FR2299893A1 - Procede de fabrication en continu de silicium - Google Patents

Procede de fabrication en continu de silicium

Info

Publication number
FR2299893A1
FR2299893A1 FR7503926A FR7503926A FR2299893A1 FR 2299893 A1 FR2299893 A1 FR 2299893A1 FR 7503926 A FR7503926 A FR 7503926A FR 7503926 A FR7503926 A FR 7503926A FR 2299893 A1 FR2299893 A1 FR 2299893A1
Authority
FR
France
Prior art keywords
devices
material layer
main surface
production method
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7503926A
Other languages
English (en)
Other versions
FR2299893B1 (fr
Inventor
Jean-Jacques Brissot
Christian Belouet
Rene Martres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7503926A priority Critical patent/FR2299893A1/fr
Priority to IT7619901A priority patent/IT1055104B/it
Priority to GB4367/76A priority patent/GB1498925A/en
Priority to DE2604351A priority patent/DE2604351C3/de
Priority to JP1274976A priority patent/JPS5339741B2/ja
Priority to CA245,318A priority patent/CA1047655A/fr
Publication of FR2299893A1 publication Critical patent/FR2299893A1/fr
Priority to US05/816,387 priority patent/US4119744A/en
Application granted granted Critical
Publication of FR2299893B1 publication Critical patent/FR2299893B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7503926A 1975-02-07 1975-02-07 Procede de fabrication en continu de silicium Granted FR2299893A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7503926A FR2299893A1 (fr) 1975-02-07 1975-02-07 Procede de fabrication en continu de silicium
IT7619901A IT1055104B (it) 1975-02-07 1976-02-04 Metodo di fabbricazione di dispositivi semiconduttori comportante la formazione di uno strato di materiale semiconduuttore su di un substrato apparato per l'attuazione di tale metodo e dispositivo semiconduttore fabbricato con l'ausilio di detto metodo
GB4367/76A GB1498925A (en) 1975-02-07 1976-02-04 Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured
DE2604351A DE2604351C3 (de) 1975-02-07 1976-02-05 Verfahren zur Herstellung von Halbleiteranordnungen, bei dem eine Siliciumschicht auf einem Substrat angebracht wird
JP1274976A JPS5339741B2 (fr) 1975-02-07 1976-02-07
CA245,318A CA1047655A (fr) 1975-02-07 1976-02-09 Fabrication de semiconducteurs en couches minces a partir de la phase liquide
US05/816,387 US4119744A (en) 1975-02-07 1977-07-18 Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7503926A FR2299893A1 (fr) 1975-02-07 1975-02-07 Procede de fabrication en continu de silicium

Publications (2)

Publication Number Publication Date
FR2299893A1 true FR2299893A1 (fr) 1976-09-03
FR2299893B1 FR2299893B1 (fr) 1977-09-30

Family

ID=9150942

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7503926A Granted FR2299893A1 (fr) 1975-02-07 1975-02-07 Procede de fabrication en continu de silicium

Country Status (1)

Country Link
FR (1) FR2299893A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0364988A2 (fr) * 1988-10-19 1990-04-25 Nkk Corporation Procédé pour revêtir des plaques métalliques

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0364988A2 (fr) * 1988-10-19 1990-04-25 Nkk Corporation Procédé pour revêtir des plaques métalliques
EP0364988A3 (fr) * 1988-10-19 1991-07-10 Nkk Corporation Procédé pour revêtir des plaques métalliques

Also Published As

Publication number Publication date
FR2299893B1 (fr) 1977-09-30

Similar Documents

Publication Publication Date Title
JPS5346274A (en) Method of forming epitaxial layer on substrate surface
JPS51123562A (en) Production method of semiconductor device
ES275957A1 (es) Método y aparato para la producción de vidrio plano en forma de cinta
JPS5232270A (en) Passivation film formaion by sputtering
FR2299893A1 (fr) Procede de fabrication en continu de silicium
FR2325403A2 (fr) Procede de fabrication en continu de silicium polycristallin en bande sur un support solide, dispositif de mise en oeuvre et silicium ainsi obtenu
IT1143690B (it) Procedimento per produrre su un substrato uno strato dotato di struttura nella tecnologia dei semiconduttori
JPS5241654A (en) Formation of roughened coating layer by electro-phoresis and coating c omposition for the same
JPS5683823A (en) Production for horizontal thin film magnetic head
ES486485A1 (es) Procedimiento para el tratamiento superficial de material ceramico
JPS5228879A (en) Semiconductor device and method for its production
ES440152A1 (es) Mejoras introducidas en un aparato para la fabricacion de vidrio.
FR2324123A1 (fr) Procede de realisation d'un reseau de bandelettes metalliques sur un materiau semiconducteur, notamment sur un compose iii-v
JPS5214359A (en) Process for sealing of the semiconductor and lead-frame used in this method
JPS5218169A (en) Production method of semiconductor
JPS5231665A (en) Growing method of semiconductor crystal
JPS5223265A (en) Method of processing semiconductor materials
JPS5269561A (en) Electrode of semiconductor device
JPS52117549A (en) Film thickness control method for semiconductor film substance
JPS5441673A (en) Semiconductor device and its manufacture
Sutton et al. Influence of hafnium on the wetting characteristics of MAR M-200
JPS52115181A (en) Sealing method for semiconductor devices
JPS51120690A (en) Manufacturing method for semiconductor apparatus
JPS539489A (en) Production of semiconductor device
JPS5753120A (en) Production of adhesive substrate for precise lapping of thin material

Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse