GB201013112D0 - A diamond optical element - Google Patents
A diamond optical elementInfo
- Publication number
- GB201013112D0 GB201013112D0 GBGB1013112.6A GB201013112A GB201013112D0 GB 201013112 D0 GB201013112 D0 GB 201013112D0 GB 201013112 A GB201013112 A GB 201013112A GB 201013112 D0 GB201013112 D0 GB 201013112D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- optical element
- layer
- nitrogen concentration
- single crystal
- crystal diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 4
- 239000010432 diamond Substances 0.000 title abstract 4
- 230000003287 optical effect Effects 0.000 title abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 8
- 229910052757 nitrogen Inorganic materials 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24628—Nonplanar uniform thickness material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Biophysics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1013112.6A GB201013112D0 (en) | 2010-08-04 | 2010-08-04 | A diamond optical element |
CN2011800381281A CN103180241A (zh) | 2010-08-04 | 2011-08-02 | 金刚石光学元件 |
GB1113244.6A GB2482596B (en) | 2010-08-04 | 2011-08-02 | A diamond optical element |
US13/811,262 US9169989B2 (en) | 2010-08-04 | 2011-08-02 | Diamond optical element |
JP2013522231A JP5761876B2 (ja) | 2010-08-04 | 2011-08-02 | ダイヤモンド光学素子 |
PCT/EP2011/063278 WO2012016977A2 (en) | 2010-08-04 | 2011-08-02 | A diamond optical element |
EP11738241.6A EP2601132A2 (en) | 2010-08-04 | 2011-08-02 | A diamond optical element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1013112.6A GB201013112D0 (en) | 2010-08-04 | 2010-08-04 | A diamond optical element |
Publications (1)
Publication Number | Publication Date |
---|---|
GB201013112D0 true GB201013112D0 (en) | 2010-09-22 |
Family
ID=42931181
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB1013112.6A Ceased GB201013112D0 (en) | 2010-08-04 | 2010-08-04 | A diamond optical element |
GB1113244.6A Active GB2482596B (en) | 2010-08-04 | 2011-08-02 | A diamond optical element |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1113244.6A Active GB2482596B (en) | 2010-08-04 | 2011-08-02 | A diamond optical element |
Country Status (6)
Country | Link |
---|---|
US (1) | US9169989B2 (zh) |
EP (1) | EP2601132A2 (zh) |
JP (1) | JP5761876B2 (zh) |
CN (1) | CN103180241A (zh) |
GB (2) | GB201013112D0 (zh) |
WO (1) | WO2012016977A2 (zh) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201015260D0 (en) * | 2010-09-14 | 2010-10-27 | Element Six Ltd | A microfluidic cell and a spin resonance device for use therewith |
US9259818B2 (en) * | 2012-11-06 | 2016-02-16 | Sinmat, Inc. | Smooth diamond surfaces and CMP method for forming |
US9910104B2 (en) | 2015-01-23 | 2018-03-06 | Lockheed Martin Corporation | DNV magnetic field detector |
US10120039B2 (en) | 2015-11-20 | 2018-11-06 | Lockheed Martin Corporation | Apparatus and method for closed loop processing for a magnetic detection system |
US9541610B2 (en) | 2015-02-04 | 2017-01-10 | Lockheed Martin Corporation | Apparatus and method for recovery of three dimensional magnetic field from a magnetic detection system |
US9824597B2 (en) | 2015-01-28 | 2017-11-21 | Lockheed Martin Corporation | Magnetic navigation methods and systems utilizing power grid and communication network |
US9910105B2 (en) | 2014-03-20 | 2018-03-06 | Lockheed Martin Corporation | DNV magnetic field detector |
US9557391B2 (en) | 2015-01-23 | 2017-01-31 | Lockheed Martin Corporation | Apparatus and method for high sensitivity magnetometry measurement and signal processing in a magnetic detection system |
US9823313B2 (en) | 2016-01-21 | 2017-11-21 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensor with circuitry on diamond |
US9853837B2 (en) | 2014-04-07 | 2017-12-26 | Lockheed Martin Corporation | High bit-rate magnetic communication |
US9638821B2 (en) | 2014-03-20 | 2017-05-02 | Lockheed Martin Corporation | Mapping and monitoring of hydraulic fractures using vector magnetometers |
US10012704B2 (en) | 2015-11-04 | 2018-07-03 | Lockheed Martin Corporation | Magnetic low-pass filter |
US10168393B2 (en) | 2014-09-25 | 2019-01-01 | Lockheed Martin Corporation | Micro-vacancy center device |
CA2945016A1 (en) | 2014-04-07 | 2015-10-15 | Lockheed Martin Corporation | Energy efficient controlled magnetic field generator circuit |
DE102014219561A1 (de) | 2014-09-26 | 2016-03-31 | Robert Bosch Gmbh | Einrichtung zur Analyse von Substanzen in einer Probe, Atemgasanalysegerät, Kraftstoffsensor und Verfahren |
DE102014219550A1 (de) | 2014-09-26 | 2016-03-31 | Robert Bosch Gmbh | Kombinationssensor zur Messung von Druck und/oder Temperatur und/oder Magnetfeldern |
BR112017016261A2 (pt) | 2015-01-28 | 2018-03-27 | Lockheed Martin Corporation | carga de energia in situ |
WO2016126435A1 (en) | 2015-02-04 | 2016-08-11 | Lockheed Martin Corporation | Apparatus and method for estimating absolute axes' orientations for a magnetic detection system |
JP2018531414A (ja) * | 2015-09-25 | 2018-10-25 | コーニング インコーポレイテッド | 広角レンズ、および、それを備えた光学アセンブリ |
CN113005516A (zh) | 2015-10-19 | 2021-06-22 | 住友电气工业株式会社 | 单晶金刚石、使用单晶金刚石的工具以及单晶金刚石的制造方法 |
WO2017087014A1 (en) | 2015-11-20 | 2017-05-26 | Lockheed Martin Corporation | Apparatus and method for hypersensitivity detection of magnetic field |
WO2017095454A1 (en) | 2015-12-01 | 2017-06-08 | Lockheed Martin Corporation | Communication via a magnio |
WO2017123261A1 (en) | 2016-01-12 | 2017-07-20 | Lockheed Martin Corporation | Defect detector for conductive materials |
WO2017127096A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensor with dual rf sources |
GB2562957A (en) | 2016-01-21 | 2018-11-28 | Lockheed Corp | Magnetometer with light pipe |
WO2017127098A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensed ferro-fluid hydrophone |
WO2017127095A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensor with common rf and magnetic fields generator |
WO2017127090A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Higher magnetic sensitivity through fluorescence manipulation by phonon spectrum control |
WO2017127097A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Magnetometer with a light emitting diode |
WO2017127079A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Ac vector magnetic anomaly detection with diamond nitrogen vacancies |
US10408890B2 (en) | 2017-03-24 | 2019-09-10 | Lockheed Martin Corporation | Pulsed RF methods for optimization of CW measurements |
US10371765B2 (en) | 2016-07-11 | 2019-08-06 | Lockheed Martin Corporation | Geolocation of magnetic sources using vector magnetometer sensors |
US10571530B2 (en) | 2016-05-31 | 2020-02-25 | Lockheed Martin Corporation | Buoy array of magnetometers |
US10527746B2 (en) | 2016-05-31 | 2020-01-07 | Lockheed Martin Corporation | Array of UAVS with magnetometers |
US10145910B2 (en) | 2017-03-24 | 2018-12-04 | Lockheed Martin Corporation | Photodetector circuit saturation mitigation for magneto-optical high intensity pulses |
US10317279B2 (en) | 2016-05-31 | 2019-06-11 | Lockheed Martin Corporation | Optical filtration system for diamond material with nitrogen vacancy centers |
US10330744B2 (en) | 2017-03-24 | 2019-06-25 | Lockheed Martin Corporation | Magnetometer with a waveguide |
US10359479B2 (en) | 2017-02-20 | 2019-07-23 | Lockheed Martin Corporation | Efficient thermal drift compensation in DNV vector magnetometry |
US10274550B2 (en) | 2017-03-24 | 2019-04-30 | Lockheed Martin Corporation | High speed sequential cancellation for pulsed mode |
US10338163B2 (en) | 2016-07-11 | 2019-07-02 | Lockheed Martin Corporation | Multi-frequency excitation schemes for high sensitivity magnetometry measurement with drift error compensation |
US10345395B2 (en) | 2016-12-12 | 2019-07-09 | Lockheed Martin Corporation | Vector magnetometry localization of subsurface liquids |
US10345396B2 (en) | 2016-05-31 | 2019-07-09 | Lockheed Martin Corporation | Selected volume continuous illumination magnetometer |
US20170343621A1 (en) | 2016-05-31 | 2017-11-30 | Lockheed Martin Corporation | Magneto-optical defect center magnetometer |
US10281550B2 (en) | 2016-11-14 | 2019-05-07 | Lockheed Martin Corporation | Spin relaxometry based molecular sequencing |
US10677953B2 (en) | 2016-05-31 | 2020-06-09 | Lockheed Martin Corporation | Magneto-optical detecting apparatus and methods |
US10228429B2 (en) | 2017-03-24 | 2019-03-12 | Lockheed Martin Corporation | Apparatus and method for resonance magneto-optical defect center material pulsed mode referencing |
WO2018174909A1 (en) * | 2017-03-24 | 2018-09-27 | Lockheed Martin Corporation | Magnetometer with a waveguide |
US10379174B2 (en) | 2017-03-24 | 2019-08-13 | Lockheed Martin Corporation | Bias magnet array for magnetometer |
US10371760B2 (en) | 2017-03-24 | 2019-08-06 | Lockheed Martin Corporation | Standing-wave radio frequency exciter |
US10338164B2 (en) | 2017-03-24 | 2019-07-02 | Lockheed Martin Corporation | Vacancy center material with highly efficient RF excitation |
US10459041B2 (en) | 2017-03-24 | 2019-10-29 | Lockheed Martin Corporation | Magnetic detection system with highly integrated diamond nitrogen vacancy sensor |
CN110945395B (zh) * | 2017-05-19 | 2023-01-17 | 哥本哈根大学 | 相干单光子源 |
LT3711122T (lt) | 2017-11-17 | 2024-03-12 | Uab Brolis Semiconductors | Daugybės daugiamodžių puslaidininkių lazerinių diodų spinduliuočių derinimas, skirtas kryptinės lazerio spinduliuotės paskirstymo priemonėms |
JP6703683B2 (ja) * | 2017-12-20 | 2020-06-03 | 国立研究開発法人産業技術総合研究所 | 単結晶ダイヤモンドおよびそれを用いた半導体素子 |
CN112014922A (zh) * | 2019-05-30 | 2020-12-01 | 上海新微技术研发中心有限公司 | 一种光波导结构及其制造方法 |
DE102019117423A1 (de) * | 2019-06-27 | 2020-12-31 | Universität Leipzig | Verfahren zur Erzeugung zumindest eines deterministischen Farbzentrums in einer Diamantschicht |
DE102019119212A1 (de) * | 2019-07-16 | 2021-01-21 | Carl Zeiss Ag | Vorrichtungen und Verfahren zur magnetfeldabhängigen optischen Detektion |
IL294826A (en) * | 2020-01-20 | 2022-09-01 | M7D Corp | A method for growing larger diamonds |
CN111290059B (zh) * | 2020-03-30 | 2023-01-06 | 湖州中芯半导体科技有限公司 | 一种基于cvd钻石的相干光源装置及其制造方法 |
CN111896511B (zh) * | 2020-08-05 | 2022-05-17 | 中国科学技术大学 | 用于固态自旋的高效荧光收集装置及方法 |
GB2614522B (en) * | 2021-10-19 | 2024-04-03 | Element Six Tech Ltd | CVD single crystal diamond |
KR102709221B1 (ko) * | 2021-12-17 | 2024-09-25 | 한국과학기술연구원 | 단일 광자 광원을 이용한 표면 기능화 방법 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IE74163B1 (en) * | 1991-03-14 | 1997-07-02 | Sumitomo Electric Industries | Infrared optical part and method of making the same |
GB2379451B (en) | 2000-06-15 | 2004-05-05 | Element Six | Thick single crystal diamond layer method for making it and gemstones produced from the layer |
CZ302228B6 (cs) | 2000-06-15 | 2011-01-05 | Element Six (Pty) Ltd | Monokrystalická diamantová vrstva pripravená chemickým vylucováním z plynné fáze |
JP2004538230A (ja) | 2001-08-08 | 2004-12-24 | アポロ ダイアモンド,インコーポレイティド | 合成ダイヤモンドを生成するためのシステム及び方法 |
GB2433738B (en) * | 2002-11-21 | 2007-08-15 | Element Six Ltd | Optical Quality Diamond Material |
GB0227261D0 (en) | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
TWI269886B (en) * | 2003-03-20 | 2007-01-01 | Hamamatsu Photonics Kk | Microscope and specimen observation method |
KR101110468B1 (ko) * | 2003-10-31 | 2012-01-31 | 하마마츠 포토닉스 가부시키가이샤 | 시료 관찰 방법 및 현미경, 및 이것에 이용하는 고침 렌즈및 광학 밀착액 |
WO2006076354A2 (en) * | 2005-01-11 | 2006-07-20 | Apollo Diamond, Inc. | Diamond medical devices |
US7829377B2 (en) * | 2005-01-11 | 2010-11-09 | Apollo Diamond, Inc | Diamond medical devices |
US7122837B2 (en) * | 2005-01-11 | 2006-10-17 | Apollo Diamond, Inc | Structures formed in diamond |
US20060163584A1 (en) * | 2005-01-26 | 2006-07-27 | Robert Linares | Boron-doped diamond semiconductor |
EP2253733B1 (en) * | 2005-06-22 | 2012-03-21 | Element Six Limited | High colour diamond |
GB0513932D0 (en) | 2005-07-08 | 2005-08-17 | Element Six Ltd | Single crystal diamond elements having spherical surfaces |
US9133566B2 (en) * | 2005-12-09 | 2015-09-15 | Element Six Technologies Limited | High crystalline quality synthetic diamond |
US7582403B2 (en) * | 2006-07-17 | 2009-09-01 | E. I. Du Pont De Nemours And Company | Metal compositions, thermal imaging donors and patterned multilayer compositions derived therefrom |
US8168413B2 (en) * | 2006-11-22 | 2012-05-01 | Academia Sinica | Luminescent diamond particles |
JP4986131B2 (ja) * | 2007-01-24 | 2012-07-25 | 住友電気工業株式会社 | ダイヤモンド単結晶基板及び、その製造方法 |
JP5067571B2 (ja) * | 2008-07-16 | 2012-11-07 | 住友電気工業株式会社 | ダイヤモンド単結晶基板とその製造方法 |
JP4924952B2 (ja) | 2008-07-17 | 2012-04-25 | 住友金属工業株式会社 | 熱延鋼板の冷却方法及び冷却設備 |
GB0813491D0 (en) * | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
GB0813490D0 (en) * | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
JP2013519993A (ja) * | 2010-02-17 | 2013-05-30 | ネクスト ライティング コーポレイション | 発光素子およびリモート発光材料を有する照明ストリップを有する照明ユニット |
-
2010
- 2010-08-04 GB GBGB1013112.6A patent/GB201013112D0/en not_active Ceased
-
2011
- 2011-08-02 WO PCT/EP2011/063278 patent/WO2012016977A2/en active Application Filing
- 2011-08-02 EP EP11738241.6A patent/EP2601132A2/en not_active Withdrawn
- 2011-08-02 GB GB1113244.6A patent/GB2482596B/en active Active
- 2011-08-02 US US13/811,262 patent/US9169989B2/en active Active
- 2011-08-02 CN CN2011800381281A patent/CN103180241A/zh active Pending
- 2011-08-02 JP JP2013522231A patent/JP5761876B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2012016977A3 (en) | 2012-08-23 |
EP2601132A2 (en) | 2013-06-12 |
WO2012016977A2 (en) | 2012-02-09 |
US20130270991A1 (en) | 2013-10-17 |
JP5761876B2 (ja) | 2015-08-12 |
CN103180241A (zh) | 2013-06-26 |
GB201113244D0 (en) | 2011-09-14 |
GB2482596A (en) | 2012-02-08 |
GB2482596B (en) | 2014-09-03 |
US9169989B2 (en) | 2015-10-27 |
JP2013540198A (ja) | 2013-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB201113244D0 (en) | A diamond optical element | |
WO2010048607A3 (en) | Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing | |
WO2012118947A3 (en) | Apparatus and process for atomic layer deposition | |
WO2012002995A3 (en) | Thin films and methods of making them using cyclohexasilane | |
WO2012024114A3 (en) | Methods for forming a hydrogen free silicon containing dielectric film | |
WO2011126612A3 (en) | Nitrogen doped amorphous carbon hardmask | |
WO2013003676A3 (en) | Systems and methods for controlling etch selectivity of various materials | |
WO2010092482A3 (en) | Migration and plasma enhanced chemical vapor deposition | |
WO2011008925A3 (en) | Methods for forming dielectric layers | |
TW200715375A (en) | Low-temperature catalyzed formation of segmented nanowire of dielectric material | |
WO2010095901A3 (en) | Method for forming thin film using radicals generated by plasma | |
WO2012069451A3 (en) | Thermal gradient chemical vapour deposition apparatus and method | |
TW201130016A (en) | Methods of selectively depositing an epitaxial layer | |
MY158420A (en) | P-doped silicon layers | |
WO2012057517A3 (ko) | 화합물 반도체 장치 및 화합물 반도체 제조방법 | |
TW200628642A (en) | Ultratough CVD single crystal diamond and three dimensional growth thereof | |
MY159243A (en) | Single crystal diamond material | |
WO2013154504A3 (en) | Microwave plasma chemical vapour deposition apparatus | |
EP2514858A4 (en) | GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE HAVING AN EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF | |
WO2010068419A3 (en) | Production of single crystal cvd diamond rapid growth rate | |
WO2012051618A3 (en) | Method for producing gallium nitride substrates for electronic and optoelectronic devices | |
EA201001020A1 (ru) | Стеклянное изделие и способ изготовления стеклянного изделия | |
FI20115321A0 (fi) | Menetelmä yhden tai useamman monikiteisen piikerroksen kerrrostamiseksi substraatille | |
PL2122015T3 (pl) | Sposób wytwarzania monokryształu azotku przez wzrost epitaksjalny na podłożu zapobiegającym wzrostowi na krawędziach podłoża | |
GB201020503D0 (en) | Nanopore devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |