GB1561177A - Growing smooth epitaxial layers on misoriented substrates - Google Patents
Growing smooth epitaxial layers on misoriented substrates Download PDFInfo
- Publication number
- GB1561177A GB1561177A GB50060/76A GB5006076A GB1561177A GB 1561177 A GB1561177 A GB 1561177A GB 50060/76 A GB50060/76 A GB 50060/76A GB 5006076 A GB5006076 A GB 5006076A GB 1561177 A GB1561177 A GB 1561177A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- degrees
- angle
- misoriented
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title claims description 54
- 238000000034 method Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000012047 saturated solution Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 239000012071 phase Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- -1 Ga P Chemical class 0.000 description 1
- 229910017784 Sb In Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63656475A | 1975-12-01 | 1975-12-01 | |
| US05/660,472 US4050964A (en) | 1975-12-01 | 1976-02-23 | Growing smooth epitaxial layers on misoriented substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1561177A true GB1561177A (en) | 1980-02-13 |
Family
ID=27092638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB50060/76A Expired GB1561177A (en) | 1975-12-01 | 1976-12-01 | Growing smooth epitaxial layers on misoriented substrates |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4050964A (https=) |
| JP (1) | JPS6054279B2 (https=) |
| DE (1) | DE2653532C2 (https=) |
| FR (1) | FR2333567A1 (https=) |
| GB (1) | GB1561177A (https=) |
| IT (1) | IT1069886B (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2641347C2 (de) * | 1976-09-14 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von epitaxialen Schichten auf einkristallinen Substraten |
| DE2817797A1 (de) * | 1978-04-22 | 1979-10-25 | Massachusetts Inst Technology | Substrat mit filmartiger oberschicht und verfahren zur verbesserung der epitaxie bei der filmbildung auf einem festen substrat |
| NL7905544A (nl) * | 1979-03-01 | 1980-09-03 | Philips Nv | Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat. |
| DE2910723A1 (de) * | 1979-03-19 | 1980-09-25 | Siemens Ag | Verfahren zum herstellen von epitaktischen halbleitermaterialschichten auf einkristallinen substraten nach der fluessigphasen-schiebe-epitaxie |
| US4540450A (en) * | 1982-06-02 | 1985-09-10 | The United States Of America As Represented By The Secretary Of The Air Force | InP:Te Protective layer process for reducing substrate dissociation |
| US4523318A (en) * | 1982-10-29 | 1985-06-11 | Rca Corporation | Semiconductor laser having high manufacturing yield |
| US4522661A (en) * | 1983-06-24 | 1985-06-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Low defect, high purity crystalline layers grown by selective deposition |
| US4591889A (en) * | 1984-09-14 | 1986-05-27 | At&T Bell Laboratories | Superlattice geometry and devices |
| US5279701A (en) * | 1988-05-11 | 1994-01-18 | Sharp Kabushiki Kaisha | Method for the growth of silicon carbide single crystals |
| US5230768A (en) * | 1990-03-26 | 1993-07-27 | Sharp Kabushiki Kaisha | Method for the production of SiC single crystals by using a specific substrate crystal orientation |
| JPH03278542A (ja) * | 1990-03-28 | 1991-12-10 | Hitachi Ltd | 半導体装置 |
| US6229197B1 (en) * | 1993-04-30 | 2001-05-08 | Texas Instruments Incorporated | Epitaxial overgrowth method and devices |
| US5762706A (en) * | 1993-11-09 | 1998-06-09 | Fujitsu Limited | Method of forming compound semiconductor device |
| US6188090B1 (en) * | 1995-08-31 | 2001-02-13 | Fujitsu Limited | Semiconductor device having a heteroepitaxial substrate |
| JP2914246B2 (ja) * | 1995-10-12 | 1999-06-28 | 昭和電工株式会社 | エピタキシャルウエハおよび半導体発光素子 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3325314A (en) * | 1961-10-27 | 1967-06-13 | Siemens Ag | Semi-conductor product and method for making same |
| NL284785A (https=) * | 1961-10-27 | |||
| NL295293A (https=) * | 1962-07-13 | |||
| DE1544233A1 (de) * | 1963-09-26 | 1970-10-22 | Nippon Electric Co | Epitaxial-Aufwachsverfahren fuer Halbleiterkristalle |
| US3379584A (en) * | 1964-09-04 | 1968-04-23 | Texas Instruments Inc | Semiconductor wafer with at least one epitaxial layer and methods of making same |
| US3476592A (en) * | 1966-01-14 | 1969-11-04 | Ibm | Method for producing improved epitaxial films |
| US3471324A (en) * | 1966-12-23 | 1969-10-07 | Texas Instruments Inc | Epitaxial gallium arsenide |
| CH532959A (de) * | 1967-10-20 | 1973-01-31 | Philips Nv | Verfahren zum Kristallisieren einer binären Halbleiterverbindung |
| NL171309C (nl) * | 1970-03-02 | 1983-03-01 | Hitachi Ltd | Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium. |
| JPS4847272A (https=) * | 1971-10-18 | 1973-07-05 | ||
| JPS537397B2 (https=) * | 1971-12-28 | 1978-03-17 | ||
| JPS5032901B2 (https=) * | 1972-04-28 | 1975-10-25 | ||
| JPS5438599B2 (https=) * | 1973-02-15 | 1979-11-21 | ||
| US3899371A (en) * | 1973-06-25 | 1975-08-12 | Rca Corp | Method of forming PN junctions by liquid phase epitaxy |
| JPS5134666A (en) * | 1974-09-19 | 1976-03-24 | Tokyo Shibaura Electric Co | 335 zokukagobutsuhandotai no kisoseichohoho |
-
1976
- 1976-02-23 US US05/660,472 patent/US4050964A/en not_active Expired - Lifetime
- 1976-11-24 FR FR7635387A patent/FR2333567A1/fr active Granted
- 1976-11-25 DE DE2653532A patent/DE2653532C2/de not_active Expired
- 1976-11-29 IT IT69851/76A patent/IT1069886B/it active
- 1976-11-29 JP JP51142367A patent/JPS6054279B2/ja not_active Expired
- 1976-12-01 GB GB50060/76A patent/GB1561177A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4050964A (en) | 1977-09-27 |
| JPS5268079A (en) | 1977-06-06 |
| FR2333567A1 (fr) | 1977-07-01 |
| DE2653532C2 (de) | 1985-11-07 |
| JPS6054279B2 (ja) | 1985-11-29 |
| FR2333567B1 (https=) | 1981-09-04 |
| DE2653532A1 (de) | 1977-06-02 |
| IT1069886B (it) | 1985-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19951201 |