FR2584083B1 - Procede de formation d'un film accumule en un compose aliphatique fluore sur la surface d'un substrat - Google Patents

Procede de formation d'un film accumule en un compose aliphatique fluore sur la surface d'un substrat

Info

Publication number
FR2584083B1
FR2584083B1 FR8609212A FR8609212A FR2584083B1 FR 2584083 B1 FR2584083 B1 FR 2584083B1 FR 8609212 A FR8609212 A FR 8609212A FR 8609212 A FR8609212 A FR 8609212A FR 2584083 B1 FR2584083 B1 FR 2584083B1
Authority
FR
France
Prior art keywords
substrate
forming
aliphatic compound
fluorinated aliphatic
accumulated film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8609212A
Other languages
English (en)
Other versions
FR2584083A1 (fr
Inventor
Seizo Miyata
Hidenari Nakahama
Takeshi Kasuga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Publication of FR2584083A1 publication Critical patent/FR2584083A1/fr
Application granted granted Critical
Publication of FR2584083B1 publication Critical patent/FR2584083B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285—Langmuir-Blodgett techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3128—Organic layers, e.g. photoresist by Langmuir-Blodgett techniques
FR8609212A 1985-06-26 1986-06-25 Procede de formation d'un film accumule en un compose aliphatique fluore sur la surface d'un substrat Expired FR2584083B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60137850A JPS62572A (ja) 1985-06-26 1985-06-26 フッ素系有機薄膜の製造法

Publications (2)

Publication Number Publication Date
FR2584083A1 FR2584083A1 (fr) 1987-01-02
FR2584083B1 true FR2584083B1 (fr) 1988-07-15

Family

ID=15208256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8609212A Expired FR2584083B1 (fr) 1985-06-26 1986-06-25 Procede de formation d'un film accumule en un compose aliphatique fluore sur la surface d'un substrat

Country Status (6)

Country Link
US (1) US4696838A (fr)
JP (1) JPS62572A (fr)
DE (1) DE3621474C1 (fr)
FR (1) FR2584083B1 (fr)
GB (1) GB2178339B (fr)
IT (1) IT1190344B (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261673A (ja) * 1985-09-11 1987-03-18 Kanegafuchi Chem Ind Co Ltd 製膜方法
JPH0653249B2 (ja) * 1987-01-28 1994-07-20 松下電器産業株式会社 表面の酸化防止方法
JPS63274467A (ja) * 1987-04-30 1988-11-11 Nec Corp 高分子含弗素化合物保護膜の形成方法
US5264731A (en) * 1987-06-25 1993-11-23 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
DE3724364A1 (de) * 1987-07-23 1989-02-02 Hoechst Ag Film aus mindestens einer monomolekularen schicht
DE3731606A1 (de) * 1987-09-19 1989-03-30 Hoechst Ag Film aus mindestens einer monomolekularen schicht
JPH0696116B2 (ja) * 1988-01-13 1994-11-30 鐘淵化学工業株式会社 絶縁超薄膜
US5330565A (en) * 1988-07-14 1994-07-19 Nippon Petrochemicals Company Limited Active agent-containing printing ink
US5033404A (en) * 1988-10-26 1991-07-23 Nima Technology Ltd. Barrier mechanism for isolating drive chain from active chamber in Langmuir trough
US5024873A (en) * 1988-12-05 1991-06-18 At&T Bell Laboratories Composite films with Langmuir-Blodgett component
DE3901003A1 (de) * 1989-01-14 1990-07-19 Hoechst Ag Strahlenempfindlicher film aus mindestens einer monomolekularen schicht von fluorhaltigen amphiphilen
US5120603A (en) * 1989-06-22 1992-06-09 Digital Equipment Corporation Magneto-optic recording medium with oriented langmuir-blodgett protective layer
US4962985A (en) * 1989-10-02 1990-10-16 At&T Bell Laboratories Protective coatings for optical devices comprising Langmuir-Blodgett films
EP0615147B1 (fr) * 1992-01-16 1998-08-05 Texas Instruments Incorporated Dispositifs micromécanique à miroirs déformables (-DMD-)
JP3160908B2 (ja) * 1991-02-04 2001-04-25 セイコーエプソン株式会社 インクジェット記録ヘッド及びその製造方法
EP0508136B1 (fr) * 1991-03-14 1998-06-03 Matsushita Electric Industrial Co., Ltd. Traitement de surface d'un matériau pour vêtement
DE19731771A1 (de) * 1997-07-24 1999-01-28 Bultykhanova Natalia Abdichtungsverfahren
US5976633A (en) * 1998-03-26 1999-11-02 Lexmark International, Inc. Dip coating through elevated ring
WO2006049153A1 (fr) * 2004-11-02 2006-05-11 Asahi Glass Company, Limited Film de fluorocarbone et procédé servant à produire celui-ci
WO2006059697A1 (fr) * 2004-12-03 2006-06-08 Asahi Glass Company, Limited Moulage de copolymère éthylène-tétrafluoroéthylène et procédé de production dudit moulage
WO2008000680A1 (fr) * 2006-06-27 2008-01-03 Clariant International Ltd Composes telomeriques fluores et polymeres contenant ceux-ci
JP2011147890A (ja) * 2010-01-22 2011-08-04 Seiko Epson Corp 薄膜形成方法及び機能性材料の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169904A (en) * 1978-01-05 1979-10-02 International Business Machines Corporation Preparation of polymer monomolecular films
US4276350A (en) * 1979-08-13 1981-06-30 Ppg Industries, Inc. Fluorocarbon treatment for reducing the reactivity of a glass surface and product
US4311764A (en) * 1980-10-01 1982-01-19 Ppg Industries, Inc. Polyurethane surface treatment and resulting monomolecular layered article

Also Published As

Publication number Publication date
IT8620742A0 (it) 1986-06-10
JPS62572A (ja) 1987-01-06
DE3621474C1 (de) 1987-02-19
US4696838A (en) 1987-09-29
IT8620742A1 (it) 1987-12-10
GB8614735D0 (en) 1986-07-23
GB2178339A (en) 1987-02-11
IT1190344B (it) 1988-02-16
FR2584083A1 (fr) 1987-01-02
GB2178339B (en) 1988-09-21
JPH0242392B2 (fr) 1990-09-21

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Legal Events

Date Code Title Description
ST Notification of lapse