GB1470683A - Variable impedance circuits comprising a field effect transistor - Google Patents

Variable impedance circuits comprising a field effect transistor

Info

Publication number
GB1470683A
GB1470683A GB1459674A GB1459674A GB1470683A GB 1470683 A GB1470683 A GB 1470683A GB 1459674 A GB1459674 A GB 1459674A GB 1459674 A GB1459674 A GB 1459674A GB 1470683 A GB1470683 A GB 1470683A
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
drain electrodes
variable impedance
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1459674A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1470683A publication Critical patent/GB1470683A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
GB1459674A 1973-04-06 1974-04-02 Variable impedance circuits comprising a field effect transistor Expired GB1470683A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3920873A JPS552741B2 (enrdf_load_stackoverflow) 1973-04-06 1973-04-06

Publications (1)

Publication Number Publication Date
GB1470683A true GB1470683A (en) 1977-04-21

Family

ID=12546703

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1459674A Expired GB1470683A (en) 1973-04-06 1974-04-02 Variable impedance circuits comprising a field effect transistor

Country Status (7)

Country Link
JP (1) JPS552741B2 (enrdf_load_stackoverflow)
CA (1) CA1001724A (enrdf_load_stackoverflow)
DE (1) DE2416883A1 (enrdf_load_stackoverflow)
FR (1) FR2224877B1 (enrdf_load_stackoverflow)
GB (1) GB1470683A (enrdf_load_stackoverflow)
IT (1) IT1010898B (enrdf_load_stackoverflow)
NL (1) NL7404785A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001047117A1 (en) 1999-12-22 2001-06-28 Texas Advanced Optoelectronics Solutions, Inc. High sheet mos resistor method and apparatus
CN117613037A (zh) * 2023-11-01 2024-02-27 珠海市杰理科技股份有限公司 一种集成电路、芯片及电子设备

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158807A (en) * 1977-04-25 1979-06-19 Massachusetts Institute Of Technology Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
JPS58183338A (ja) * 1982-04-20 1983-10-26 Koki Hisamatsu ジヤツキ装備車
JPS59167054U (ja) * 1983-04-23 1984-11-08 田川　きよ 自動車事故防止装置
US4602170A (en) * 1983-09-08 1986-07-22 International Business Machines Corporation Resistive gate field effect transistor logic family
JPS61238549A (ja) * 1985-04-15 1986-10-23 Tadanao Fujimori オ−トジヤツキ車とその使用法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001047117A1 (en) 1999-12-22 2001-06-28 Texas Advanced Optoelectronics Solutions, Inc. High sheet mos resistor method and apparatus
EP1262020A4 (en) * 1999-12-22 2007-07-18 Texas Advanced Optoelectronics METHOD AND APPARATUS FOR HIGH-LAYER MOS RESISTANCE
CN117613037A (zh) * 2023-11-01 2024-02-27 珠海市杰理科技股份有限公司 一种集成电路、芯片及电子设备
CN117613037B (zh) * 2023-11-01 2025-02-21 珠海市杰理科技股份有限公司 一种集成电路、芯片及电子设备

Also Published As

Publication number Publication date
JPS49127583A (enrdf_load_stackoverflow) 1974-12-06
FR2224877B1 (enrdf_load_stackoverflow) 1978-03-24
CA1001724A (en) 1976-12-14
IT1010898B (it) 1977-01-20
NL7404785A (enrdf_load_stackoverflow) 1974-10-08
FR2224877A1 (enrdf_load_stackoverflow) 1974-10-31
DE2416883A1 (de) 1974-10-17
JPS552741B2 (enrdf_load_stackoverflow) 1980-01-22

Similar Documents

Publication Publication Date Title
GB1396198A (en) Transistors
GB1396673A (en) Stabilizing fet devices
IE35096B1 (en) Improvements in or relating to semiconductor devices
GB1519361A (en) Semiconductor devices
GB1502905A (en) Field effect transistor amplifiers
GB1077793A (en) Electronic circuits having field-effect transistors
GB1520067A (en) Negative resistance device
GB1316554A (en) High frequency field-effect transistor
GB1139749A (en) Improvements in or relating to semiconductor devices
GB1470683A (en) Variable impedance circuits comprising a field effect transistor
GB1159937A (en) Improvements in or relating to Semiconductor Devices.
GB1383981A (en) Electrically alterable floating gate device and method for altering same
GB1274986A (en) Method of forming an oxide layer on a silicon substrate
GB1471282A (en) Field effect semiconductor devices
KR930018754A (ko) 반도체 장치
JPS5691466A (en) Selective writing possible semiconductor element
JPS55121682A (en) Field effect transistor
GB1360578A (en) Semiconductor integrated circuits
JPS5275187A (en) Mos type semiconductor device
GB1039416A (en) Electronic signal translating circuits
GB1431199A (en) Variable impedance circuits
GB1481724A (en) Field effect transistors
EP0436038A4 (en) Semiconductor device and method of producing the same
JPS5773965A (en) Switched capcitor integrator
JPS5615079A (en) Insulated gate field effect transistor couple

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19940401