GB1498925A - Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured - Google Patents
Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufacturedInfo
- Publication number
- GB1498925A GB1498925A GB4367/76A GB436776A GB1498925A GB 1498925 A GB1498925 A GB 1498925A GB 4367/76 A GB4367/76 A GB 4367/76A GB 436776 A GB436776 A GB 436776A GB 1498925 A GB1498925 A GB 1498925A
- Authority
- GB
- United Kingdom
- Prior art keywords
- strips
- silicon
- substrate
- support
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 7
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000463 material Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 7
- 229910052710 silicon Inorganic materials 0.000 abstract 7
- 239000010703 silicon Substances 0.000 abstract 7
- 230000006698 induction Effects 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- -1 carbon fibre Chemical compound 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000000835 fiber Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7503926A FR2299893A1 (fr) | 1975-02-07 | 1975-02-07 | Procede de fabrication en continu de silicium |
| FR7529556A FR2325403A2 (fr) | 1975-09-26 | 1975-09-26 | Procede de fabrication en continu de silicium polycristallin en bande sur un support solide, dispositif de mise en oeuvre et silicium ainsi obtenu |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1498925A true GB1498925A (en) | 1978-01-25 |
Family
ID=26218724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4367/76A Expired GB1498925A (en) | 1975-02-07 | 1976-02-04 | Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5339741B2 (enExample) |
| CA (1) | CA1047655A (enExample) |
| DE (1) | DE2604351C3 (enExample) |
| GB (1) | GB1498925A (enExample) |
| IT (1) | IT1055104B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010028103A3 (en) * | 2008-09-03 | 2010-06-03 | Evergreen Solar, Inc. | String ribbon crystal and method to grow them using strings with refractory metal core |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2401696A1 (fr) * | 1977-08-31 | 1979-03-30 | Ugine Kuhlmann | Methode de depot de silicium cristallin en films minces sur substrats graphites |
| CA1169336A (en) * | 1980-01-07 | 1984-06-19 | Emanuel M. Sachs | String stabilized ribbon growth method and apparatus |
| DE3231326A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen |
| DE3231267A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
| DE3231268A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
| DE3240245A1 (de) * | 1982-10-29 | 1984-05-03 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von bandfoermigen siliziumkoerpern fuer solarzellen |
| DE3306135A1 (de) * | 1983-02-22 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum herstellen von polykirstallinen, grossflaechigen siliziumkristallkoerpern fuer solarzellen |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1343740A (fr) * | 1962-10-12 | 1963-11-22 | Electronique & Physique | Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames |
| US3335038A (en) * | 1964-03-30 | 1967-08-08 | Ibm | Methods of producing single crystals on polycrystalline substrates and devices using same |
| US3741825A (en) * | 1971-07-08 | 1973-06-26 | Rca Corp | Method of depositing an epitaxial semiconductor layer from the liquidphase |
-
1976
- 1976-02-04 IT IT7619901A patent/IT1055104B/it active
- 1976-02-04 GB GB4367/76A patent/GB1498925A/en not_active Expired
- 1976-02-05 DE DE2604351A patent/DE2604351C3/de not_active Expired
- 1976-02-07 JP JP1274976A patent/JPS5339741B2/ja not_active Expired
- 1976-02-09 CA CA245,318A patent/CA1047655A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010028103A3 (en) * | 2008-09-03 | 2010-06-03 | Evergreen Solar, Inc. | String ribbon crystal and method to grow them using strings with refractory metal core |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5339741B2 (enExample) | 1978-10-23 |
| DE2604351C3 (de) | 1981-08-13 |
| CA1047655A (en) | 1979-01-30 |
| DE2604351B2 (de) | 1980-12-11 |
| DE2604351A1 (de) | 1976-08-19 |
| IT1055104B (it) | 1981-12-21 |
| JPS51104257A (enExample) | 1976-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4027053A (en) | Method of producing polycrystalline silicon ribbon | |
| JPS54119193A (en) | Method of producing curved supporting surface to continuous traverse direction element row disposed on driving belt | |
| ES8100356A1 (es) | Procedimiento e instalacion para depositar en continuo sobre la superficie de un sustrato llevado a alta temperatura una capa de una materia solida | |
| FR2518429B1 (fr) | Installation pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide | |
| GB1498925A (en) | Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured | |
| JPS6466929A (en) | Method of forming defect-free single crystal thin layer of semiconductor material | |
| GB1517445A (en) | Panel of anisotropic glass ceramic and method for its manufacture | |
| GB1452546A (en) | Growing epitaxial layers | |
| JPS5496386A (en) | Manufacture of buried optical semiconductor device | |
| FR2510986B1 (fr) | Procede de cuisson d'ebauches et de fabrication de matiere refractaire liee par du nitrure de silicium | |
| FR2543581B1 (fr) | Procede pour former une couche d'oxyde sur la surface d'un substrat en materiau semiconducteur | |
| JPS53146299A (en) | Production of silicon carbide substrate | |
| JPS55104998A (en) | Production of silicon carbide crystal layer | |
| JPS63186775U (enExample) | ||
| JPS57196522A (en) | Manufacture of semiconductor device | |
| JPS6441212A (en) | Semiconductor crystal growth method | |
| JPS51111057A (en) | Crystal growing device | |
| JPS5710922A (en) | Sliding type liquid phase epitaxial growth device | |
| JPS5345187A (en) | Wafer production of oxide piezoelectric material | |
| DE1444525B2 (de) | Verfahren zum herstellen einer halbleiteranordnung | |
| JPS57196798A (en) | Manufacturing apparatus for beltlike silicon crystal | |
| JPS54106166A (en) | Manufacture of semiconductor device | |
| JPS5373A (en) | Vapor growing method for semiconductor single crystal | |
| JPS57118099A (en) | Liquid phase epitaxial growing apparatus for crystal | |
| JPS533902A (en) | Production of silicon crystal membrane |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |