JPS51104257A - - Google Patents

Info

Publication number
JPS51104257A
JPS51104257A JP51012749A JP1274976A JPS51104257A JP S51104257 A JPS51104257 A JP S51104257A JP 51012749 A JP51012749 A JP 51012749A JP 1274976 A JP1274976 A JP 1274976A JP S51104257 A JPS51104257 A JP S51104257A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51012749A
Other languages
Japanese (ja)
Other versions
JPS5339741B2 (enExample
Inventor
Jatsuku Rushian Emiiru Bur Jan
Burue Kurisuchan
Marutoru Rune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7503926A external-priority patent/FR2299893A1/fr
Priority claimed from FR7529556A external-priority patent/FR2325403A2/fr
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS51104257A publication Critical patent/JPS51104257A/ja
Publication of JPS5339741B2 publication Critical patent/JPS5339741B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1274976A 1975-02-07 1976-02-07 Expired JPS5339741B2 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7503926A FR2299893A1 (fr) 1975-02-07 1975-02-07 Procede de fabrication en continu de silicium
FR7529556A FR2325403A2 (fr) 1975-09-26 1975-09-26 Procede de fabrication en continu de silicium polycristallin en bande sur un support solide, dispositif de mise en oeuvre et silicium ainsi obtenu

Publications (2)

Publication Number Publication Date
JPS51104257A true JPS51104257A (enExample) 1976-09-14
JPS5339741B2 JPS5339741B2 (enExample) 1978-10-23

Family

ID=26218724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1274976A Expired JPS5339741B2 (enExample) 1975-02-07 1976-02-07

Country Status (5)

Country Link
JP (1) JPS5339741B2 (enExample)
CA (1) CA1047655A (enExample)
DE (1) DE2604351C3 (enExample)
GB (1) GB1498925A (enExample)
IT (1) IT1055104B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
DE3231268A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3231267A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3240245A1 (de) * 1982-10-29 1984-05-03 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von bandfoermigen siliziumkoerpern fuer solarzellen
DE3306135A1 (de) * 1983-02-22 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von polykirstallinen, grossflaechigen siliziumkristallkoerpern fuer solarzellen
WO2010028103A2 (en) * 2008-09-03 2010-03-11 Evergreen Solar, Inc. String with refractory metal core for string ribbon crystal growth

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1343740A (fr) * 1962-10-12 1963-11-22 Electronique & Physique Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase

Also Published As

Publication number Publication date
CA1047655A (en) 1979-01-30
DE2604351B2 (de) 1980-12-11
DE2604351A1 (de) 1976-08-19
GB1498925A (en) 1978-01-25
IT1055104B (it) 1981-12-21
JPS5339741B2 (enExample) 1978-10-23
DE2604351C3 (de) 1981-08-13

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