JPS552741B2 - - Google Patents

Info

Publication number
JPS552741B2
JPS552741B2 JP3920873A JP3920873A JPS552741B2 JP S552741 B2 JPS552741 B2 JP S552741B2 JP 3920873 A JP3920873 A JP 3920873A JP 3920873 A JP3920873 A JP 3920873A JP S552741 B2 JPS552741 B2 JP S552741B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3920873A
Other languages
Japanese (ja)
Other versions
JPS49127583A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3920873A priority Critical patent/JPS552741B2/ja
Priority to GB1459674A priority patent/GB1470683A/en
Priority to IT42631/74A priority patent/IT1010898B/it
Priority to CA196,940A priority patent/CA1001724A/en
Priority to DE2416883A priority patent/DE2416883A1/de
Priority to FR7412302A priority patent/FR2224877B1/fr
Priority to NL7404785A priority patent/NL7404785A/xx
Publication of JPS49127583A publication Critical patent/JPS49127583A/ja
Publication of JPS552741B2 publication Critical patent/JPS552741B2/ja
Priority to US06/349,454 priority patent/US4490734A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP3920873A 1972-05-13 1973-04-06 Expired JPS552741B2 (enrdf_load_stackoverflow)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP3920873A JPS552741B2 (enrdf_load_stackoverflow) 1973-04-06 1973-04-06
GB1459674A GB1470683A (en) 1973-04-06 1974-04-02 Variable impedance circuits comprising a field effect transistor
IT42631/74A IT1010898B (it) 1973-04-06 1974-04-03 Circuito ad impendenza variabile impiegante un transistore ad effetto di campo ris
CA196,940A CA1001724A (en) 1973-04-06 1974-04-05 Variable impedance circuit employing an ris field effect transistor
DE2416883A DE2416883A1 (de) 1973-04-06 1974-04-06 Isolierschicht-halbleiteranordnung
FR7412302A FR2224877B1 (enrdf_load_stackoverflow) 1973-04-06 1974-04-08
NL7404785A NL7404785A (enrdf_load_stackoverflow) 1973-04-06 1974-04-08
US06/349,454 US4490734A (en) 1972-05-13 1982-02-17 Variable impedance circuit employing an RIS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3920873A JPS552741B2 (enrdf_load_stackoverflow) 1973-04-06 1973-04-06

Publications (2)

Publication Number Publication Date
JPS49127583A JPS49127583A (enrdf_load_stackoverflow) 1974-12-06
JPS552741B2 true JPS552741B2 (enrdf_load_stackoverflow) 1980-01-22

Family

ID=12546703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3920873A Expired JPS552741B2 (enrdf_load_stackoverflow) 1972-05-13 1973-04-06

Country Status (7)

Country Link
JP (1) JPS552741B2 (enrdf_load_stackoverflow)
CA (1) CA1001724A (enrdf_load_stackoverflow)
DE (1) DE2416883A1 (enrdf_load_stackoverflow)
FR (1) FR2224877B1 (enrdf_load_stackoverflow)
GB (1) GB1470683A (enrdf_load_stackoverflow)
IT (1) IT1010898B (enrdf_load_stackoverflow)
NL (1) NL7404785A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58183338A (ja) * 1982-04-20 1983-10-26 Koki Hisamatsu ジヤツキ装備車
JPS59167054U (ja) * 1983-04-23 1984-11-08 田川　きよ 自動車事故防止装置
JPS61238549A (ja) * 1985-04-15 1986-10-23 Tadanao Fujimori オ−トジヤツキ車とその使用法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158807A (en) * 1977-04-25 1979-06-19 Massachusetts Institute Of Technology Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
US4602170A (en) * 1983-09-08 1986-07-22 International Business Machines Corporation Resistive gate field effect transistor logic family
US6703682B2 (en) * 1999-12-22 2004-03-09 Texas Advanced Optoelectronic Solutions, Inc. High sheet MOS resistor method and apparatus
CN117613037B (zh) * 2023-11-01 2025-02-21 珠海市杰理科技股份有限公司 一种集成电路、芯片及电子设备

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58183338A (ja) * 1982-04-20 1983-10-26 Koki Hisamatsu ジヤツキ装備車
JPS59167054U (ja) * 1983-04-23 1984-11-08 田川　きよ 自動車事故防止装置
JPS61238549A (ja) * 1985-04-15 1986-10-23 Tadanao Fujimori オ−トジヤツキ車とその使用法

Also Published As

Publication number Publication date
JPS49127583A (enrdf_load_stackoverflow) 1974-12-06
FR2224877B1 (enrdf_load_stackoverflow) 1978-03-24
CA1001724A (en) 1976-12-14
IT1010898B (it) 1977-01-20
GB1470683A (en) 1977-04-21
NL7404785A (enrdf_load_stackoverflow) 1974-10-08
FR2224877A1 (enrdf_load_stackoverflow) 1974-10-31
DE2416883A1 (de) 1974-10-17

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