JPS5778140A - Forming method for photoresist film - Google Patents
Forming method for photoresist filmInfo
- Publication number
- JPS5778140A JPS5778140A JP15444180A JP15444180A JPS5778140A JP S5778140 A JPS5778140 A JP S5778140A JP 15444180 A JP15444180 A JP 15444180A JP 15444180 A JP15444180 A JP 15444180A JP S5778140 A JPS5778140 A JP S5778140A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- reflectivity
- minimizing
- resist
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
Abstract
PURPOSE:To improve the exposure sensitivity of a photoresist film and to minimize the machining irregularity of the line width of an extremely fine size by setting the thickness of the film to a mask blank to the thickness of minimizing the spectral reflectivity in the exposure wavelength. CONSTITUTION:A spectral reflectivity is measured in an actual exposure wavelenth in a range of coated film thickness indexed by the pinhole of the resist and the resolution to set the thickness of minimizing the reflectivity of a film. For example, a positive quinone diazide series resist is coated on a Cr mask plate of, for example, 50% of reflectivity by varying the thickness in the above range, is exposed and developed with coherent light of 436nm in wavelength and is measured in its relfectivity to conform to minimize the thickness dependability of the line width with the thickness of minimizing the reflectivity. When the thickness of the resist is set to that of minimizing the reflectivity, the exposure efficiency can be increased to improve the apparent resist sensitivity, and the irregularity of matching line width can be reduced even if there is slight irregularity in the thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15444180A JPS5778140A (en) | 1980-10-31 | 1980-10-31 | Forming method for photoresist film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15444180A JPS5778140A (en) | 1980-10-31 | 1980-10-31 | Forming method for photoresist film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5778140A true JPS5778140A (en) | 1982-05-15 |
Family
ID=15584260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15444180A Pending JPS5778140A (en) | 1980-10-31 | 1980-10-31 | Forming method for photoresist film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5778140A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115072U (en) * | 1984-06-29 | 1986-01-28 | ホ−ヤ株式会社 | Resist coating equipment |
| EP0205148A2 (en) * | 1985-06-12 | 1986-12-17 | Hitachi, Ltd. | Method of applying a resist |
| JPS63237417A (en) * | 1987-03-25 | 1988-10-03 | Nec Yamagata Ltd | Manufacture of semiconductor device |
-
1980
- 1980-10-31 JP JP15444180A patent/JPS5778140A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115072U (en) * | 1984-06-29 | 1986-01-28 | ホ−ヤ株式会社 | Resist coating equipment |
| EP0205148A2 (en) * | 1985-06-12 | 1986-12-17 | Hitachi, Ltd. | Method of applying a resist |
| EP0205148A3 (en) * | 1985-06-12 | 1988-12-28 | Hitachi, Ltd. | Method of applying a resist |
| JPS63237417A (en) * | 1987-03-25 | 1988-10-03 | Nec Yamagata Ltd | Manufacture of semiconductor device |
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