GB2150779B - Leakage current compensation method and structure for integrated circuits - Google Patents

Leakage current compensation method and structure for integrated circuits

Info

Publication number
GB2150779B
GB2150779B GB08417443A GB8417443A GB2150779B GB 2150779 B GB2150779 B GB 2150779B GB 08417443 A GB08417443 A GB 08417443A GB 8417443 A GB8417443 A GB 8417443A GB 2150779 B GB2150779 B GB 2150779B
Authority
GB
United Kingdom
Prior art keywords
integrated circuits
leakage current
compensation method
current compensation
leakage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08417443A
Other languages
English (en)
Other versions
GB8417443D0 (en
GB2150779A (en
Inventor
Robert Mark Stitt
Rodney Thomas Burt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Tucson Corp
Original Assignee
Burr Brown Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burr Brown Corp filed Critical Burr Brown Corp
Publication of GB8417443D0 publication Critical patent/GB8417443D0/en
Publication of GB2150779A publication Critical patent/GB2150779A/en
Application granted granted Critical
Publication of GB2150779B publication Critical patent/GB2150779B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB08417443A 1983-12-05 1984-07-09 Leakage current compensation method and structure for integrated circuits Expired GB2150779B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55782683A 1983-12-05 1983-12-05

Publications (3)

Publication Number Publication Date
GB8417443D0 GB8417443D0 (en) 1984-08-15
GB2150779A GB2150779A (en) 1985-07-03
GB2150779B true GB2150779B (en) 1987-03-04

Family

ID=24227040

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08417443A Expired GB2150779B (en) 1983-12-05 1984-07-09 Leakage current compensation method and structure for integrated circuits

Country Status (4)

Country Link
JP (1) JPS60124861A (de)
DE (1) DE3444376A1 (de)
FR (1) FR2556133A1 (de)
GB (1) GB2150779B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3615049C2 (de) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrierte Widerstandsanordnung mit Schutzelement gegen Verpolung und Über- bzw. Unterspannung
JPS63274169A (ja) * 1987-05-04 1988-11-11 Rohm Co Ltd 半導体装置
JP2642375B2 (ja) * 1988-01-26 1997-08-20 株式会社東芝 半導体集積回路装置
JP2634679B2 (ja) * 1990-03-12 1997-07-30 シャープ株式会社 Ｐｎｐトランジスタ回路
JP3997550B2 (ja) * 1997-06-11 2007-10-24 セイコーエプソン株式会社 半導体装置及び液晶表示装置並びにそれらを含む電子機器
DE10314151B4 (de) * 2003-03-28 2008-04-24 Infineon Technologies Ag Halbleiterbauelementeanordnung und Verfahren zur Kompensation parasitärer Ströme

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558267A (en) * 1966-08-04 1971-01-26 Du Pont Method for dyeing high-temperature-resistant polyamides and polyimides
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source
US4153909A (en) * 1973-12-10 1979-05-08 National Semiconductor Corporation Gated collector lateral transistor structure and circuits using same
GB2014387B (en) * 1978-02-14 1982-05-19 Motorola Inc Differential to single-ended converter utilizing inverted transistors

Also Published As

Publication number Publication date
JPS60124861A (ja) 1985-07-03
GB8417443D0 (en) 1984-08-15
GB2150779A (en) 1985-07-03
DE3444376A1 (de) 1985-08-01
JPH0556660B2 (de) 1993-08-20
FR2556133A1 (fr) 1985-06-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950709