GB2239557A - High electron mobility transistors - Google Patents
High electron mobility transistors Download PDFInfo
- Publication number
- GB2239557A GB2239557A GB9005732A GB9005732A GB2239557A GB 2239557 A GB2239557 A GB 2239557A GB 9005732 A GB9005732 A GB 9005732A GB 9005732 A GB9005732 A GB 9005732A GB 2239557 A GB2239557 A GB 2239557A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- buffer layer
- compound semiconductor
- source
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 125000006850 spacer group Chemical group 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 46
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- -1 GaAs compound Chemical class 0.000 claims 1
- 239000007943 implant Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Peptides Or Proteins (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890020733A KR910013568A (ko) | 1989-12-31 | 1989-12-31 | 화합물 반도체 장치 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9005732D0 GB9005732D0 (en) | 1990-05-09 |
| GB2239557A true GB2239557A (en) | 1991-07-03 |
Family
ID=19294785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9005732A Withdrawn GB2239557A (en) | 1989-12-31 | 1990-03-14 | High electron mobility transistors |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH03211839A (de) |
| KR (1) | KR910013568A (de) |
| DE (1) | DE4007896A1 (de) |
| FR (1) | FR2656740A1 (de) |
| GB (1) | GB2239557A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5360755A (en) * | 1990-06-11 | 1994-11-01 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a dual field effect transistor |
| WO2022093330A1 (en) * | 2020-10-30 | 2022-05-05 | Raytheon Company | Group iii-v semiconductor structures having crystalline regrowth layers and methods for forming such structures |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5609055B2 (ja) * | 2009-10-02 | 2014-10-22 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP6690320B2 (ja) * | 2016-03-11 | 2020-04-28 | 住友電気工業株式会社 | 高電子移動度トランジスタ、及び高電子移動度トランジスタの製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0064370A2 (de) * | 1981-04-23 | 1982-11-10 | Fujitsu Limited | Halbleiteranordnung mit hoher Elektronenbeweglichkeit |
| EP0191201A1 (de) * | 1985-01-28 | 1986-08-20 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung mit bidimensionalem Elektronengas |
| EP0301862A2 (de) * | 1987-07-31 | 1989-02-01 | Sony Corporation | Transistoren mit hoher Elektronengeschwindigkeit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60189268A (ja) * | 1984-03-08 | 1985-09-26 | Fujitsu Ltd | 半導体装置 |
| JPS62204578A (ja) * | 1986-03-04 | 1987-09-09 | Nec Corp | 電界効果トランジスタの製造方法 |
| JPS62209865A (ja) * | 1986-03-10 | 1987-09-16 | Nec Corp | 半導体装置の製造方法 |
| JPS62232170A (ja) * | 1986-04-02 | 1987-10-12 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
| JPS63308965A (ja) * | 1987-06-11 | 1988-12-16 | Toshiba Corp | ヘテロ接合電界効果トランジスタ |
| JP2559412B2 (ja) * | 1987-06-22 | 1996-12-04 | 株式会社日立製作所 | 半導体装置 |
-
1989
- 1989-12-31 KR KR1019890020733A patent/KR910013568A/ko not_active IP Right Cessation
-
1990
- 1990-03-09 FR FR9003009A patent/FR2656740A1/fr active Pending
- 1990-03-13 DE DE4007896A patent/DE4007896A1/de not_active Withdrawn
- 1990-03-14 GB GB9005732A patent/GB2239557A/en not_active Withdrawn
- 1990-03-15 JP JP2066749A patent/JPH03211839A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0064370A2 (de) * | 1981-04-23 | 1982-11-10 | Fujitsu Limited | Halbleiteranordnung mit hoher Elektronenbeweglichkeit |
| EP0191201A1 (de) * | 1985-01-28 | 1986-08-20 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung mit bidimensionalem Elektronengas |
| EP0301862A2 (de) * | 1987-07-31 | 1989-02-01 | Sony Corporation | Transistoren mit hoher Elektronengeschwindigkeit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5360755A (en) * | 1990-06-11 | 1994-11-01 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a dual field effect transistor |
| WO2022093330A1 (en) * | 2020-10-30 | 2022-05-05 | Raytheon Company | Group iii-v semiconductor structures having crystalline regrowth layers and methods for forming such structures |
| US11515410B2 (en) | 2020-10-30 | 2022-11-29 | Raytheon Company | Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures |
| TWI815133B (zh) * | 2020-10-30 | 2023-09-11 | 美商雷森公司 | 具有晶體再生層的ⅲ—ⅴ族半導體結構及形成這種結構的方法 |
| US11784248B2 (en) | 2020-10-30 | 2023-10-10 | Raytheon Company | Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4007896A1 (de) | 1991-07-11 |
| GB9005732D0 (en) | 1990-05-09 |
| FR2656740A1 (fr) | 1991-07-05 |
| JPH03211839A (ja) | 1991-09-17 |
| KR910013568A (ko) | 1991-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |