KR100424169B1 - method for improving mechanical strength of gold wire - Google Patents
method for improving mechanical strength of gold wire Download PDFInfo
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- KR100424169B1 KR100424169B1 KR10-2001-0037747A KR20010037747A KR100424169B1 KR 100424169 B1 KR100424169 B1 KR 100424169B1 KR 20010037747 A KR20010037747 A KR 20010037747A KR 100424169 B1 KR100424169 B1 KR 100424169B1
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- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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Abstract
본 발명은 반도체소자의 칩패드(chip pad)와 리드프레임(leadframe)을 전기적으로 연결시키는 역할을 하는 골드와이어(gold wire)의 인장강도를 향상시킬 수 있는 방법에 관해 개시한다.The present invention discloses a method for improving the tensile strength of a gold wire, which serves to electrically connect a chip pad and a leadframe of a semiconductor device.
칩패드와 리드프레임 간의 전기적인 연결을 제공하는 골드와이어의 강도를 향상시키는 방법에 있어서, 개시된 본 발명은 골드와이어에 1차로 무전해 금도금처리를 실시하여 표면거칠기를 증가시키는 공정과, 표면거칠기가 증가된 골드와이어에 2차로 무전해 도금처리를 실시하여 도금층을 피복하는 공정을 포함한다.In a method for improving the strength of a gold wire providing an electrical connection between a chip pad and a lead frame, the present invention discloses a process of increasing the surface roughness by first performing electroless gold plating on the gold wire. And applying a second electroless plating treatment to the increased gold wire to coat the plating layer.
Description
본 발명은 본딩와이어(bonding wire)의 강도를 향상시키는 방법에 관한 것으로, 보다 상세하게는 반도체소자의 칩패드(chip pad)와 리드프레임(leadframe)을 전기적으로 연결시키는 골드와이어(gold wire)의 강도를 향상시킬 수 있는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of improving the strength of a bonding wire, and more particularly, to a gold wire electrically connecting a chip pad and a leadframe of a semiconductor device. It is about the method which can improve strength.
칩사이즈(chip size)의 반도체 패키지(package)의 제조공정에 대해 간략하게 알아보면, 먼저 회로패턴(circuit pattern) 형성이 완료된 웨이퍼(wafer)를 칩단위로 쏘잉시키고, 상기 쏘잉된 각각의 반도체 칩을 패키지 제조용 반도체 제조장비내로 이송시키어 표면에 자연적으로 생성되는 자연산화막을 제거한다.A brief description will be made of a manufacturing process of a semiconductor package of chip size. First, a wafer on which a circuit pattern is formed is sawed on a chip basis, and each of the sawed semiconductor chips is formed. Is transferred into the semiconductor manufacturing equipment for package manufacture to remove the natural oxide film naturally generated on the surface.
이어서, 본딩와이어(bonding wire)을 이용하여 반도체 칩의 칩패드와 리드프레임 간을 전기적으로 연결시키는 와이어 본딩공정을 실시한 다음, 상기 본딩와이어의 표면에 다른 금속의 얇은 층을 부착시키는 도금(plating) 처리공정이 진행된다. 이후, 몰딩 및 트림/폼 등의 공정을 거쳐서 반도체 패키지 제조를 완성한다.Subsequently, a wire bonding process of electrically connecting the chip pad and the lead frame of the semiconductor chip using a bonding wire is performed, and then a plating is performed to attach a thin layer of another metal to the surface of the bonding wire. The treatment process proceeds. Thereafter, the semiconductor package is manufactured through molding, trimming, and foaming.
통상적으로, 상기 반도체 칩의 칩패드와 리드프레임 간을 연결시키는 본딩와이어로는 전기전도도 및 성형성이 우수한 재료인 골드(gold:Au)를 사용하여 왔다.In general, gold (Au), a material having excellent electrical conductivity and formability, has been used as a bonding wire connecting the chip pad and the lead frame of the semiconductor chip.
상기 골드 재료는 누른빛의 광택이 나는 귀금속의 하나로, 전기전도도 및 성형성이 우수하나, 70GPa의 낮은 인장강도를 가진 금속이다.The gold material is one of noble gloss precious metals, and has excellent electrical conductivity and formability, but has a low tensile strength of 70 GPa.
그러나, 종래의 방법에서는 골드와이어가 70 GPa의 낮은 인장강도를 가짐에 따라, 본딩 작업 시 외부의 열 및 기계적 충격에 의해 쉽게 파괴되어 칩패드와 리드프레임 간의 전기적 단선이 발생될 우려가 있었다.However, in the conventional method, as the gold wire has a low tensile strength of 70 GPa, there is a fear that electrical breakage between the chip pad and the lead frame may occur due to external heat and mechanical shock during bonding.
또한, 종래에는 본딩와이어의 표면거칠기가, 도 1에 도시된 바와 같이, 매우 작기때문에 이후의 도금처리하는 과정에서 도금막과의 접착력이 좋지 않아 접착불량을 유발하는 문제점이 있었다.In addition, in the related art, since the surface roughness of the bonding wire is very small, as shown in FIG. 1, there is a problem in that adhesion with the plating film is not good in the subsequent plating process, thereby causing poor adhesion.
이에 본 발명은 상기 종래의 문제점을 해결하기 위해 안출된 것으로, 골드와이어와 도금막 간의 접촉면적을 증가시키고 골드와이어의 강도를 향상시키는 방법을 제공함에 그 목적이 있다.Accordingly, the present invention has been made to solve the above problems, and an object thereof is to provide a method of increasing the contact area between the gold wire and the plated film and improving the strength of the gold wire.
도 1은 종래 기술에 따른 골드와이어의 표면거칠기를 보인 도면.1 is a view showing the surface roughness of the gold wire according to the prior art.
도 2는 본 발명에 따른 골드와이어의 인장강도를 향상시키는 과정을 보인 공정흐름도.Figure 2 is a process flow diagram showing a process of improving the tensile strength of the gold wire according to the present invention.
도 3은 본 발명에 의해 골드와이어의 인장강도가 향상된 것을 보인 그래프.Figure 3 is a graph showing that the tensile strength of the gold wire improved by the present invention.
도 4는 본 발명에 따른 골드와이어의 표면거칠기를 보인 도면.Figure 4 is a view showing the surface roughness of the gold wire according to the present invention.
상기 목적을 달성하기 위해, 칩패드와 리드프레임 간의 전기적인 연결을 제공하는 골드와이어의 강도를 향상시키는 방법에 있어서, 본 발명은 골드와이어에 1차로 무전해 금도금처리를 실시하여 표면거칠기를 증가시키는 공정과, 표면거칠기가 증가된 골드와이어에 2차로 무전해 도금처리를 실시하여 도금층을 피복하는 공정을 포함한 것을 특징으로 한다.In order to achieve the above object, in the method of improving the strength of the gold wire to provide an electrical connection between the chip pad and the lead frame, the present invention is subjected to the first electroless gold plating treatment on the gold wire to increase the surface roughness And a step of coating the plating layer by performing a second electroless plating treatment on the gold wire having an increased surface roughness.
상기 1차 무전해 금도금처리 공정은 BH4 -이온을 함유한 도금용액을 이용하며, 도금층으로는 NiP층을 이용한다.The first electroless gold plating process uses a plating solution containing BH 4 − ions, and a NiP layer is used as the plating layer.
이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 따른 골드와이어의 인장강도를 향상시키는 과정을 보인 공정흐름도이고, 도 4는 본 발명에 따른 골드와이어의 표면거칠기를 보인 도면이다.2 is a process flow chart showing a process of improving the tensile strength of the gold wire according to the present invention, Figure 4 is a view showing the surface roughness of the gold wire according to the present invention.
본 발명에 따른 골드와이어의 강도를 향상시키는 방법은, 도 2에 도시된 바와 같이, 먼저 골드와이어에 BH4 -이온을 함유한 도금용액을 이용하여 1차로 무전해 도금처리를 실시한다.In the method for improving the strength of the gold wire according to the present invention, as shown in FIG. 2, first, electroless plating is first performed using a plating solution containing BH 4 − ions in the gold wire.
상기 1차 무전해 도금처리 공정은, 전기를 사용하지 않는 도금처리로, 하기의 (Ⅰ) 및 (Ⅱ)식에 도시된 바와 같이, 화학반응을 이용한 것으로, 도금용액 내의 BH4 -이온이 산화반응을 일으키어 BH3OH-이온 수소가스(H2)를 발생시키고, 다시 상기BH3OH-이온이 산화반응을 일으키어 수소가스(H2)를 발생시키게 된다.The first electroless plating process is a plating process that does not use electricity. As shown in the following formulas (I) and (II), chemical reactions are used, and BH 4 − ions in the plating solution are oxidized. The reaction causes BH 3 OH - ion hydrogen gas (H 2 ), and the BH 3 OH - ion causes an oxidation reaction to generate hydrogen gas (H 2 ).
BH4 -+ H2O →BH3OH-+ H2(g)↑ ---------- (Ⅰ) BH 4 - + H 2 O → BH 3 OH - + H 2 (g) ↑ ---------- (Ⅰ)
BH3OH-+ H2O→BO2 -+ 3H2(g)↑ ---------- (Ⅱ) BH 3 OH - + H 2 O → BO 2 - + 3H 2 (g) ↑ ---------- (Ⅱ)
상기 산화반응이 일어나면서 발생되는 수소가스로 인해 골드와이어는, 도 4에 도시된 바와 같이, 표면이 상당히 거칠게 되며, 이에 따라 이 후에 형성되는 도금층과의 접촉면적이 증가된다.Due to the hydrogen gas generated by the oxidation reaction, the gold wire has a very rough surface, as shown in FIG. 4, thereby increasing the contact area with the plating layer formed thereafter.
이어서, 상기 표면거칠기가 증가된 골드와이어에 2차로 무전해 도금처리를 실시하여 도금층을 피복시킨다.Subsequently, a second electroless plating treatment is performed on the gold wire having the increased surface roughness to coat the plating layer.
이때, 도금층은 골드와이어의 인장강도가 낮은 점을 해소하고자 피복된 것으로, 약 200GPa 의 인장강도를 가진 NiP층을 이용한다.At this time, the plating layer is coated to eliminate the low tensile strength of the gold wire, and uses a NiP layer having a tensile strength of about 200 GPa.
상기 1차 도금처리 결과, 골드와이어의 증가된 표면적은 2차 무전해 도금처리 진행 시, 환원제가 다량 흡착되는 활성화된 사이트(site)로 작용하게 된다. 따라서, Ni이온과 P이온의 환원이 가속화되고 무전해 NiP 층 내의 P양이 증가하게 되어 인장강도를 향상시킬 수 있다.As a result of the primary plating process, the increased surface area of the gold wire serves as an activated site to which a large amount of reducing agent is adsorbed during the second electroless plating process. Therefore, the reduction of Ni ions and P ions is accelerated, and the amount of P in the electroless NiP layer is increased, thereby improving tensile strength.
이때, 상기 NiP층은 도금층 내 Ni3P 석출로 인한 석출강화 효과로 도금층 자체의 인장강도 및 경도가 높고, 전류를 인가하지 않음으로써 균일한 도금층을 얻을 수 있다.At this time, the NiP layer has a high tensile strength and hardness of the plating layer itself due to the precipitation strengthening effect due to the precipitation of Ni 3 P in the plating layer, thereby obtaining a uniform plating layer by not applying a current.
또한, 상기 NiP층 내의 P양을 증가 또는 감소시킴으로써 도금층의 자체 강도를 조절할 수 있다.Further, by increasing or decreasing the amount of P in the NiP layer, it is possible to adjust the strength of the plating layer.
도 3은 종래의 순수 골드와이어와 본 발명에 의해 1차, 2차 도금처리된 골드와이어의 인장강도를 비교한 그래프이다.Figure 3 is a graph comparing the tensile strength of the conventional pure gold wire and the primary and secondary plating gold wire by the present invention.
상기 도 3에서 가로축은 초기상태에서 골드와이어의 늘어난 길이(displacement)를 표시한 것이고, 세로축은 외부에서 인가한 인력(applied load, 즉, 당기는 힘)을 표시한 것이다.In FIG. 3, the horizontal axis represents an extended length of the gold wire in the initial state, and the vertical axis represents an applied load (ie, pulling force) applied from the outside.
또한, (a)는 종래의 순수한 골드와이어를 표시한 것이고, (b)는 1차 무전해 도금처리를 생략하고 2차 도금처리를 진행시킨 골드와이어를 표시한 것이며, (c)는 본 발명의 1차 및 2차 도금처리를 진행시킨 골드와이어를 표시한 것이다.In addition, (a) shows the conventional pure gold wire, (b) shows the gold wire which advanced the secondary plating process without the 1st electroless plating process, (c) shows the invention of this invention. The gold wire which progressed the 1st and 2nd plating process is shown.
상기 상술한 방법에 의해 1차 및 2차 도금처리된 본 발명에 따른 골드와이어는, 도 3에 도시된 바와 같이, 종래 기술에 따른 순수한 골드와이어보다도 인장강도가 훨씬 크게 나타나는 것을 알 수 있다.As shown in FIG. 3, the gold wires of the present invention subjected to the primary and secondary plating treatment by the above-described method can be seen that the tensile strength is much larger than that of the pure gold wires according to the prior art.
또한, 본 발명에서 1차 도금처리과정을 생략하고 2차 도금처리만 진행된 골드와이어(b)는 종래의 골드와이어(a)와 본 발명의 골드와이어(c)의 중간 정도의 인장강도를 가지고 있음을 알 수 있다.In addition, the gold wire (b), which is omitted from the first plating process and only the second plating process in the present invention, has a tensile strength of about half of the conventional gold wire (a) and the gold wire (c) of the present invention. It can be seen.
<표1>
상기 < 표 1> 에서도 알 수 있듯이, 종래의 순수 골드와이어의 탄성계수가70GPa 인 반면, 본 발명의 1차 및 2차 도금처리가 진행된 골드와이어의 탄성계수는 131GPa로 증가한 것을 알 수 있다.As can be seen from Table 1, the elastic modulus of the conventional pure gold wire is 70 GPa, whereas the elastic modulus of the gold wire subjected to the primary and secondary plating treatment of the present invention is increased to 131 GPa.
또한, 2차 도금처리만 진행된 골드와이어의 탄성계수도 102 GPa 임을 알수 있다.In addition, it can be seen that the elastic modulus of the gold wire subjected to the secondary plating treatment is 102 GPa.
상술한 바와 같이, 본 발명은 골드와이어에 1차 도금처리를 실시하여 표면거칠기를 증가시킨 후에, 상기 표면거칠기가 증가된 골드와이어에 다시 2차 도금처리를 실시하여 인장강도가 200GPa인 NiP층을 피복시킨 것이다.As described above, the present invention is subjected to the primary plating treatment on the gold wire to increase the surface roughness, and then subjected to the second plating treatment on the gold wire having the increased surface roughness again to form a NiP layer having a tensile strength of 200 GPa. It is coated.
따라서, 상기 1차 도금처리에 의해 표면거칠기가 증가된 골드와이어에 NiP층을 피복시키어 골드와이어와 NiP층 간의 접촉면적이 커져서 보다 안정적으로 부착되며, 또한, 골드와이어의 인장강도를 향상시킨다.Therefore, by coating the NiP layer on the gold wire having the increased surface roughness by the primary plating treatment, the contact area between the gold wire and the NiP layer is increased, thereby more stably attaching, and also improving the tensile strength of the gold wire.
이상에서와 같이, 본 발명의 방법은 1차 도금처리에 의해 골드와이어의 표면거칠기를 증가시킨 후에, 표면거칠기가 증가된 골드와이어에 다시 2차 도금처리에 의해 강도가 큰 도금층을 피복시킴으로써, 골드와이어와 도금층 간의 접촉면적이 커짐에 따라 골드와이어에 도금층의 부착이 용이하고, 인장강도가 향상된다.As described above, the method of the present invention increases the surface roughness of the gold wire by the primary plating treatment, and then coats the plating layer of high strength by the secondary plating treatment again on the gold wire having the increased surface roughness. As the contact area between the wire and the plating layer is increased, the plating layer is easily attached to the gold wire, and the tensile strength is improved.
본 발명의 방법에서는 상기 도금층으로 200MPa의 강도를 가진 NiP층을 이용함으로써, 골드와이어의 강도가 향상되고, 또한 NiP층의 성분을 조절하여 도금층 자체의 강도를 조절할 수 있다.In the method of the present invention, by using a NiP layer having a strength of 200 MPa as the plating layer, the strength of the gold wire is improved, and the strength of the plating layer itself can be adjusted by adjusting the components of the NiP layer.
기타, 본 발명은 그 요지를 일탈하지 않는 범위에서 다양하게 변경하여 실시할 수 있다.In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2001-0037747A KR100424169B1 (en) | 2001-06-28 | 2001-06-28 | method for improving mechanical strength of gold wire |
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| Application Number | Priority Date | Filing Date | Title |
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| KR10-2001-0037747A KR100424169B1 (en) | 2001-06-28 | 2001-06-28 | method for improving mechanical strength of gold wire |
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| KR100424169B1 true KR100424169B1 (en) | 2004-03-24 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56118344A (en) * | 1980-02-23 | 1981-09-17 | Toshiba Corp | Bonding wire |
| JPS6356924A (en) * | 1986-08-27 | 1988-03-11 | Mitsubishi Electric Corp | Small-gage metal wire for wire bonding |
| JPS6455834A (en) * | 1987-08-26 | 1989-03-02 | Kobe Steel Ltd | Manufacture of composite bonding wire |
| JPH05211194A (en) * | 1991-07-17 | 1993-08-20 | Lsi Logic Corp | Coaxial bonding wire for semiconductor connection use |
| JPH06120286A (en) * | 1992-10-02 | 1994-04-28 | Matsushita Electron Corp | Semiconductor device |
| JPH0766236A (en) * | 1993-08-31 | 1995-03-10 | Tanaka Denshi Kogyo Kk | Multilayer-coated bonding wire for semiconductor element and semiconductor device |
-
2001
- 2001-06-28 KR KR10-2001-0037747A patent/KR100424169B1/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56118344A (en) * | 1980-02-23 | 1981-09-17 | Toshiba Corp | Bonding wire |
| JPS6356924A (en) * | 1986-08-27 | 1988-03-11 | Mitsubishi Electric Corp | Small-gage metal wire for wire bonding |
| JPS6455834A (en) * | 1987-08-26 | 1989-03-02 | Kobe Steel Ltd | Manufacture of composite bonding wire |
| JPH05211194A (en) * | 1991-07-17 | 1993-08-20 | Lsi Logic Corp | Coaxial bonding wire for semiconductor connection use |
| JPH06120286A (en) * | 1992-10-02 | 1994-04-28 | Matsushita Electron Corp | Semiconductor device |
| JPH0766236A (en) * | 1993-08-31 | 1995-03-10 | Tanaka Denshi Kogyo Kk | Multilayer-coated bonding wire for semiconductor element and semiconductor device |
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| KR20030001887A (en) | 2003-01-08 |
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