GB2161286B - Method of exposing a semiconductor wafer to light from a mercury-vapor - Google Patents

Method of exposing a semiconductor wafer to light from a mercury-vapor

Info

Publication number
GB2161286B
GB2161286B GB08506125A GB8506125A GB2161286B GB 2161286 B GB2161286 B GB 2161286B GB 08506125 A GB08506125 A GB 08506125A GB 8506125 A GB8506125 A GB 8506125A GB 2161286 B GB2161286 B GB 2161286B
Authority
GB
United Kingdom
Prior art keywords
mercury
exposing
vapor
light
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08506125A
Other languages
English (en)
Other versions
GB8506125D0 (en
GB2161286A (en
Inventor
Takehiro Kira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Publication of GB8506125D0 publication Critical patent/GB8506125D0/en
Publication of GB2161286A publication Critical patent/GB2161286A/en
Application granted granted Critical
Publication of GB2161286B publication Critical patent/GB2161286B/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70016Production of exposure light, i.e. light sources by discharge lamps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00Gas-discharge or vapour-discharge lamps
    • H01J61/82Lamps with high-pressure unconstricted discharge having a cold pressure > 400 Torr
    • H01J61/822High-pressure mercury lamps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Discharge Lamp (AREA)
GB08506125A 1984-07-07 1985-03-08 Method of exposing a semiconductor wafer to light from a mercury-vapor Expired GB2161286B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59139777A JPS6120326A (ja) 1984-07-07 1984-07-07 水銀灯による半導体ウエハ−材料の露光方法

Publications (3)

Publication Number Publication Date
GB8506125D0 GB8506125D0 (en) 1985-04-11
GB2161286A GB2161286A (en) 1986-01-08
GB2161286B true GB2161286B (en) 1988-12-14

Family

ID=15253173

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08506125A Expired GB2161286B (en) 1984-07-07 1985-03-08 Method of exposing a semiconductor wafer to light from a mercury-vapor

Country Status (6)

Country Link
US (1) US4606997A (enExample)
JP (1) JPS6120326A (enExample)
DE (1) DE3510480C2 (enExample)
FR (1) FR2567282B1 (enExample)
GB (1) GB2161286B (enExample)
NL (1) NL190496C (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622443A (ja) * 1985-06-28 1987-01-08 Ushio Inc フオトリソグラフイ
JP2915362B2 (ja) * 1996-09-27 1999-07-05 ウシオ電機株式会社 ショートアーク型水銀ランプ
JP2004521474A (ja) * 2001-06-25 2004-07-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 高圧ガス放電ランプおよび高圧ガス放電ランプの製造方法
JP2024077101A (ja) * 2022-11-28 2024-06-07 ウシオ電機株式会社 照明光学系、露光装置、照射方法、及び部品の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2247176A (en) * 1931-05-13 1941-06-24 Gen Electric Gaseous electric discharge device
US2422280A (en) * 1944-07-24 1947-06-17 Curtis Helene Ind Inc Fluorescent illumination
US4040736A (en) * 1973-09-12 1977-08-09 Kasper Instruments, Inc. Step-and-repeat projection alignment and exposure system
US4024428A (en) * 1975-05-19 1977-05-17 Optical Associates, Incorporated Radiation-sensitive control circuit for driving lamp at various power levels
DE2535921A1 (de) * 1975-08-12 1977-03-03 Patra Patent Treuhand Quecksilberdampf-hochdruckentladungslampe mit zusatz von metallhalogeniden fuer horizontale brennlage
JPS54108478A (en) * 1978-02-14 1979-08-25 Ushio Electric Inc Printing or transcribing method of semiconductor and discharge lamp suitable for printing or transcription
GB2014335B (en) * 1978-02-14 1982-06-03 Kasper Instruments Apparatus for prolonging lamp life by minimizing power requirement levels
DE2845603C2 (de) * 1978-10-19 1982-12-09 Censor Patent- und Versuchs-Anstalt, 9490 Vaduz Verfahren und Einrichtung zum Projektionskopieren
US4226523A (en) * 1978-11-17 1980-10-07 Energy Conversion Devices, Inc. Imaging device
US4226522A (en) * 1978-11-17 1980-10-07 Energy Conversion Devices, Inc. Imaging device
GB2069228B (en) * 1979-01-02 1983-02-23 Gen Electric Stabilised high intensity discharge lamp
EP0080820A3 (en) * 1981-11-27 1983-12-14 Thorn Emi Plc Improvements in or relating to discharge lamps

Also Published As

Publication number Publication date
DE3510480C2 (de) 1993-12-23
NL190496C (nl) 1994-03-16
JPS6120326A (ja) 1986-01-29
FR2567282A1 (fr) 1986-01-10
US4606997A (en) 1986-08-19
GB8506125D0 (en) 1985-04-11
NL190496B (nl) 1993-10-18
DE3510480A1 (de) 1986-01-16
NL8501935A (nl) 1986-02-03
JPH0260051B2 (enExample) 1990-12-14
GB2161286A (en) 1986-01-08
FR2567282B1 (fr) 1990-12-28

Similar Documents

Publication Publication Date Title
DE3175244D1 (en) Method of dicing a semiconductor wafer
JPS57162338A (en) Method of etching semiconductor
EP0234387A3 (en) Method of removing photoresist on a semiconductor wafer
DE3271995D1 (en) Method of manufacturing a semiconductor device
EP0161740A3 (en) Method of manufacturing semiconductor substrate
EP0130819A3 (en) A method of positioning a beam to a specific portion of a semiconductor wafer
KR860002862A (ko) 반도체장치의 제조방법
EP0154419A3 (en) Process for producing an interconnection structure of a semiconductor device
GB2171214B (en) Method of exposing semiconductor wafer by rare gas-mercury discharge lamp
DE3369600D1 (en) Method of manufacturing a semiconductor device by means of plasma etching
IL68357A0 (en) Method of exposure of semiconductor wafers
DE3567320D1 (en) A method of forming a semiconductor device using a mask
KR860005437A (ko) 반도체장치의 제조방법
DE3573328D1 (en) Process for high contrast development of photographic elements
JPS57139936A (en) Method of characterizing semiconductor wafer
GB2203849B (en) Method of exposing a semiconductor wafer to light from a mercury-vapor lamp
DE3365143D1 (en) Method of manufacturing a semiconductor device
ES543020A0 (es) Un metodo de fabricar un dispositivo semiconductor
DE3379762D1 (en) Method of forming a number of solder portions on a semiconductor wafer
GB2161286B (en) Method of exposing a semiconductor wafer to light from a mercury-vapor
GB2043338B (en) Method of treating a semiconductor substrate
EP0167391A3 (en) Method of manufacturing semiconductor devices
GB2161284B (en) Method of exposing a semiconductor wafer to light from a mercury-vapor lamp
GB2161283B (en) Method of exposing a semiconductor wafer to light from a mercury-vapor
EP0489710A3 (en) A mirror wafer of compound semiconductor

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20050307