GB9701922D0 - Semiconductor memory device having a tree-type capacitor - Google Patents

Semiconductor memory device having a tree-type capacitor

Info

Publication number
GB9701922D0
GB9701922D0 GBGB9701922.8A GB9701922A GB9701922D0 GB 9701922 D0 GB9701922 D0 GB 9701922D0 GB 9701922 A GB9701922 A GB 9701922A GB 9701922 D0 GB9701922 D0 GB 9701922D0
Authority
GB
United Kingdom
Prior art keywords
tree
memory device
semiconductor memory
type capacitor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9701922.8A
Other versions
GB2321770A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW085110005A external-priority patent/TW306036B/en
Priority to JP9007949A priority Critical patent/JP2977077B2/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9701922A priority patent/GB2321770A/en
Publication of GB9701922D0 publication Critical patent/GB9701922D0/en
Priority to FR9705113A priority patent/FR2752489B1/en
Priority to DE19720210A priority patent/DE19720210A1/en
Publication of GB2321770A publication Critical patent/GB2321770A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
GB9701922A 1996-08-16 1997-01-30 Stacked capacitor Withdrawn GB2321770A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9007949A JP2977077B2 (en) 1996-08-16 1997-01-20 Semiconductor memory device with tree-type capacitor
GB9701922A GB2321770A (en) 1996-08-16 1997-01-30 Stacked capacitor
FR9705113A FR2752489B1 (en) 1996-08-16 1997-04-25 SEMICONDUCTOR MEMORY DEVICE HAVING A SHAFT TYPE CAPACITOR
DE19720210A DE19720210A1 (en) 1996-08-16 1997-05-14 Semiconductor memory device with capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW085110005A TW306036B (en) 1996-08-16 1996-08-16 Semiconductor memory device with capacitor (part 2)
GB9701922A GB2321770A (en) 1996-08-16 1997-01-30 Stacked capacitor

Publications (2)

Publication Number Publication Date
GB9701922D0 true GB9701922D0 (en) 1997-03-19
GB2321770A GB2321770A (en) 1998-08-05

Family

ID=26310894

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9701922A Withdrawn GB2321770A (en) 1996-08-16 1997-01-30 Stacked capacitor

Country Status (4)

Country Link
JP (1) JP2977077B2 (en)
DE (1) DE19720210A1 (en)
FR (1) FR2752489B1 (en)
GB (1) GB2321770A (en)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0379072A (en) * 1989-08-22 1991-04-04 Toshiba Corp Semiconductor memory device and manufacturing method
JP2875588B2 (en) * 1990-05-22 1999-03-31 沖電気工業株式会社 Method for manufacturing semiconductor device
EP0516031A1 (en) * 1991-05-29 1992-12-02 Ramtron International Corporation Stacked ferroelectric memory cell and method
US5192703A (en) * 1991-10-31 1993-03-09 Micron Technology, Inc. Method of making tungsten contact core stack capacitor
JPH05198770A (en) * 1992-01-22 1993-08-06 Matsushita Electric Ind Co Ltd Semiconductor memory and manufacture thereof
JP2827728B2 (en) * 1992-08-03 1998-11-25 日本電気株式会社 Semiconductor memory device and method of manufacturing the same
KR970000229B1 (en) * 1993-08-30 1997-01-06 현대전자산업 주식회사 Method for manufacturing dram capacitor
US5543346A (en) * 1993-08-31 1996-08-06 Hyundai Electronics Industries Co., Ltd. Method of fabricating a dynamic random access memory stacked capacitor
KR950010078A (en) * 1993-09-09 1995-04-26 김주용 Manufacturing Method of Semiconductor Memory Device
JP3355504B2 (en) * 1994-02-25 2002-12-09 日本テキサス・インスツルメンツ株式会社 Semiconductor device manufacturing method and etchant
JP2956482B2 (en) * 1994-07-29 1999-10-04 日本電気株式会社 Semiconductor memory device and method of manufacturing the same
KR0126623B1 (en) * 1994-08-03 1997-12-26 김주용 Method for fabricating capacitors of semiconductor device
KR0138317B1 (en) * 1994-08-31 1998-04-28 김광호 Manufacture of semiconductor device

Also Published As

Publication number Publication date
DE19720210A1 (en) 1998-02-19
FR2752489A1 (en) 1998-02-20
JP2977077B2 (en) 1999-11-10
JPH1079487A (en) 1998-03-24
FR2752489B1 (en) 2001-05-25
GB2321770A (en) 1998-08-05

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)