GB1502953A - Semiconductor device and a method of fabricating the same - Google Patents
Semiconductor device and a method of fabricating the sameInfo
- Publication number
- GB1502953A GB1502953A GB7109/75A GB710975A GB1502953A GB 1502953 A GB1502953 A GB 1502953A GB 7109/75 A GB7109/75 A GB 7109/75A GB 710975 A GB710975 A GB 710975A GB 1502953 A GB1502953 A GB 1502953A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- type
- mesa
- gaas
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2426174A JPS5248066B2 (pl) | 1974-03-04 | 1974-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1502953A true GB1502953A (en) | 1978-03-08 |
Family
ID=12133281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7109/75A Expired GB1502953A (en) | 1974-03-04 | 1975-02-20 | Semiconductor device and a method of fabricating the same |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5248066B2 (pl) |
DE (1) | DE2507357C2 (pl) |
FR (1) | FR2263624B1 (pl) |
GB (1) | GB1502953A (pl) |
NL (1) | NL165891C (pl) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2154059A (en) * | 1984-01-25 | 1985-08-29 | Hitachi Ltd | Light emitting chip and communication apparatus using the same |
US4701927A (en) * | 1984-01-25 | 1987-10-20 | Hitachi, Ltd. | Light emitting chip and optical communication apparatus using the same |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS576273B2 (pl) * | 1975-03-08 | 1982-02-04 | ||
JPS531482A (en) * | 1976-06-25 | 1978-01-09 | Mitsubishi Electric Corp | Semiconductor injection type laser |
NL7609607A (nl) * | 1976-08-30 | 1978-03-02 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
US4169997A (en) * | 1977-05-06 | 1979-10-02 | Bell Telephone Laboratories, Incorporated | Lateral current confinement in junction lasers |
CA1147045A (en) * | 1978-09-20 | 1983-05-24 | Naoki Chinone | Semiconductor laser device |
FR2502847A1 (fr) * | 1981-03-25 | 1982-10-01 | Western Electric Co | Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant |
GB2156584B (en) * | 1984-03-16 | 1987-11-04 | Hitachi Ltd | Semiconductor laser chip |
JPWO2004073125A1 (ja) * | 2003-02-12 | 2006-06-01 | シャープ株式会社 | 半導体レーザ素子、光学ヘッド、及び情報記録装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3359508A (en) * | 1964-02-19 | 1967-12-19 | Gen Electric | High power junction laser structure |
GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
DE2137892C3 (de) * | 1971-07-29 | 1978-05-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterlaser |
DE2165539C3 (de) * | 1971-12-30 | 1979-12-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Doppelhetero-Diodenlaser auf Halb' leiterbasis |
-
1974
- 1974-03-04 JP JP2426174A patent/JPS5248066B2/ja not_active Expired
-
1975
- 1975-02-19 FR FR7505097A patent/FR2263624B1/fr not_active Expired
- 1975-02-19 NL NL7501990.A patent/NL165891C/xx not_active IP Right Cessation
- 1975-02-20 DE DE2507357A patent/DE2507357C2/de not_active Expired
- 1975-02-20 GB GB7109/75A patent/GB1502953A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2154059A (en) * | 1984-01-25 | 1985-08-29 | Hitachi Ltd | Light emitting chip and communication apparatus using the same |
US4701927A (en) * | 1984-01-25 | 1987-10-20 | Hitachi, Ltd. | Light emitting chip and optical communication apparatus using the same |
Also Published As
Publication number | Publication date |
---|---|
FR2263624A1 (pl) | 1975-10-03 |
DE2507357C2 (de) | 1983-08-11 |
JPS50119584A (pl) | 1975-09-19 |
JPS5248066B2 (pl) | 1977-12-07 |
DE2507357A1 (de) | 1975-09-11 |
NL165891B (nl) | 1980-12-15 |
FR2263624B1 (pl) | 1982-12-17 |
NL7501990A (nl) | 1975-09-08 |
NL165891C (nl) | 1981-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19950219 |