GB1470020A - Amplifying integrated circuit constructed in accordance with the mosfet technology - Google Patents

Amplifying integrated circuit constructed in accordance with the mosfet technology

Info

Publication number
GB1470020A
GB1470020A GB178275A GB178275A GB1470020A GB 1470020 A GB1470020 A GB 1470020A GB 178275 A GB178275 A GB 178275A GB 178275 A GB178275 A GB 178275A GB 1470020 A GB1470020 A GB 1470020A
Authority
GB
United Kingdom
Prior art keywords
zones
fet
amplifier
integrated circuit
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB178275A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1470020A publication Critical patent/GB1470020A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2935—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using ionisation detectors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB178275A 1974-01-25 1975-01-15 Amplifying integrated circuit constructed in accordance with the mosfet technology Expired GB1470020A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7402589A FR2259486B1 (cg-RX-API-DMAC10.html) 1974-01-25 1974-01-25

Publications (1)

Publication Number Publication Date
GB1470020A true GB1470020A (en) 1977-04-14

Family

ID=9134019

Family Applications (1)

Application Number Title Priority Date Filing Date
GB178275A Expired GB1470020A (en) 1974-01-25 1975-01-15 Amplifying integrated circuit constructed in accordance with the mosfet technology

Country Status (5)

Country Link
US (1) US3967208A (cg-RX-API-DMAC10.html)
JP (1) JPS5946124B2 (cg-RX-API-DMAC10.html)
DE (1) DE2502721C2 (cg-RX-API-DMAC10.html)
FR (1) FR2259486B1 (cg-RX-API-DMAC10.html)
GB (1) GB1470020A (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS588767B2 (ja) * 1977-12-07 1983-02-17 株式会社東芝 リニア増幅回路
US4302622A (en) * 1980-12-02 1981-11-24 Mobil Oil Corporation Shape selective reactions utilizing group III a metal-modified zeolite catalyst
JPS57141107A (en) * 1981-02-26 1982-09-01 Nec Corp Wide-band negative feedback amplifying circuit
US4716380A (en) * 1982-09-30 1987-12-29 Thomson Components-Mostek Corporation FET differential amplifier
IT1208875B (it) * 1987-04-17 1989-07-10 Cselt Centro Studi Lab Telecom Circuito per il controllo automatico del prodotto guadagno banda di amplificatori operazionali

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3265981A (en) * 1963-12-02 1966-08-09 Hughes Aircraft Co Thin-film electrical networks with nonresistive feedback arrangement
US3405368A (en) * 1965-12-30 1968-10-08 Navy Usa Band-pass amplifier using field effect transistors
GB1239213A (cg-RX-API-DMAC10.html) * 1967-07-12 1971-07-14
US3516004A (en) * 1968-07-23 1970-06-02 Rca Corp Signal translating circuit comprising a plurality of igfet amplifiers cascaded in direct coupled fashion
US3747064A (en) * 1971-06-30 1973-07-17 Ibm Fet dynamic logic circuit and layout

Also Published As

Publication number Publication date
JPS50124562A (cg-RX-API-DMAC10.html) 1975-09-30
FR2259486B1 (cg-RX-API-DMAC10.html) 1978-03-31
US3967208A (en) 1976-06-29
JPS5946124B2 (ja) 1984-11-10
DE2502721C2 (de) 1983-12-01
FR2259486A1 (cg-RX-API-DMAC10.html) 1975-08-22
DE2502721A1 (de) 1975-07-31

Similar Documents

Publication Publication Date Title
JPS6420666A (en) Power mos transistor structure
GB1375355A (cg-RX-API-DMAC10.html)
EP0187697A3 (en) Balanced cmos logic circuits
KR850005160A (ko) 적층형 반도체 기억장치
GB1098468A (en) An integrated electronic circuit
GB1152394A (en) Amplifier
KR890004444A (ko) Mos트랜지스터
EP0270219A3 (en) Reduced parallel exclusive or and exclusive nor gate
TW357391B (en) Semiconductor device
ES8800789A1 (es) Perfeccionamientos en un dispositivo transistor mos
DE3579573D1 (de) Logisches gatter mit "verdrahteter" und-funktion-eingangsstufe unter verwendung von feldeffekttransistoren.
GB1302952A (cg-RX-API-DMAC10.html)
KR880009426A (ko) 반도체 메모리장치 및 그 제조방법
JPS56116669A (en) Field effect transistor
KR930018757A (ko) 화합물 반도체장치
JPS5748273A (en) P-n junction type field effect transistor
KR850007173A (ko) 분주회로
KR830009685A (ko) 초고주파, 2게이트 전계효과 트랜지스터를 사용한 아날로그 주파수 분할기
KR910020934A (ko) Tita 모스 fet제조방법 및 구조
JPS574167A (en) Junction type field-effect transistor
KR850005174A (ko) 헤테로 구조를 가진 반도체 장치
JPS5368985A (en) Junction type field effect transistor
KR910007074A (ko) 박막 트랜지스터
KR860003667A (ko) 쌍-게이트(Dual-gate)를 이용한 박막트랜지스터
GB1341334A (en) Static bipolar to mos interface circuit

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee