GB1513000A - Multilayer semiconductor switching devices - Google Patents

Multilayer semiconductor switching devices

Info

Publication number
GB1513000A
GB1513000A GB28890/75A GB2889075A GB1513000A GB 1513000 A GB1513000 A GB 1513000A GB 28890/75 A GB28890/75 A GB 28890/75A GB 2889075 A GB2889075 A GB 2889075A GB 1513000 A GB1513000 A GB 1513000A
Authority
GB
United Kingdom
Prior art keywords
switching devices
semiconductor switching
multilayer semiconductor
mouldings
filler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28890/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB1513000A publication Critical patent/GB1513000A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thyristors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
GB28890/75A 1974-07-15 1975-07-09 Multilayer semiconductor switching devices Expired GB1513000A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48878974A 1974-07-15 1974-07-15

Publications (1)

Publication Number Publication Date
GB1513000A true GB1513000A (en) 1978-06-01

Family

ID=23941129

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28890/75A Expired GB1513000A (en) 1974-07-15 1975-07-09 Multilayer semiconductor switching devices

Country Status (7)

Country Link
JP (1) JPS5133986A (cg-RX-API-DMAC7.html)
BE (1) BE831400A (cg-RX-API-DMAC7.html)
CH (2) CH609714A5 (cg-RX-API-DMAC7.html)
DE (1) DE2531249A1 (cg-RX-API-DMAC7.html)
FR (1) FR2279224A1 (cg-RX-API-DMAC7.html)
GB (1) GB1513000A (cg-RX-API-DMAC7.html)
NL (1) NL7508200A (cg-RX-API-DMAC7.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2221092A (en) * 1988-07-19 1990-01-24 Tektronix Inc "a semiconductor integrated circuit with temperature sensor"
US9054706B2 (en) 2013-06-24 2015-06-09 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9742395B2 (en) 2014-11-06 2017-08-22 Ideal Power Inc. Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2560441B1 (fr) * 1984-02-28 1986-06-13 Telemecanique Electrique Structure de thyristor a emetteur a double couche, destine a la commutation par tout ou rien de tensions elevees
FR2574594B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
FR2688941B1 (fr) * 1992-03-20 1994-06-17 Sgs Thomson Microelectronics Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode.
DE19721365A1 (de) * 1997-05-22 1998-11-26 Asea Brown Boveri Beidseitig steuerbarer Thyristor
CN109326640A (zh) * 2018-10-25 2019-02-12 深圳市鹏朗贸易有限责任公司 一种门极换流晶闸管及其制造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2221092A (en) * 1988-07-19 1990-01-24 Tektronix Inc "a semiconductor integrated circuit with temperature sensor"
GB2221092B (en) * 1988-07-19 1992-06-03 Tektronix Inc Integrated circuit and method of treating an integrated circuit
US9647553B2 (en) 2013-06-24 2017-05-09 Ideal Power Inc. Bidirectional two-base bipolar junction transistor operation, circuits, and systems with double base short at initial turn-off
US9369125B2 (en) 2013-06-24 2016-06-14 Ideal Power Inc. Bidirectional two-base bipolar junction transistor operation, circuits, and systems with collector-side base driven
US9059710B2 (en) 2013-06-24 2015-06-16 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors
US9209798B2 (en) 2013-06-24 2015-12-08 Ideal Power Inc. Bidirectional bipolar junction transistor operation, circuits, and systems with two base junctions clamped by default
US9231582B1 (en) 2013-06-24 2016-01-05 Ideal Power Inc. Bidirectional two-base bipolar junction transistor devices, operation, circuits, and systems with diode-mode turn-on and collector-side base driven
US9356595B2 (en) 2013-06-24 2016-05-31 Ideal Power Inc. Bidirectional two-base bipolar junction transistor devices, operation, circuits, and systems with collector-side base driven, diode-mode turn-on, double base short at initial turn-off, and two base junctions clamped by default
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US9054707B2 (en) 2013-06-24 2015-06-09 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors
US9374084B2 (en) 2013-06-24 2016-06-21 Ideal Power Inc. Bidirectional two-base bipolar junction transistor operation, circuits, and systems with diode-mode turn-on
US9374085B2 (en) 2013-06-24 2016-06-21 Ideal Power Inc. Bidirectional two-base bipolar junction transistor operation, circuits, and systems with double base short at initial turn-off
US9054706B2 (en) 2013-06-24 2015-06-09 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9742395B2 (en) 2014-11-06 2017-08-22 Ideal Power Inc. Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors

Also Published As

Publication number Publication date
DE2531249A1 (de) 1976-02-05
CH609814A5 (en) 1979-03-15
FR2279224B1 (cg-RX-API-DMAC7.html) 1981-12-24
BE831400A (fr) 1976-01-15
CH609714A5 (en) 1979-03-15
NL7508200A (nl) 1976-01-19
FR2279224A1 (fr) 1976-02-13
JPS5133986A (en) 1976-03-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee