GB1490481A - Particle implantation - Google Patents

Particle implantation

Info

Publication number
GB1490481A
GB1490481A GB1157/76A GB115776A GB1490481A GB 1490481 A GB1490481 A GB 1490481A GB 1157/76 A GB1157/76 A GB 1157/76A GB 115776 A GB115776 A GB 115776A GB 1490481 A GB1490481 A GB 1490481A
Authority
GB
United Kingdom
Prior art keywords
angle
shaft
particles
plate
specimens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1157/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1490481A publication Critical patent/GB1490481A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
GB1157/76A 1975-01-22 1976-01-13 Particle implantation Expired GB1490481A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7501942A FR2298880A1 (fr) 1975-01-22 1975-01-22 Procede et dispositif d'implantation ionique

Publications (1)

Publication Number Publication Date
GB1490481A true GB1490481A (en) 1977-11-02

Family

ID=9150153

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1157/76A Expired GB1490481A (en) 1975-01-22 1976-01-13 Particle implantation

Country Status (3)

Country Link
US (1) US4035655A (enExample)
FR (1) FR2298880A1 (enExample)
GB (1) GB1490481A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2191335A (en) * 1986-05-29 1987-12-09 Mitsubishi Electric Corp Substrate support structure for ion implantation device
GB2389958A (en) * 2002-06-21 2003-12-24 Applied Materials Inc Multi directional mechanical scanning in an ion implanter

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643893C3 (de) * 1976-09-29 1981-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer mit einer Struktur versehenen Schicht auf einem Substrat
FR2383702A1 (fr) * 1977-03-18 1978-10-13 Anvar Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
FR2475069A1 (fr) * 1980-02-01 1981-08-07 Commissariat Energie Atomique Procede de dopage rapide de semi-conducteurs
US4405864A (en) * 1981-09-08 1983-09-20 Rca Corporation Ion implanter end processing station
FR2529383A1 (fr) * 1982-06-24 1983-12-30 Commissariat Energie Atomique Porte-cible a balayage mecanique utilisable notamment pour l'implantation d'ioris
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4733091A (en) * 1984-09-19 1988-03-22 Applied Materials, Inc. Systems and methods for ion implantation of semiconductor wafers
US4745287A (en) * 1986-10-23 1988-05-17 Ionex/Hei Ion implantation with variable implant angle
EP0362418A1 (en) * 1988-10-03 1990-04-11 International Business Machines Corporation Improved method and system for the angled exposition of a surface portion to an emission impinging obliquely thereon, and semiconductor wafers having facets exposed according to said method
US4899059A (en) * 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US5907220A (en) 1996-03-13 1999-05-25 Applied Materials, Inc. Magnetron for low pressure full face erosion
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6010579A (en) 1997-05-12 2000-01-04 Silicon Genesis Corporation Reusable substrate for thin film separation
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6791094B1 (en) * 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
WO2001011930A2 (en) 1999-08-10 2001-02-15 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
JP6588323B2 (ja) * 2015-12-10 2019-10-09 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
GB1280013A (en) * 1969-09-05 1972-07-05 Atomic Energy Authority Uk Improvements in or relating to apparatus bombarding a target with ions
US3778628A (en) * 1971-08-02 1973-12-11 Ardac Inc Secondary detection circuit with sharp cutoff for security validating

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2191335A (en) * 1986-05-29 1987-12-09 Mitsubishi Electric Corp Substrate support structure for ion implantation device
US4794305A (en) * 1986-05-29 1988-12-27 Mitsubishi Denki Kabushiki Kaisha Substrate support structure for ion implantation device
GB2191335B (en) * 1986-05-29 1990-11-21 Mitsubishi Electric Corp Substrate support structure for ion implantation device
GB2389958A (en) * 2002-06-21 2003-12-24 Applied Materials Inc Multi directional mechanical scanning in an ion implanter
GB2389958B (en) * 2002-06-21 2005-09-07 Applied Materials Inc Multi directional mechanical scanning in an ion implanter
US7105838B2 (en) 2002-06-21 2006-09-12 Applied Materials, Inc. Multi directional mechanical scanning in an ion implanter

Also Published As

Publication number Publication date
US4035655A (en) 1977-07-12
FR2298880B1 (enExample) 1978-02-03
FR2298880A1 (fr) 1976-08-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee