GB2321770A - Stacked capacitor - Google Patents

Stacked capacitor Download PDF

Info

Publication number
GB2321770A
GB2321770A GB9701922A GB9701922A GB2321770A GB 2321770 A GB2321770 A GB 2321770A GB 9701922 A GB9701922 A GB 9701922A GB 9701922 A GB9701922 A GB 9701922A GB 2321770 A GB2321770 A GB 2321770A
Authority
GB
United Kingdom
Prior art keywords
conductive layer
branch
trunk
segment
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9701922A
Other languages
English (en)
Other versions
GB9701922D0 (en
Inventor
Fang-Ching Chao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW085110005A external-priority patent/TW306036B/zh
Priority to JP9007949A priority Critical patent/JP2977077B2/ja
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9701922A priority patent/GB2321770A/en
Publication of GB9701922D0 publication Critical patent/GB9701922D0/en
Priority to FR9705113A priority patent/FR2752489B1/fr
Priority to DE19720210A priority patent/DE19720210A1/de
Publication of GB2321770A publication Critical patent/GB2321770A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9701922A 1996-08-16 1997-01-30 Stacked capacitor Withdrawn GB2321770A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9007949A JP2977077B2 (ja) 1996-08-16 1997-01-20 ツリー型コンデンサを備えた半導体メモリ素子
GB9701922A GB2321770A (en) 1996-08-16 1997-01-30 Stacked capacitor
FR9705113A FR2752489B1 (fr) 1996-08-16 1997-04-25 Dispositif de memoire a semiconducteurs ayant un condensateur de type en arbre
DE19720210A DE19720210A1 (de) 1996-08-16 1997-05-14 Halbleiter-Speichervorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW085110005A TW306036B (en) 1996-08-16 1996-08-16 Semiconductor memory device with capacitor (part 2)
GB9701922A GB2321770A (en) 1996-08-16 1997-01-30 Stacked capacitor

Publications (2)

Publication Number Publication Date
GB9701922D0 GB9701922D0 (en) 1997-03-19
GB2321770A true GB2321770A (en) 1998-08-05

Family

ID=26310894

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9701922A Withdrawn GB2321770A (en) 1996-08-16 1997-01-30 Stacked capacitor

Country Status (4)

Country Link
JP (1) JP2977077B2 (fr)
DE (1) DE19720210A1 (fr)
FR (1) FR2752489B1 (fr)
GB (1) GB2321770A (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516031A1 (fr) * 1991-05-29 1992-12-02 Ramtron International Corporation Cellule de mémoire ferroélectrique empilée et procédé de fabrication
US5460996A (en) * 1993-09-09 1995-10-24 Hyundai Electronics Industries Co. Ltd. Method for the fabrication of a stacked capacitor all in the dynamic semiconductor memory device
US5478768A (en) * 1992-08-03 1995-12-26 Nec Corporation Method of manufacturing a semiconductor memory device having improved hold characteristic of a storage capacitor
US5482886A (en) * 1993-08-30 1996-01-09 Hyundai Electronics Industries Co., Ltd. Method for fabricating dynamic random access memory capacitor
US5543346A (en) * 1993-08-31 1996-08-06 Hyundai Electronics Industries Co., Ltd. Method of fabricating a dynamic random access memory stacked capacitor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0379072A (ja) * 1989-08-22 1991-04-04 Toshiba Corp 半導体記憶装置及びその製造方法
JP2875588B2 (ja) * 1990-05-22 1999-03-31 沖電気工業株式会社 半導体装置の製造方法
US5192703A (en) * 1991-10-31 1993-03-09 Micron Technology, Inc. Method of making tungsten contact core stack capacitor
JPH05198770A (ja) * 1992-01-22 1993-08-06 Matsushita Electric Ind Co Ltd 半導体記憶装置とその製造方法
JP3355504B2 (ja) * 1994-02-25 2002-12-09 日本テキサス・インスツルメンツ株式会社 半導体装置の製造方法及びエッチング液
JP2956482B2 (ja) * 1994-07-29 1999-10-04 日本電気株式会社 半導体記憶装置及びその製造方法
KR0126623B1 (ko) * 1994-08-03 1997-12-26 김주용 반도체소자의 캐패시터 제조방법
KR0138317B1 (ko) * 1994-08-31 1998-04-28 김광호 반도체장치 커패시터 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516031A1 (fr) * 1991-05-29 1992-12-02 Ramtron International Corporation Cellule de mémoire ferroélectrique empilée et procédé de fabrication
US5478768A (en) * 1992-08-03 1995-12-26 Nec Corporation Method of manufacturing a semiconductor memory device having improved hold characteristic of a storage capacitor
US5482886A (en) * 1993-08-30 1996-01-09 Hyundai Electronics Industries Co., Ltd. Method for fabricating dynamic random access memory capacitor
US5543346A (en) * 1993-08-31 1996-08-06 Hyundai Electronics Industries Co., Ltd. Method of fabricating a dynamic random access memory stacked capacitor
US5460996A (en) * 1993-09-09 1995-10-24 Hyundai Electronics Industries Co. Ltd. Method for the fabrication of a stacked capacitor all in the dynamic semiconductor memory device

Also Published As

Publication number Publication date
DE19720210A1 (de) 1998-02-19
FR2752489A1 (fr) 1998-02-20
JP2977077B2 (ja) 1999-11-10
JPH1079487A (ja) 1998-03-24
FR2752489B1 (fr) 2001-05-25
GB9701922D0 (en) 1997-03-19

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)