JPH11243111A - Gold-plated bonding wire and manufacture thereof - Google Patents
Gold-plated bonding wire and manufacture thereofInfo
- Publication number
- JPH11243111A JPH11243111A JP4396198A JP4396198A JPH11243111A JP H11243111 A JPH11243111 A JP H11243111A JP 4396198 A JP4396198 A JP 4396198A JP 4396198 A JP4396198 A JP 4396198A JP H11243111 A JPH11243111 A JP H11243111A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- wire
- bonding
- coating film
- gold coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置の組立
に用いられるボンディングワイヤに関するものである。The present invention relates to a bonding wire used for assembling a semiconductor device.
【０００２】[0002]
【従来の技術】従来より、半導体チップとリードフレー
ムとの接続のために、ワイヤボンディングが用いられて
いる。このボンディング用ワイヤとしては、一般的に
は、長期間放置してもさびにくく、また加熱しても安定
であるという理由から純金のワイヤが用いられている。2. Description of the Related Art Conventionally, wire bonding has been used for connection between a semiconductor chip and a lead frame. As this bonding wire, a pure gold wire is generally used because it is resistant to rust even when left for a long period of time and is stable even when heated.
【０００３】しかしながら、純金のワイヤは高価である
ため、銅合金ワイヤ、アルミニウムワイヤ等が実用化さ
れているが、これらは純金ワイヤと比較すると、表面が
酸化しやすい、熱圧着ボンディング時のボール形状が不
安定である、ボンディングツールの先端がつまりやすい
等の欠点がある。また、特公昭５４−２３７９４号公報
には、銀線の表面を金で被覆したボンディングワイヤが
開示されている。このワイヤは、使用する金の量が純金
ワイヤよりも格段に少なくてすみ、しかも表面が金で覆
われているため酸化しにくいという利点がある。[0003] However, since pure gold wires are expensive, copper alloy wires, aluminum wires, and the like have been put into practical use, but these are more susceptible to oxidation than pure gold wires, and have a ball shape during thermocompression bonding. Are unstable and the tip of the bonding tool is easily clogged. Japanese Patent Publication No. 54-23794 discloses a bonding wire in which the surface of a silver wire is covered with gold. This wire has the advantage that the amount of gold used is much smaller than that of a pure gold wire, and since the surface is covered with gold, it is difficult to oxidize.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、特公昭
５４−２３７９４号公報の銀線の表面を金で被覆したボ
ンディングワイヤを用いて、実際にボンディングを行っ
た場合、ボンディング部の付け根部分において、金被覆
にひび割れや剥離が生じることがあった。このように金
被覆にひび割れや剥離が生じると、その部分から下地の
銀線が外気にふれるため、ボンディングの付け根部分で
ワイヤに酸化が生じてしまうという問題が生じる。However, when bonding is actually performed using a bonding wire in which the surface of a silver wire is coated with gold disclosed in Japanese Patent Publication No. 54-23794, the gold at the base of the bonding portion is reduced. Cracking and peeling sometimes occurred in the coating. When the gold coating is cracked or peeled in this way, the underlying silver wire is exposed to the outside air from the cracked portion and the wire is oxidized at the root of the bonding.
【０００５】本発明は、銀線の表面を金で被覆したボン
ディングワイヤであって、ボンディング部の付け根部分
での金被覆に、ひび割れや剥離の生じない耐食性の優れ
たボンディングワイヤを提供することを目的とする。An object of the present invention is to provide a bonding wire in which the surface of a silver wire is coated with gold, and the gold coating at the base of the bonding portion has excellent corrosion resistance without cracking or peeling. Aim.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明によれば、銀線と前記銀線を被覆する金めっ
き膜とを有し、前記金めっき膜は、タリウム濃度が４９
ｐｐｍ以下であることを特徴とするボンディングワイヤ
が提供される。To achieve the above object, according to the present invention, there is provided a silver wire and a gold plating film covering the silver wire, wherein the gold plating film has a thallium concentration of 49%.
Provided is a bonding wire characterized by being at most ppm.
【０００７】[0007]
【発明の実施の形態】発明者らは、銀線の表面を金で被
覆したボンディングワイヤでボンディングを行った場
合、ボンディング部の付け根部分で金被覆にひび割れが
生じてしまう理由について調べた。その結果、以下のよ
うなことが明らかになった。BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have investigated the reason why, when bonding is performed with a bonding wire having a silver wire surface coated with gold, the gold coating is cracked at the root of the bonding portion. As a result, the following became clear.
【０００８】銀線の表面を金で被覆したボンディングワ
イヤを製造する場合、金被覆の膜厚を精度よく均一に
し、かつ、効率よく金被覆するするためには、めっき法
を用いるのが最も適している。金めっきを行う場合、析
出する金の結晶粒子の配列を整えるために、通常、めっ
き液にタリウムを添加する。このタリウムは、形成され
た金膜にも少量ながら含まれる。発明者らの研究によれ
ば、銀線に金被覆したボンディングワイヤに生じる金被
覆のひび割れは、金被覆に含まれるタリウムの濃度と関
係がある。すなわち、金被覆に含まれるタリウムの濃度
が高いと、ボンディングした際に金被覆膜にひび割れや
剥離が生じるのである。In the case of manufacturing a bonding wire in which the surface of a silver wire is coated with gold, it is most suitable to use a plating method in order to make the thickness of the gold coating accurate and uniform and to coat the gold efficiently. ing. In the case of performing gold plating, thallium is usually added to a plating solution in order to arrange the arrangement of gold crystal particles to be deposited. This thallium is also contained in a small amount in the formed gold film. According to the study of the inventors, the crack of the gold coating generated on the bonding wire coated with the gold on the silver wire is related to the concentration of thallium contained in the gold coating. That is, when the concentration of thallium contained in the gold coating is high, cracking or peeling occurs in the gold coating film during bonding.
【０００９】そこで、本発明では、銀線の表面を金めっ
き膜で被覆したボンディングワイヤであって、金めっき
膜に含まれるタリウムの濃度を４９ｐｐｍ以下に制御す
ることにより、金被覆のひび割れや剥離を防止する。Therefore, in the present invention, a bonding wire in which the surface of a silver wire is coated with a gold plating film, and the concentration of thallium contained in the gold plating film is controlled to 49 ppm or less, so that the gold coating is cracked or peeled. To prevent
【００１０】以下、本発明の実施の形態のボンディング
ワイヤの製造方法について説明する。Hereinafter, a method for manufacturing a bonding wire according to an embodiment of the present invention will be described.
【００１１】まず、市販の４種の太さの銀線４０を用意
し、この銀線４０の表面に電解めっきにより、一様な膜
厚の金被覆膜４１を形成した（図４）。これにより金被
覆された銀線ワイヤの試料を作製した。その際、銀線４
０の太さごとに、金被覆膜４１の厚さを変えることによ
り、金被覆膜４１を含めたワイヤ全体の断面積に対す
る、金被覆膜４１の断面積の割合が、２．０％の試料
（図２（ａ）のＮｏ２）、９．０％の試料（同Ｎｏ
３）、１０．０％の試料（同Ｎｏ４）、１１．７％の試
料（同Ｎｏ５）、１５．２％の試料（同Ｎｏ６）を作製
した。ただし、ワイヤ試料の直径は、ワイヤ全体（金被
覆膜４１と銀線とを合計した直径）で２５μｍφとなる
ようにした。First, a commercially available silver wire 40 having four different thicknesses was prepared, and a gold coating film 41 having a uniform thickness was formed on the surface of the silver wire 40 by electrolytic plating (FIG. 4). Thus, a sample of the gold-coated silver wire was prepared. At that time, silver wire 4
By changing the thickness of the gold coating film 41 for each thickness of 0, the ratio of the cross-sectional area of the gold coating film 41 to the cross-sectional area of the entire wire including the gold coating film 41 becomes 2.0 % Sample (No. 2 in FIG. 2A) and 9.0% sample (No.
3) A 10.0% sample (No. 4), a 11.7% sample (No. 5), and a 15.2% sample (No. 6) were produced. However, the diameter of the wire sample was set to 25 μmφ for the entire wire (the total diameter of the gold coating film 41 and the silver wire).
【００１２】しかも、上記Ｎｏ２〜Ｎｏ６の金被覆膜の
断面積の割合の異なる試料ごとに、金被覆膜４１に含ま
れるタリウム濃度が、０ｐｐｍ、１１ｐｐｍ、１７ｐｐ
ｍ、４９ｐｐｍ、７３ｐｐｍ、１０２ｐｐｍと異なる６
種類の試料をそれぞれ作製した。なお、タリウム濃度が
０ｐｐｍの試料を作製する際のめっき浴液としては、 金含有量 １５±５ｇ／Ｌ シアン化カリウム ３５±５ｇ／Ｌ 炭酸カリウム １０±２ｇ／Ｌ 水 残部 をものを用いた。めっき時の電流密度は、０．５〜１．
０Ａ／ｃｍ2とした。In addition, the thallium concentration contained in the gold coating film 41 is 0 ppm, 11 ppm, 17 pp for each sample having a different cross-sectional area ratio of the gold coating films No. 2 to No. 6 described above.
m, 49 ppm, 73 ppm, different from 102 ppm 6
Each kind of sample was produced. As a plating bath solution for preparing a sample having a thallium concentration of 0 ppm, a gold content of 15 ± 5 g / L potassium cyanide 35 ± 5 g / L potassium carbonate 10 ± 2 g / L water remainder was used. The current density during plating is 0.5-1.
0 A / cm 2 .
【００１３】タリウム濃度が、１１ｐｐｍ〜１０２ｐｐ
ｍの５種類の試料を作製する際のめっき浴液は、製品
名：テンペレックス９５ＮＤ（日本エレクトロプレイテ
ィング・エンジニヤーズ株式会社製）を用いた。めっき
時の電流密度は、０．４８Ａ／ｃｍ2とした。このめっ
き浴液は、タリウムを含んでいるので、そのタリウム濃
度を調節することにより、析出する金に含まれるタリウ
ムの濃度を１１ｐｐｍ、１７ｐｐｍ、４９ｐｐｍ、７３
ｐｐｍ、１０２ｐｐｍの５種類に制御した。これによ
り、金被覆膜４１に含まれるタリウム濃度の異なるワイ
ヤ試料を作製した。When the thallium concentration is 11 ppm to 102 pp
The product name: Temperex 95ND (manufactured by Japan Electroplating Engineers Co., Ltd.) was used as a plating bath solution for preparing five kinds of samples of m. The current density during plating was 0.48 A / cm 2 . Since this plating bath solution contains thallium, by adjusting the thallium concentration, the concentration of thallium contained in the deposited gold can be increased to 11 ppm, 17 ppm, 49 ppm, 73 ppm.
ppm and 102 ppm. Thus, wire samples having different concentrations of thallium contained in the gold coating film 41 were produced.
【００１４】従来、めっき浴液にタリウムが含まれてい
ないか、もしくは濃度が低いと、析出する金の結晶粒子
の配列が崩れると言われているが、本実施の形態のよう
に銀線表面に金めっきする場合には、タリウムが全く含
まれていないか、濃度が低くても、析出する金めっき膜
の結晶粒子には影響がなく、良好な金被覆膜４１を形成
できた。Conventionally, it has been said that if thallium is not contained in the plating bath solution or its concentration is low, the arrangement of gold crystal particles to be deposited is destroyed. In the case of gold plating, even if thallium was not contained at all or had a low concentration, crystal particles of the deposited gold plating film were not affected, and a good gold coating film 41 could be formed.
【００１５】このようにして作製したワイヤ試料を用い
て、実際にボンディングを行った。ボンディング部は、
いずれの試料も金被覆膜４１と銀線４１とが融け合って
合金化し、良好なボンディング接続が得られていた。ま
た、ボンディング部の付け根付近の試料の金被覆膜４１
を顕微鏡で観察したところ、タリウム濃度が、４９ｐｐ
ｍよりも大きい試料は、金被覆膜４１にひび割れや剥離
が生じていた（図１）。この金被覆膜４１のひび割れや
剥離が起きるかどうかは、金被覆膜４１の断面積の割合
（Ｎｏ２〜Ｎｏ６）が異なっているかどうかには関係な
く、タリウム濃度が同じ試料については共通であった。
このことから、金被覆膜４１のひび割れや剥離が、金被
覆膜４１の厚さに依存するものではなく、金被覆膜４１
のタリウム濃度に依存していることが確認できた。Using the wire sample thus manufactured, bonding was actually performed. The bonding part is
In each sample, the gold coating film 41 and the silver wire 41 were melted and alloyed, and good bonding connection was obtained. Also, the gold coating film 41 of the sample near the base of the bonding portion
Was observed with a microscope, and the thallium concentration was 49 pp.
The sample larger than m had cracks or peeling in the gold coating film 41 (FIG. 1). Whether or not cracking or peeling of the gold coating film 41 occurs is irrespective of whether or not the ratio of the cross-sectional area of the gold coating film 41 (No2 to No6) is different. there were.
For this reason, the cracking or peeling of the gold coating film 41 does not depend on the thickness of the gold coating film 41, but rather depends on the thickness of the gold coating film 41.
Was confirmed to be dependent on the thallium concentration.
【００１６】また、各試料について、一端を半導体チッ
プに熱圧着ボンディングし、他端をリードフレームに超
音波ボンディングしてボンディング強度を調べた。具体
的には、ボンディングしたワイヤ試料の中央部を上方に
引っ張り上げ、いずれかのボンディング部がはずれる荷
重を測定するプルテストと、熱圧着ボンディング部に、
半導体チップの主平面方向に力を加えて、はがれる荷重
を測定するシェアテストを行った。その結果を、金被覆
膜４１の厚さごとにまとめたものを図２（ａ），
（ｂ），（ｃ）に示す。図２（ｂ），（ｃ）のように、
いずれの試料も、比較例である純金の２５μｍφのワイ
ヤと大差がなく、金被覆膜４１の厚さの割合の差は、こ
の範囲内ではボンディング強度に影響しないことがわか
る。また、タリウム濃度の差に依存した強度の分布は見
られなかった。これにより、金被覆膜４１の厚さの割合
の差も、タリウム濃度の差も、ボンディング強度には、
大きな影響を与えないことがわかった。The bonding strength of each sample was examined by bonding one end to a semiconductor chip by thermocompression bonding and the other end to a lead frame by ultrasonic bonding. Specifically, the central part of the bonded wire sample is pulled upward, and a pull test for measuring the load at which one of the bonding parts is disengaged, and a thermocompression bonding part,
A shear test was performed to measure the peeling load by applying a force in the main plane direction of the semiconductor chip. The results are summarized for each thickness of the gold coating film 41 in FIG.
(B) and (c) show. As shown in FIGS. 2B and 2C,
None of the samples had a great difference from the pure gold wire of 25 μmφ of the comparative example, and it was found that the difference in the thickness ratio of the gold coating film 41 did not affect the bonding strength within this range. In addition, no intensity distribution depending on the difference in thallium concentration was observed. Thus, the difference in the thickness ratio of the gold coating film 41, the difference in the thallium concentration, and the bonding strength
Turned out to have no significant effect.
【００１７】さらに、各試料について、長手方向に荷重
を加え、伸び率と破断荷重とを温度を変えて測定した
が、図３のように、比較例である２５μｍφの純金ワイ
ヤと有意な差は見られなかった。Further, for each sample, a load was applied in the longitudinal direction, and the elongation and the breaking load were measured while changing the temperature. As shown in FIG. 3, a significant difference from the pure gold wire of 25 μmφ of the comparative example was found. I couldn't see it.
【００１８】以上のことから、銀線４０の表面にめっき
により金被覆膜４１を形成することにより製造した金被
覆銀ワイヤは、金被覆膜４１のタリウム濃度を４９ｐｐ
ｍ以下にすることにより、ボンディング部の付け根にお
ける金被覆膜４１のひび割れおよび剥がれを防止するこ
とができることが明らかになった。これにより、金被覆
膜４１のひび割れや剥がれ部から銀線の酸化や腐食が生
じる恐れがないため、耐久性の優れたボンディング用ワ
イヤを提供することができる。As described above, the gold-coated silver wire manufactured by forming the gold-coated film 41 on the surface of the silver wire 40 by plating has a thallium concentration of 49 pp in the gold-coated film 41.
It has been clarified that by setting the value to m or less, cracking and peeling of the gold coating film 41 at the base of the bonding portion can be prevented. Thereby, since there is no possibility that the silver wire is oxidized or corroded from the cracked or peeled portion of the gold coating film 41, it is possible to provide a bonding wire having excellent durability.
【００１９】しかも、タリウム濃度を４９ｐｐｍ以下に
しても、ボンディング性能は、純金ワイヤと大差なく、
十分なボンディング強度を得ることができる。しかも、
めっき液のタリウム濃度を低濃度もしくは０にしても、
本実施の形態のように銀線表面に金被覆膜４１を形成す
る場合には問題がないことも明らかになった。Even when the thallium concentration is 49 ppm or less, the bonding performance is not much different from that of the pure gold wire.
A sufficient bonding strength can be obtained. Moreover,
Even if the thallium concentration of the plating solution is low or zero,
It became clear that there is no problem when forming the gold coating film 41 on the surface of the silver wire as in the present embodiment.
【００２０】なお、上述の試料は、全て金被覆膜４１を
含めた全体の直径が２５μｍのものであるが、全体の直
径が１７μｍ〜１００μｍの範囲で、種々の試料を作製
して同様に測定を行った結果、少なくともこの範囲内で
は、直径が２５μｍの試料と同様の結果であった。All of the above-mentioned samples have a total diameter of 25 μm including the gold coating film 41. As a result of the measurement, at least in this range, the same result as that of the sample having a diameter of 25 μm was obtained.
【００２１】なお、上述の実施の形態において、試料ワ
イヤの金被覆膜４１に含まれるタリウム濃度の測定は、
ＩＣＰ（誘導結合プラズマ）発光分析法で行った。分析
用サンプルは、金被覆膜４１をめっきする際に、同じめ
っき浴で別途形成した分析用金めっき膜を用いて作製し
た。また、２次イオン質量分析法（ＳＩＭＳ）等を用い
ることにより、分析用金めっき膜を別途作製しなくと
も、試料ワイヤの金被覆膜にイオンビームを照射して、
直接タリウム濃度を測定することが可能である。In the above-described embodiment, the measurement of the concentration of thallium contained in the gold coating film 41 of the sample wire is performed as follows.
The measurement was performed by ICP (inductively coupled plasma) emission spectrometry. The analysis sample was prepared using an analysis gold plating film separately formed in the same plating bath when the gold coating film 41 was plated. In addition, by using secondary ion mass spectrometry (SIMS) or the like, the gold coating film of the sample wire can be irradiated with an ion beam without separately forming a gold plating film for analysis.
It is possible to measure thallium concentration directly.
【００２２】[0022]
【発明の効果】上述してきたように、本発明によれば、
銀線の表面を金で被覆したボンディングワイヤであっ
て、金被覆にひび割れの生じない耐食性の優れたボンデ
ィングワイヤを提供するができる。As described above, according to the present invention,
It is possible to provide a bonding wire in which the surface of a silver wire is coated with gold, and the gold coating does not crack and has excellent corrosion resistance.
【図１】本発明の実施の形態で作製した金被覆した銀線
試料について、金被覆膜のタリウム濃度と、金被覆膜の
剥がれとの関係を示す説明図。FIG. 1 is an explanatory diagram showing the relationship between the thallium concentration of a gold-coated film and the peeling of the gold-coated film for a gold-coated silver wire sample manufactured in an embodiment of the present invention.
【図２】本発明の実施の形態で作製した金被覆した銀線
試料をボンディングした場合の（ａ）プルテストおよび
シェアテストの結果の一覧を示す説明図、（ｂ）プルテ
スト結果の分布を示すグラフ、（ｃ）シェアテスト結果
の分布を示すグラフ。FIG. 2 is an explanatory diagram showing a list of results of a pull test and a shear test when bonding a gold-coated silver wire sample produced in an embodiment of the present invention, and FIG. 2 (b) is a graph showing the distribution of the pull test results; (C) Graph showing distribution of share test results.
【図３】本発明の実施の形態で作製した金被覆した銀線
試料の伸び率と破断荷重とを示す説明図。FIG. 3 is an explanatory diagram showing elongation and breaking load of a gold-coated silver wire sample manufactured in an embodiment of the present invention.
【図４】本発明の実施の形態で作製した金被覆した銀線
試料の断面構造を示す断面図。FIG. 4 is a cross-sectional view showing a cross-sectional structure of a gold-coated silver wire sample manufactured in the embodiment of the present invention.
４０・・・銀線、４１・・・金被覆膜。 40: silver wire, 41: gold coating film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 梅田 泰 神奈川県横浜市金沢区福浦２丁目10番地１ 株式会社野毛電気工業内 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yasushi Umeda 2-10-1, Fukuura, Kanazawa-ku, Yokohama-shi, Kanagawa Prefecture Noge Electric Industry Co., Ltd.
Claims (3)
有し、 前記金めっき膜は、タリウム濃度が４９ｐｐｍ以下であ
ることを特徴とするボンディングワイヤ。1. A bonding wire comprising a silver wire and a gold plating film covering the silver wire, wherein the gold plating film has a thallium concentration of 49 ppm or less.
たワイヤ全体の直径が、１７μｍ以上１００μｍ以下で
あることを特徴とするボンディングワイヤ。2. The bonding wire according to claim 1, wherein the diameter of the entire wire including the gold plating film is 17 μm or more and 100 μm or less.
金めっき工程を有し、 前記金めっき工程は、形成される前記金膜のタリウム濃
度が４９ｐｐｍ以下になるように、めっき浴液のタリウ
ム濃度を制御することを特徴とするボンディングワイヤ
の製造方法。3. A gold plating step of forming a gold film on a surface of a silver wire by plating, wherein the gold plating step is performed so that a thallium concentration of the gold film to be formed is 49 ppm or less. A method for manufacturing a bonding wire, comprising controlling the thallium concentration of a bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4396198A JPH11243111A (en) | 1998-02-25 | 1998-02-25 | Gold-plated bonding wire and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4396198A JPH11243111A (en) | 1998-02-25 | 1998-02-25 | Gold-plated bonding wire and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11243111A true JPH11243111A (en) | 1999-09-07 |
Family
ID=12678315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4396198A Pending JPH11243111A (en) | 1998-02-25 | 1998-02-25 | Gold-plated bonding wire and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11243111A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10113492A1 (en) * | 2001-03-19 | 2002-10-02 | Astrium Gmbh | Metallic conductor and cryogenic device |
| US6711925B2 (en) * | 2001-12-17 | 2004-03-30 | Asep Tec Co., Ltd. | Process for manufacturing a conductive wire suitable for use in semiconductor packages |
| JP2011105968A (en) * | 2009-11-13 | 2011-06-02 | Renesas Electronics Corp | Method of manufacturing semiconductor integrated circuit device |
| WO2013129253A1 (en) * | 2012-02-27 | 2013-09-06 | 日鉄住金マイクロメタル株式会社 | Power semiconductor device, method for manufacturing same, and bonding wire |
| EP2950335A3 (en) * | 2007-07-24 | 2016-03-30 | Nippon Steel & Sumikin Materials Co., Ltd. | Semiconductor device bonding wire and wire bonding method |
| CN105810652A (en) * | 2015-01-19 | 2016-07-27 | Mk电子株式会社 | Bonding wire |
| WO2019172010A1 (en) | 2018-03-07 | 2019-09-12 | 住友電気工業株式会社 | Plating film and plated member |
| CN113136542A (en) * | 2021-04-26 | 2021-07-20 | 河南机电职业学院 | Preparation method of gold-coated silver bonding wire |
| CN113518687A (en) * | 2019-04-26 | 2021-10-19 | 贺利氏材料新加坡有限公司 | Coated wire |
-
1998
- 1998-02-25 JP JP4396198A patent/JPH11243111A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10113492B4 (en) * | 2001-03-19 | 2005-12-01 | Eads Astrium Gmbh | Electrically conductive wire for applications in low temperature ranges |
| DE10113492A1 (en) * | 2001-03-19 | 2002-10-02 | Astrium Gmbh | Metallic conductor and cryogenic device |
| US6711925B2 (en) * | 2001-12-17 | 2004-03-30 | Asep Tec Co., Ltd. | Process for manufacturing a conductive wire suitable for use in semiconductor packages |
| EP2950335A3 (en) * | 2007-07-24 | 2016-03-30 | Nippon Steel & Sumikin Materials Co., Ltd. | Semiconductor device bonding wire and wire bonding method |
| EP2960931A3 (en) * | 2007-07-24 | 2016-04-27 | Nippon Steel & Sumikin Materials Co., Ltd. | Copper bond wire |
| JP2011105968A (en) * | 2009-11-13 | 2011-06-02 | Renesas Electronics Corp | Method of manufacturing semiconductor integrated circuit device |
| WO2013129253A1 (en) * | 2012-02-27 | 2013-09-06 | 日鉄住金マイクロメタル株式会社 | Power semiconductor device, method for manufacturing same, and bonding wire |
| EP2822029A4 (en) * | 2012-02-27 | 2015-12-23 | Nippon Micrometal Corp | Power semiconductor device, method for manufacturing same, and bonding wire |
| US9059003B2 (en) | 2012-02-27 | 2015-06-16 | Nippon Micrometal Corporation | Power semiconductor device, method of manufacturing the device and bonding wire |
| JP5728126B2 (en) * | 2012-02-27 | 2015-06-03 | 日鉄住金マイクロメタル株式会社 | Power semiconductor device, manufacturing method thereof, and bonding wire |
| CN105810652A (en) * | 2015-01-19 | 2016-07-27 | Mk电子株式会社 | Bonding wire |
| WO2019172010A1 (en) | 2018-03-07 | 2019-09-12 | 住友電気工業株式会社 | Plating film and plated member |
| KR20200129100A (en) | 2018-03-07 | 2020-11-17 | 스미토모덴키고교가부시키가이샤 | Plating film and plating coating member |
| US11380602B2 (en) | 2018-03-07 | 2022-07-05 | Sumitomo Electric Industries, Ltd. | Plating film and plated member |
| CN113518687A (en) * | 2019-04-26 | 2021-10-19 | 贺利氏材料新加坡有限公司 | Coated wire |
| CN113518687B (en) * | 2019-04-26 | 2023-03-10 | 贺利氏材料新加坡有限公司 | Coated wire |
| CN113136542A (en) * | 2021-04-26 | 2021-07-20 | 河南机电职业学院 | Preparation method of gold-coated silver bonding wire |
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