A (en) | 1990-10-18 | 1991-09-26 | Conductor for fuse |
| DE69116976T DE69116976T2 (en) | 1990-10-18 | 1991-10-17 | Fuse element |
| EP91117759A EP0481493B1 (en) | 1990-10-18 | 1991-10-17 | Fuse Conductor |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28103490 | 1990-10-18 | ||
| JP2-281034 | 1990-10-18 | ||
| JP2-315500 | 1990-10-18 | ||
| JP31550090 | 1990-11-19 | ||
| JP24798591A JPH0547294A (en) | 1990-10-18 | 1991-09-26 | Conductor for fuse |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0547294A true JPH0547294A (en) | 1993-02-26 |
Family
ID=27333654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24798591A Pending JPH0547294A (en) | 1990-10-18 | 1991-09-26 | Conductor for fuse |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0547294A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001524735A (en) * | 1997-11-25 | 2001-12-04 | インフィネオン テクノロジース アクチエンゲゼルシャフト | Semiconductor structural element having defined properties in the event of a failure and a method for producing such a semiconductor structural element |
| GB2375880A (en) * | 2001-03-19 | 2002-11-27 | Astrium Gmbh | A conductor for a cryogenic device |
| US6774761B2 (en) * | 2002-03-06 | 2004-08-10 | Uchihashi Estec Co., Ltd. | Alloy type thermal fuse and fuse element thereof |
| JP2013239405A (en) * | 2012-05-17 | 2013-11-28 | Nec Schott Components Corp | Fuse element for protective element and circuit protection element utilizing the same |
| WO2015072122A1 (en) * | 2013-11-15 | 2015-05-21 | デクセリアルズ株式会社 | Method for producing fusible conductor |
| CN111883400A (en) * | 2020-08-25 | 2020-11-03 | 郑州机械研究所有限公司 | Silver-copper composite wire for fuse and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53115053A (en) * | 1976-10-11 | 1978-10-07 | Wickmann Werke Ag | Safety device for low speed fuse |
| JPS5559456U (en) * | 1978-10-19 | 1980-04-22 | ||
| JPS645415B2 (en) * | 1980-03-19 | 1989-01-30 | Kawasoo Tekuseru Kk |
-
1991
- 1991-09-26 JP JP24798591A patent/JPH0547294A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53115053A (en) * | 1976-10-11 | 1978-10-07 | Wickmann Werke Ag | Safety device for low speed fuse |
| JPS5559456U (en) * | 1978-10-19 | 1980-04-22 | ||
| JPS645415B2 (en) * | 1980-03-19 | 1989-01-30 | Kawasoo Tekuseru Kk |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001524735A (en) * | 1997-11-25 | 2001-12-04 | インフィネオン テクノロジース アクチエンゲゼルシャフト | Semiconductor structural element having defined properties in the event of a failure and a method for producing such a semiconductor structural element |
| GB2375880A (en) * | 2001-03-19 | 2002-11-27 | Astrium Gmbh | A conductor for a cryogenic device |
| US6774761B2 (en) * | 2002-03-06 | 2004-08-10 | Uchihashi Estec Co., Ltd. | Alloy type thermal fuse and fuse element thereof |
| JP2013239405A (en) * | 2012-05-17 | 2013-11-28 | Nec Schott Components Corp | Fuse element for protective element and circuit protection element utilizing the same |
| WO2015072122A1 (en) * | 2013-11-15 | 2015-05-21 | デクセリアルズ株式会社 | Method for producing fusible conductor |
| CN111883400A (en) * | 2020-08-25 | 2020-11-03 | 郑州机械研究所有限公司 | Silver-copper composite wire for fuse and preparation method thereof |
| CN111883400B (en) * | 2020-08-25 | 2022-04-26 | 郑州机械研究所有限公司 | Silver-copper composite wire for fuse and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100309229B1 (en) | Lead-free solder and soldered article | |
| US20080070059A1 (en) | Lead-free solder and soldered article | |
| JP3684811B2 (en) | Solder and soldered articles | |
| JPS60245753A (en) | High strength copper alloy having high electric conductivity | |
| JP4240356B2 (en) | Pb-free solder composition and soldered article | |
| JP6349615B1 (en) | Solder alloy, solder joint material and electronic circuit board | |
| JP2001334384A (en) | Solder composition and soldered article | |
| JPH0547294A (en) | Conductor for fuse | |
| DE60107670D1 (en) | LEAD-FREE SOLDERING ALLOY AND THEIR USE IN ELECTRONIC COMPONENTS | |
| EP0481493B1 (en) | Fuse Conductor | |
| US5019457A (en) | Conductor used as a fuse | |
| JP2819408B2 (en) | Alloy type temperature fuse | |
| JP3782743B2 (en) | Solder composition, soldering method and electronic component | |
| JP2529255B2 (en) | Fuse conductor | |
| US4747889A (en) | Interconnecting wire for semiconductor devices | |
| JPS63266034A (en) | Conductor for fuse | |
| JPH056729A (en) | Fuse conductor | |
| JP2678215B2 (en) | Fuse conductor | |
| JPH0412623B2 (en) | ||
| JP2001028228A (en) | Current fuse element | |
| JPH02106807A (en) | Conductor for fuse | |
| JP3700668B2 (en) | Solder and soldered articles | |
| JPS58142505A (en) | Overload fusion resistor | |
| JPH0819892A (en) | Lead free soldering alloy | |
| JP6427752B1 (en) | Solder alloy, solder joint material and electronic circuit board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20020618 |