GB1509135A - Gas plasma vapour etching device and method - Google Patents

Gas plasma vapour etching device and method

Info

Publication number
GB1509135A
GB1509135A GB1089976A GB1089976A GB1509135A GB 1509135 A GB1509135 A GB 1509135A GB 1089976 A GB1089976 A GB 1089976A GB 1089976 A GB1089976 A GB 1089976A GB 1509135 A GB1509135 A GB 1509135A
Authority
GB
United Kingdom
Prior art keywords
gas
gas plasma
etching device
article
plasma vapour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1089976A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Burroughs Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burroughs Corp filed Critical Burroughs Corp
Publication of GB1509135A publication Critical patent/GB1509135A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
GB1089976A 1975-04-18 1976-03-18 Gas plasma vapour etching device and method Expired GB1509135A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56957575A 1975-04-18 1975-04-18

Publications (1)

Publication Number Publication Date
GB1509135A true GB1509135A (en) 1978-04-26

Family

ID=24275994

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1089976A Expired GB1509135A (en) 1975-04-18 1976-03-18 Gas plasma vapour etching device and method

Country Status (2)

Country Link
FR (1) FR2308200A1 (fr)
GB (1) GB1509135A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073643A1 (fr) * 1981-08-27 1983-03-09 Mitsubishi Materials Corporation Dispositif de pulvérisation
CN102359676A (zh) * 2011-09-26 2012-02-22 常州捷佳创精密机械有限公司 一种槽底排水管道联接装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183780A (en) * 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching
JPS6151633B2 (fr) * 1979-08-09 1986-11-10 Ei Teii Ando Teii Tekunorojiizu Inc
US4298443A (en) * 1979-08-09 1981-11-03 Bell Telephone Laboratories, Incorporated High capacity etching apparatus and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073643A1 (fr) * 1981-08-27 1983-03-09 Mitsubishi Materials Corporation Dispositif de pulvérisation
CN102359676A (zh) * 2011-09-26 2012-02-22 常州捷佳创精密机械有限公司 一种槽底排水管道联接装置
CN102359676B (zh) * 2011-09-26 2015-12-09 常州捷佳创精密机械有限公司 一种槽底排水管道联接装置

Also Published As

Publication number Publication date
FR2308200A1 (fr) 1976-11-12
FR2308200B1 (fr) 1980-10-31

Similar Documents

Publication Publication Date Title
US4182646A (en) Process of etching with plasma etch gas
GB1523267A (en) Plasma etching apparatus
ATE331298T1 (de) Verbesserte methode eine oxidschicht zu ätzen
DE69740130D1 (de) Plasma-ätzreaktor und verfahren zum ätzen eines wafers
JPS5684476A (en) Etching method of gas plasma
EP0004285A1 (fr) Procédé de décapage de bioxyde de silicium à l'aide d'un plasma à une vitesse plus élevée que celle pour le silicium dans un article comportant les deux
Wagner et al. DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products
US5209803A (en) Parallel plate reactor and method of use
GB1509135A (en) Gas plasma vapour etching device and method
KR930014829A (ko) 에칭방법
JPS54124683A (en) Processing method of silicon wafer
EP0203560A1 (fr) Gravure de tranchées à l'aide de plasma
JPS57174466A (en) Dry etching method
JPS572585A (en) Forming method for aluminum electrode
JPH05251399A (ja) 枚葉式エッチャーによるシリコン窒化膜のエッチング方法
JPS53110378A (en) Plasma carrying device
JPS5454578A (en) Gas plasma etching method
JPS5547381A (en) Plasma etching method
JPS6459820A (en) Dry etching
JPS5655051A (en) Plasma etching method and device therefor
JPS51124379A (en) Plasma etching method
JPS5739535A (en) Etching control method
JPS54101273A (en) Manufacture for semiconductor device
TW344118B (en) Etch process for single crystal silicon
JPS52122284A (en) Sputtering device having bias electrode

Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee