GB2044998A - Linear semiconductor resistor - Google Patents
Linear semiconductor resistor Download PDFInfo
- Publication number
- GB2044998A GB2044998A GB8008322A GB8008322A GB2044998A GB 2044998 A GB2044998 A GB 2044998A GB 8008322 A GB8008322 A GB 8008322A GB 8008322 A GB8008322 A GB 8008322A GB 2044998 A GB2044998 A GB 2044998A
- Authority
- GB
- United Kingdom
- Prior art keywords
- resistance
- layer
- isolation layer
- resistor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000002955 isolation Methods 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 12
- 239000002800 charge carrier Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 4
- 239000003574 free electron Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
- H03M1/74—Simultaneous conversion
- H03M1/78—Simultaneous conversion using ladder network
- H03M1/785—Simultaneous conversion using ladder network using resistors, i.e. R-2R ladders
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2182979A | 1979-03-19 | 1979-03-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2044998A true GB2044998A (en) | 1980-10-22 |
Family
ID=21806386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8008322A Withdrawn GB2044998A (en) | 1979-03-19 | 1980-03-12 | Linear semiconductor resistor |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS55146957A (de) |
| CA (1) | CA1122721A (de) |
| DE (1) | DE3009042A1 (de) |
| FR (1) | FR2452180A1 (de) |
| GB (1) | GB2044998A (de) |
| SE (1) | SE8002073L (de) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2457606A1 (fr) * | 1979-05-23 | 1980-12-19 | Suwa Seikosha Kk | Circuit de detection et de compensation de temperature pour une montre |
| EP0066041A1 (de) * | 1981-03-30 | 1982-12-08 | Kabushiki Kaisha Toshiba | Halbleitervorrichtung mit Widerstandselementen |
| EP0285440A2 (de) * | 1987-03-31 | 1988-10-05 | Kabushiki Kaisha Toshiba | Diffundierte Widerstandsschaltung |
| WO2003084063A1 (en) * | 2002-03-28 | 2003-10-09 | Hrl Laboratories, Llc | High-efficiency, high output drive current switch with application to digital to analog conversion |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141551A (ja) * | 1982-02-17 | 1983-08-22 | Nec Corp | 半導体装置 |
| JPS59229857A (ja) * | 1983-06-07 | 1984-12-24 | Rohm Co Ltd | 抵抗回路 |
| JPS60139306U (ja) * | 1984-02-25 | 1985-09-14 | 株式会社村田製作所 | 同軸共振器を用いた高周波装置 |
| DE3443773A1 (de) * | 1984-11-30 | 1986-06-05 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierter spannungsteiler |
| DE3526461A1 (de) * | 1985-07-24 | 1987-01-29 | Telefunken Electronic Gmbh | Widerstandskette |
| JPS61172364A (ja) * | 1985-09-27 | 1986-08-04 | Nec Corp | 定電圧回路を形成した半導体装置 |
| JPH0434173Y2 (de) * | 1987-10-27 | 1992-08-14 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2351505A1 (fr) * | 1976-05-13 | 1977-12-09 | Ibm France | Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees |
-
1980
- 1980-03-08 DE DE19803009042 patent/DE3009042A1/de not_active Withdrawn
- 1980-03-12 GB GB8008322A patent/GB2044998A/en not_active Withdrawn
- 1980-03-17 SE SE8002073A patent/SE8002073L/xx unknown
- 1980-03-18 JP JP3468380A patent/JPS55146957A/ja active Granted
- 1980-03-18 CA CA347,882A patent/CA1122721A/en not_active Expired
- 1980-03-18 FR FR8006016A patent/FR2452180A1/fr active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2457606A1 (fr) * | 1979-05-23 | 1980-12-19 | Suwa Seikosha Kk | Circuit de detection et de compensation de temperature pour une montre |
| EP0066041A1 (de) * | 1981-03-30 | 1982-12-08 | Kabushiki Kaisha Toshiba | Halbleitervorrichtung mit Widerstandselementen |
| EP0285440A2 (de) * | 1987-03-31 | 1988-10-05 | Kabushiki Kaisha Toshiba | Diffundierte Widerstandsschaltung |
| EP0285440A3 (de) * | 1987-03-31 | 1990-12-12 | Kabushiki Kaisha Toshiba | Diffundierte Widerstandsschaltung |
| US5111068A (en) * | 1987-03-31 | 1992-05-05 | Kabushiki Kaisha Toshiba | Diffusion resistor circuit |
| WO2003084063A1 (en) * | 2002-03-28 | 2003-10-09 | Hrl Laboratories, Llc | High-efficiency, high output drive current switch with application to digital to analog conversion |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55146957A (en) | 1980-11-15 |
| SE8002073L (sv) | 1980-09-20 |
| JPS6356707B2 (de) | 1988-11-09 |
| CA1122721A (en) | 1982-04-27 |
| DE3009042A1 (de) | 1980-10-02 |
| FR2452180A1 (fr) | 1980-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5552625A (en) | Semiconductor device having a semi-insulating layer | |
| US3967295A (en) | Input transient protection for integrated circuit element | |
| US4458261A (en) | Insulated gate type transistors | |
| US4263518A (en) | Arrangement for correcting the voltage coefficient of resistance of resistors integral with a semiconductor body | |
| EP0202383A1 (de) | Halbleiterbauelement mit Löchern als Ladungsträger | |
| US3881179A (en) | Zener diode structure having three terminals | |
| CA1122721A (en) | Linear semiconductor resistor | |
| EP0623951B1 (de) | Halbleiteranordnung in einer dünnen aktiven Schicht mit hoher Durchbruchspannung | |
| US4631562A (en) | Zener diode structure | |
| US4053915A (en) | Temperature compensated constant current source device | |
| US4200877A (en) | Temperature-compensated voltage reference diode with intermediate polycrystalline layer | |
| US4161742A (en) | Semiconductor devices with matched resistor portions | |
| US4398207A (en) | MOS Digital-to-analog converter with resistor chain using compensating "dummy" metal contacts | |
| US4028718A (en) | Semiconductor Hall element | |
| EP0017919B1 (de) | Diffundierter Widerstand | |
| US4665423A (en) | MIS variable resistor | |
| JP2001168651A (ja) | 半導体装置 | |
| US5959343A (en) | Semiconductor device | |
| GB2104725A (en) | Variable capacitance device | |
| US4651178A (en) | Dual inverse zener diode with buried junctions | |
| EP0186239B1 (de) | Integrierte Schaltung die Kapazitäten mit verschiedenen Werten enthält | |
| US4166224A (en) | Photosensitive zero voltage semiconductor switching device | |
| Meindl | Microelectronic circuit elements | |
| GB1560355A (en) | Transistor-transistor-logic circuit | |
| EP0064614A2 (de) | Emitterstruktur für Halbleiteranordnungen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |