GB1527106A - Method of etching multilayered articles - Google Patents

Method of etching multilayered articles

Info

Publication number
GB1527106A
GB1527106A GB41356/75A GB4135675A GB1527106A GB 1527106 A GB1527106 A GB 1527106A GB 41356/75 A GB41356/75 A GB 41356/75A GB 4135675 A GB4135675 A GB 4135675A GB 1527106 A GB1527106 A GB 1527106A
Authority
GB
United Kingdom
Prior art keywords
etching
layer
multilayered articles
oct
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB41356/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Teletype Corp
Original Assignee
Teletype Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teletype Corp filed Critical Teletype Corp
Publication of GB1527106A publication Critical patent/GB1527106A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials

Landscapes

  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Local Oxidation Of Silicon (AREA)
GB41356/75A 1974-10-10 1975-10-09 Method of etching multilayered articles Expired GB1527106A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US513908A US3920471A (en) 1974-10-10 1974-10-10 Prevention of aluminum etching during silox photoshaping

Publications (1)

Publication Number Publication Date
GB1527106A true GB1527106A (en) 1978-10-04

Family

ID=24045078

Family Applications (1)

Application Number Title Priority Date Filing Date
GB41356/75A Expired GB1527106A (en) 1974-10-10 1975-10-09 Method of etching multilayered articles

Country Status (5)

Country Link
US (1) US3920471A (https=)
JP (1) JPS5164873A (https=)
DE (1) DE2545153C2 (https=)
FR (1) FR2287524A1 (https=)
GB (1) GB1527106A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2288392A1 (fr) * 1974-10-18 1976-05-14 Radiotechnique Compelec Procede de realisation de dispositifs semiconducteurs
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
DE4424145A1 (de) * 1993-10-14 1995-04-20 Hewlett Packard Co Fluor-passivierte chromatographische Systeme
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
JPH07283166A (ja) * 1994-02-20 1995-10-27 Semiconductor Energy Lab Co Ltd コンタクトホールの作製方法
TW371775B (en) * 1995-04-28 1999-10-11 Siemens Ag Method for the selective removal of silicon dioxide
ATE256770T1 (de) * 2001-06-20 2004-01-15 Wolf-Dieter Franz Verfahren zum reinigen und passivieren von leichtmetalllegierungsoberflächen
US8772133B2 (en) * 2012-06-11 2014-07-08 Infineon Technologies Ag Utilization of a metallization scheme as an etching mask

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1600285A (https=) * 1968-03-28 1970-07-20
US3650960A (en) * 1969-05-06 1972-03-21 Allied Chem Etching solutions
DE1951968A1 (de) * 1969-10-15 1971-04-22 Philips Patentverwaltung AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten
US3841905A (en) * 1970-11-19 1974-10-15 Rbp Chem Corp Method of preparing printed circuit boards with terminal tabs
US3867218A (en) * 1973-04-25 1975-02-18 Philips Corp Method of etching a pattern in a silicon nitride layer

Also Published As

Publication number Publication date
JPS5164873A (en) 1976-06-04
FR2287524B1 (https=) 1980-03-28
JPS579492B2 (https=) 1982-02-22
DE2545153A1 (de) 1976-04-22
US3920471A (en) 1975-11-18
DE2545153C2 (de) 1985-12-12
FR2287524A1 (fr) 1976-05-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee