JPS56118344A - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JPS56118344A
JPS56118344A JP2182580A JP2182580A JPS56118344A JP S56118344 A JPS56118344 A JP S56118344A JP 2182580 A JP2182580 A JP 2182580A JP 2182580 A JP2182580 A JP 2182580A JP S56118344 A JPS56118344 A JP S56118344A
Authority
JP
Japan
Prior art keywords
wires
diameter
stainless steel
plating
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2182580A
Other languages
Japanese (ja)
Inventor
Tamio Saito
Masami Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2182580A priority Critical patent/JPS56118344A/en
Publication of JPS56118344A publication Critical patent/JPS56118344A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/4516—Iron (Fe) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45184—Tungsten (W) as principal constituent
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
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    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns

Abstract

PURPOSE:To lower costs, by applying Au plating to fine metal wires with high tension. CONSTITUTION:The surface of stainless steel wire is preliminerily treated so that unmoveable films are chemically removed. Then an Au plating is applied thereto with a thickness of 1-2mu. Stainless steel wires with a diameter more than 10mu are easily available from industry. The stainless wires with a diameter of 10mu have a tensile strength of 4.4g, which is about 4.4 times of a gold wire with a diameter of 30mu and about 8 times of an Al wire with a diameter of 30mu. Practically, wires with diameter of 5-20M can safely be used with respect to tensile strength. This means a thinner plating of Au, resulting in the lowering of costs. Though the stainless steel is hard to crush in comparison with gold, preliminerily flattened wires are easily obtained enabling the bonding normally. As the stainless steel wires are hard to be cut by the hydrogen torch, cutters are to be used for that purpose. Stainless steel in this case can be replaced by W wires.
JP2182580A 1980-02-23 1980-02-23 Bonding wire Pending JPS56118344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2182580A JPS56118344A (en) 1980-02-23 1980-02-23 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2182580A JPS56118344A (en) 1980-02-23 1980-02-23 Bonding wire

Publications (1)

Publication Number Publication Date
JPS56118344A true JPS56118344A (en) 1981-09-17

Family

ID=12065831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2182580A Pending JPS56118344A (en) 1980-02-23 1980-02-23 Bonding wire

Country Status (1)

Country Link
JP (1) JPS56118344A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62287633A (en) * 1986-06-06 1987-12-14 Sumitomo Electric Ind Ltd Bonding wire for connection of semiconductor element and manufacture thereof
FR2822288A1 (en) * 2001-03-19 2002-09-20 Astrium Gmbh Cryogenic installation metallic superconductor having central conductor width between 1 and 0.01 mm and precious metal/precious metal alloy width between 1 micron and 1 nm
KR100424169B1 (en) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 method for improving mechanical strength of gold wire
JP2012019177A (en) * 2010-07-09 2012-01-26 Nisshin Steel Co Ltd WIRE BONDING STRUCTURE USING Al PLATED STEEL WIRE

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62287633A (en) * 1986-06-06 1987-12-14 Sumitomo Electric Ind Ltd Bonding wire for connection of semiconductor element and manufacture thereof
FR2822288A1 (en) * 2001-03-19 2002-09-20 Astrium Gmbh Cryogenic installation metallic superconductor having central conductor width between 1 and 0.01 mm and precious metal/precious metal alloy width between 1 micron and 1 nm
DE10113492A1 (en) * 2001-03-19 2002-10-02 Astrium Gmbh Metallic conductor and cryogenic device
DE10113492B4 (en) * 2001-03-19 2005-12-01 Eads Astrium Gmbh Electrically conductive wire for applications in low temperature ranges
KR100424169B1 (en) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 method for improving mechanical strength of gold wire
JP2012019177A (en) * 2010-07-09 2012-01-26 Nisshin Steel Co Ltd WIRE BONDING STRUCTURE USING Al PLATED STEEL WIRE

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