GB1461471A - Exposure method - Google Patents

Exposure method

Info

Publication number
GB1461471A
GB1461471A GB25274A GB25274A GB1461471A GB 1461471 A GB1461471 A GB 1461471A GB 25274 A GB25274 A GB 25274A GB 25274 A GB25274 A GB 25274A GB 1461471 A GB1461471 A GB 1461471A
Authority
GB
United Kingdom
Prior art keywords
photo
resist
mask
resist material
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of GB1461471A publication Critical patent/GB1461471A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B15/00Special procedures for taking photographs; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583Speckle reduction, e.g. coherence control or amplitude/wavefront splitting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

1461471 Off-contact printing CANON KK 3 Jan 1974 [16 Jan 1973] 00252/74 Heading G2A In the imagewise hardening of light-transmitting photo-resist material 108 on a reflective substrate of aluminium or silicon by off-contact printing through a mask original 107 using trichromatic illumination by a high-pressure mercury arc lamp 101, a standing wave having a substantially constant reduced peak value and least energy variation within the photo-resist material is produced by suitably spacing the photo-resist material from the reflective substrate by means of an intermediate light-transmitting layer 16 of silica and employing a sharp cut filter 105 which renders substantially constant the product of wavelength energy and corresponding spectral sensitivity for each illumination wave band. The mask 107 and photosensitive material 108 may be aligned by means of a view-finder 109-111 using a filter 102 which blocks sensitizing radiation. The thickness of the photo-resist and silica layers may be 1 and 0À5Á respectively. The distance between the mask and photo-resist layers may be 10Á.
GB25274A 1973-01-16 1974-01-03 Exposure method Expired GB1461471A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP720773A JPS5612011B2 (en) 1973-01-16 1973-01-16

Publications (1)

Publication Number Publication Date
GB1461471A true GB1461471A (en) 1977-01-13

Family

ID=11659554

Family Applications (2)

Application Number Title Priority Date Filing Date
GB3728276A Expired GB1461472A (en) 1973-01-16 1974-01-03 Apparatus for imagewise exposing a layer of photosensitive material
GB25274A Expired GB1461471A (en) 1973-01-16 1974-01-03 Exposure method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB3728276A Expired GB1461472A (en) 1973-01-16 1974-01-03 Apparatus for imagewise exposing a layer of photosensitive material

Country Status (4)

Country Link
JP (1) JPS5612011B2 (en)
DE (1) DE2401998C2 (en)
FR (1) FR2224787B1 (en)
GB (2) GB1461472A (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576630A (en) * 1966-10-29 1971-04-27 Nippon Electric Co Photo-etching process
DE1614636A1 (en) * 1967-09-23 1971-02-25 Siemens Ag Method for producing a photoresist mask for semiconductor purposes
CH484517A (en) * 1968-06-28 1970-01-15 Ibm Method for applying a substance to a limited surface area of a semiconductor
DE2116713B2 (en) * 1971-04-06 1974-03-28 Ibm Deutschland Gmbh, 7000 Stuttgart Exposure method for imaging very finely structured light patterns on photoresist layers and a suitable exposure device

Also Published As

Publication number Publication date
DE2401998A1 (en) 1974-07-25
GB1461472A (en) 1977-01-13
FR2224787A1 (en) 1974-10-31
DE2401998C2 (en) 1983-04-14
JPS4996675A (en) 1974-09-12
FR2224787B1 (en) 1980-01-11
JPS5612011B2 (en) 1981-03-18

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19940102