GB1483746A - Processing of wafers - Google Patents

Processing of wafers

Info

Publication number
GB1483746A
GB1483746A GB54707/74A GB5470774A GB1483746A GB 1483746 A GB1483746 A GB 1483746A GB 54707/74 A GB54707/74 A GB 54707/74A GB 5470774 A GB5470774 A GB 5470774A GB 1483746 A GB1483746 A GB 1483746A
Authority
GB
United Kingdom
Prior art keywords
wafers
etching
dec
rods
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB54707/74A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of GB1483746A publication Critical patent/GB1483746A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P72/0426—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
GB54707/74A 1973-12-19 1974-12-18 Processing of wafers Expired GB1483746A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42638773A 1973-12-19 1973-12-19

Publications (1)

Publication Number Publication Date
GB1483746A true GB1483746A (en) 1977-08-24

Family

ID=23690593

Family Applications (1)

Application Number Title Priority Date Filing Date
GB54707/74A Expired GB1483746A (en) 1973-12-19 1974-12-18 Processing of wafers

Country Status (5)

Country Link
JP (1) JPS5093775A (OSRAM)
BE (1) BE823525A (OSRAM)
CA (1) CA1027465A (OSRAM)
DE (1) DE2459892A1 (OSRAM)
GB (1) GB1483746A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2142283A (en) * 1983-06-27 1985-01-16 Psi Star Inc Liquid etching
GB2313811A (en) * 1996-06-05 1997-12-10 Samsung Electronics Co Ltd Wafer overflow etching bath having outlet holes in sidewalls
CN113793819A (zh) * 2021-09-16 2021-12-14 长江存储科技有限责任公司 化学槽及其温度控制方法
CN115241330A (zh) * 2022-09-19 2022-10-25 英利能源发展(天津)有限公司 一种氢氟酸刻蚀太阳能电池用半导体硅片装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2326479A1 (fr) * 1975-10-03 1977-04-29 Radiotechnique Compelec Procede de decapage de plaquettes semi-conductrices, notamment pour cellules solaires et appareillage de mise en oeuvre du procede
JPS5288967U (OSRAM) * 1975-12-26 1977-07-02
JPS5721321Y2 (OSRAM) * 1975-12-26 1982-05-08
JPS5619933Y2 (OSRAM) * 1978-01-10 1981-05-12
JPS5617021A (en) * 1979-07-20 1981-02-18 Fujitsu Ltd Surface treatment of substrate
JPS5729140U (OSRAM) * 1980-07-24 1982-02-16
JPS6327784Y2 (OSRAM) * 1980-09-19 1988-07-27
US5278104A (en) * 1989-07-25 1994-01-11 Kabushiki Kaisha Toshiba Semiconductor wafer carrier having a dust cover
JPH0770505B2 (ja) * 1989-07-25 1995-07-31 株式会社東芝 半導体装置支持キャリヤ
US5054519A (en) * 1990-12-26 1991-10-08 Imtec Products, Inc. Recirculating chemical bath with inflow and self balancing outflow
KR20110008068A (ko) * 2008-03-31 2011-01-25 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 실리콘 웨이퍼의 엣지 에칭 방법
KR20110099108A (ko) * 2008-11-19 2011-09-06 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 반도체 웨이퍼의 에지를 스트리핑하기 위한 방법 및 시스템

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2142283A (en) * 1983-06-27 1985-01-16 Psi Star Inc Liquid etching
GB2313811A (en) * 1996-06-05 1997-12-10 Samsung Electronics Co Ltd Wafer overflow etching bath having outlet holes in sidewalls
GB2313811B (en) * 1996-06-05 2000-09-20 Samsung Electronics Co Ltd A chemical bath
CN113793819A (zh) * 2021-09-16 2021-12-14 长江存储科技有限责任公司 化学槽及其温度控制方法
CN115241330A (zh) * 2022-09-19 2022-10-25 英利能源发展(天津)有限公司 一种氢氟酸刻蚀太阳能电池用半导体硅片装置

Also Published As

Publication number Publication date
JPS5093775A (OSRAM) 1975-07-26
DE2459892A1 (de) 1975-09-04
CA1027465A (en) 1978-03-07
BE823525A (fr) 1975-06-18

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee