IT1010898B - Circuito ad impendenza variabile impiegante un transistore ad effetto di campo ris - Google Patents

Circuito ad impendenza variabile impiegante un transistore ad effetto di campo ris

Info

Publication number
IT1010898B
IT1010898B IT42631/74A IT4263174A IT1010898B IT 1010898 B IT1010898 B IT 1010898B IT 42631/74 A IT42631/74 A IT 42631/74A IT 4263174 A IT4263174 A IT 4263174A IT 1010898 B IT1010898 B IT 1010898B
Authority
IT
Italy
Prior art keywords
impendance
res
variable
circuit
field effect
Prior art date
Application number
IT42631/74A
Other languages
English (en)
Italian (it)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1010898B publication Critical patent/IT1010898B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
IT42631/74A 1973-04-06 1974-04-03 Circuito ad impendenza variabile impiegante un transistore ad effetto di campo ris IT1010898B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3920873A JPS552741B2 (enrdf_load_stackoverflow) 1973-04-06 1973-04-06

Publications (1)

Publication Number Publication Date
IT1010898B true IT1010898B (it) 1977-01-20

Family

ID=12546703

Family Applications (1)

Application Number Title Priority Date Filing Date
IT42631/74A IT1010898B (it) 1973-04-06 1974-04-03 Circuito ad impendenza variabile impiegante un transistore ad effetto di campo ris

Country Status (7)

Country Link
JP (1) JPS552741B2 (enrdf_load_stackoverflow)
CA (1) CA1001724A (enrdf_load_stackoverflow)
DE (1) DE2416883A1 (enrdf_load_stackoverflow)
FR (1) FR2224877B1 (enrdf_load_stackoverflow)
GB (1) GB1470683A (enrdf_load_stackoverflow)
IT (1) IT1010898B (enrdf_load_stackoverflow)
NL (1) NL7404785A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158807A (en) * 1977-04-25 1979-06-19 Massachusetts Institute Of Technology Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
JPS58183338A (ja) * 1982-04-20 1983-10-26 Koki Hisamatsu ジヤツキ装備車
JPS59167054U (ja) * 1983-04-23 1984-11-08 田川　きよ 自動車事故防止装置
US4602170A (en) * 1983-09-08 1986-07-22 International Business Machines Corporation Resistive gate field effect transistor logic family
JPS61238549A (ja) * 1985-04-15 1986-10-23 Tadanao Fujimori オ−トジヤツキ車とその使用法
US6703682B2 (en) * 1999-12-22 2004-03-09 Texas Advanced Optoelectronic Solutions, Inc. High sheet MOS resistor method and apparatus
CN117613037B (zh) * 2023-11-01 2025-02-21 珠海市杰理科技股份有限公司 一种集成电路、芯片及电子设备

Also Published As

Publication number Publication date
JPS49127583A (enrdf_load_stackoverflow) 1974-12-06
FR2224877B1 (enrdf_load_stackoverflow) 1978-03-24
CA1001724A (en) 1976-12-14
GB1470683A (en) 1977-04-21
NL7404785A (enrdf_load_stackoverflow) 1974-10-08
FR2224877A1 (enrdf_load_stackoverflow) 1974-10-31
DE2416883A1 (de) 1974-10-17
JPS552741B2 (enrdf_load_stackoverflow) 1980-01-22

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