GB2178339B - Method of forming built-up film of fluorinated aliphatic compound on substrate surface - Google Patents

Method of forming built-up film of fluorinated aliphatic compound on substrate surface

Info

Publication number
GB2178339B
GB2178339B GB08614735A GB8614735A GB2178339B GB 2178339 B GB2178339 B GB 2178339B GB 08614735 A GB08614735 A GB 08614735A GB 8614735 A GB8614735 A GB 8614735A GB 2178339 B GB2178339 B GB 2178339B
Authority
GB
United Kingdom
Prior art keywords
film
substrate surface
aliphatic compound
fluorinated aliphatic
forming built
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08614735A
Other languages
English (en)
Other versions
GB8614735D0 (en
GB2178339A (en
Inventor
Seizo Miyata
Hidenari Nakahama
Takeshi Kasuga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Publication of GB8614735D0 publication Critical patent/GB8614735D0/en
Publication of GB2178339A publication Critical patent/GB2178339A/en
Application granted granted Critical
Publication of GB2178339B publication Critical patent/GB2178339B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/18Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202Langmuir Blodgett films (LB films)
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285Langmuir-Blodgett techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
  • Insulating Bodies (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
GB08614735A 1985-06-26 1986-06-17 Method of forming built-up film of fluorinated aliphatic compound on substrate surface Expired GB2178339B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60137850A JPS62572A (ja) 1985-06-26 1985-06-26 フッ素系有機薄膜の製造法

Publications (3)

Publication Number Publication Date
GB8614735D0 GB8614735D0 (en) 1986-07-23
GB2178339A GB2178339A (en) 1987-02-11
GB2178339B true GB2178339B (en) 1988-09-21

Family

ID=15208256

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08614735A Expired GB2178339B (en) 1985-06-26 1986-06-17 Method of forming built-up film of fluorinated aliphatic compound on substrate surface

Country Status (6)

Country Link
US (1) US4696838A (enExample)
JP (1) JPS62572A (enExample)
DE (1) DE3621474C1 (enExample)
FR (1) FR2584083B1 (enExample)
GB (1) GB2178339B (enExample)
IT (1) IT1190344B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261673A (ja) * 1985-09-11 1987-03-18 Kanegafuchi Chem Ind Co Ltd 製膜方法
JPH0653249B2 (ja) * 1987-01-28 1994-07-20 松下電器産業株式会社 表面の酸化防止方法
JPS63274467A (ja) * 1987-04-30 1988-11-11 Nec Corp 高分子含弗素化合物保護膜の形成方法
US5264731A (en) * 1987-06-25 1993-11-23 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
DE3724364A1 (de) * 1987-07-23 1989-02-02 Hoechst Ag Film aus mindestens einer monomolekularen schicht
DE3731606A1 (de) * 1987-09-19 1989-03-30 Hoechst Ag Film aus mindestens einer monomolekularen schicht
JPH0696116B2 (ja) * 1988-01-13 1994-11-30 鐘淵化学工業株式会社 絶縁超薄膜
US5330565A (en) * 1988-07-14 1994-07-19 Nippon Petrochemicals Company Limited Active agent-containing printing ink
US5033404A (en) * 1988-10-26 1991-07-23 Nima Technology Ltd. Barrier mechanism for isolating drive chain from active chamber in Langmuir trough
US5024873A (en) * 1988-12-05 1991-06-18 At&T Bell Laboratories Composite films with Langmuir-Blodgett component
DE3901003A1 (de) * 1989-01-14 1990-07-19 Hoechst Ag Strahlenempfindlicher film aus mindestens einer monomolekularen schicht von fluorhaltigen amphiphilen
US5120603A (en) * 1989-06-22 1992-06-09 Digital Equipment Corporation Magneto-optic recording medium with oriented langmuir-blodgett protective layer
US4962985A (en) * 1989-10-02 1990-10-16 At&T Bell Laboratories Protective coatings for optical devices comprising Langmuir-Blodgett films
EP0615147B1 (en) * 1992-01-16 1998-08-05 Texas Instruments Incorporated Micromechanical deformable mirror device (DMD)
US5502470A (en) * 1991-02-04 1996-03-26 Seiko Epson Corporation Ink jet recording head and process for producing the same
DE69225743T2 (de) * 1991-03-14 1998-09-24 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Oberflächenbehandeltes Material für Bekleidung
DE19731771A1 (de) * 1997-07-24 1999-01-28 Bultykhanova Natalia Abdichtungsverfahren
US5976633A (en) * 1998-03-26 1999-11-02 Lexmark International, Inc. Dip coating through elevated ring
CA2586258A1 (en) * 2004-11-02 2006-05-11 Asahi Glass Company, Limited Fluorocarbon film and process for its production
WO2006059697A1 (ja) * 2004-12-03 2006-06-08 Asahi Glass Company, Limited エチレン-テトラフルオロエチレン系共重合体成形物およびその製造方法
WO2008000680A1 (en) * 2006-06-27 2008-01-03 Clariant International Ltd Fluorous telomeric compounds and polymers containing same
JP2011147890A (ja) * 2010-01-22 2011-08-04 Seiko Epson Corp 薄膜形成方法及び機能性材料の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169904A (en) * 1978-01-05 1979-10-02 International Business Machines Corporation Preparation of polymer monomolecular films
US4276350A (en) * 1979-08-13 1981-06-30 Ppg Industries, Inc. Fluorocarbon treatment for reducing the reactivity of a glass surface and product
US4311764A (en) * 1980-10-01 1982-01-19 Ppg Industries, Inc. Polyurethane surface treatment and resulting monomolecular layered article

Also Published As

Publication number Publication date
IT8620742A0 (it) 1986-06-10
IT8620742A1 (it) 1987-12-10
US4696838A (en) 1987-09-29
GB8614735D0 (en) 1986-07-23
JPH0242392B2 (enExample) 1990-09-21
FR2584083B1 (fr) 1988-07-15
JPS62572A (ja) 1987-01-06
IT1190344B (it) 1988-02-16
DE3621474C1 (de) 1987-02-19
FR2584083A1 (fr) 1987-01-02
GB2178339A (en) 1987-02-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee