GB1458327A - Method of treating a layer of silicon dioxide - Google Patents

Method of treating a layer of silicon dioxide

Info

Publication number
GB1458327A
GB1458327A GB2060575A GB2060575A GB1458327A GB 1458327 A GB1458327 A GB 1458327A GB 2060575 A GB2060575 A GB 2060575A GB 2060575 A GB2060575 A GB 2060575A GB 1458327 A GB1458327 A GB 1458327A
Authority
GB
United Kingdom
Prior art keywords
layer
solute
dried
solution
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2060575A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1458327A publication Critical patent/GB1458327A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Insulating Materials (AREA)
GB2060575A 1974-06-06 1975-05-15 Method of treating a layer of silicon dioxide Expired GB1458327A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05476837 USB476837I5 (enrdf_load_stackoverflow) 1974-06-06 1974-06-06

Publications (1)

Publication Number Publication Date
GB1458327A true GB1458327A (en) 1976-12-15

Family

ID=23893457

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2060575A Expired GB1458327A (en) 1974-06-06 1975-05-15 Method of treating a layer of silicon dioxide

Country Status (5)

Country Link
US (1) USB476837I5 (enrdf_load_stackoverflow)
JP (1) JPS516475A (enrdf_load_stackoverflow)
DE (1) DE2524750C3 (enrdf_load_stackoverflow)
FR (1) FR2274141A1 (enrdf_load_stackoverflow)
GB (1) GB1458327A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826051A (ja) * 1981-08-06 1983-02-16 Asahi Glass Co Ltd アルカリ拡散防止酸化ケイ素膜の形成されたガラス体
DE3208087A1 (de) * 1982-03-06 1983-09-15 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Verfahren zur passivierung von halbleitern
JPS61164266A (ja) * 1985-01-16 1986-07-24 Nec Corp 耐放射線性の強化された半導体装置
DE69311184T2 (de) * 1992-03-27 1997-09-18 Matsushita Electric Ind Co Ltd Halbleitervorrichtung samt Herstellungsverfahren

Also Published As

Publication number Publication date
FR2274141A1 (fr) 1976-01-02
DE2524750C3 (de) 1979-02-22
DE2524750A1 (de) 1975-12-18
DE2524750B2 (de) 1978-06-15
JPS516475A (en) 1976-01-20
JPS5340872B2 (enrdf_load_stackoverflow) 1978-10-30
USB476837I5 (enrdf_load_stackoverflow) 1976-01-20

Similar Documents

Publication Publication Date Title
JPS5275989A (en) Production of semiconductor device
US2961354A (en) Surface treatment of semiconductive devices
GB1454237A (en) Method for manufacturing a semiconductor device
JPS5321572A (en) Production of semiconductor device
GB1458327A (en) Method of treating a layer of silicon dioxide
GB1385160A (en) Mos semiconductor structure with increased field threshold and method for making the same
GB1264879A (enrdf_load_stackoverflow)
US2201709A (en) Manufacture of alternating electric current rectifiers
JPS57177530A (en) Processing of semiconductor wafer
JPS57100768A (en) Manufacture of field effect semiconductor device
JPS5420671A (en) Production of semiconductor devices
FR2156406A1 (en) Aluminium contact layer formation - on silicon semiconductors, withuout short circuiting the devices
BR7506737A (pt) Processo para tratar corpos com um agente de ataque para remover oxido de aluminio e processo para fabricar dispositivos semicondutores
JPS5591871A (en) Manufacture of semiconductor device
JPS57199227A (en) Manufacture of semiconductor device
JPS5718366A (en) Manufacture of semiconductor device
GB1290856A (enrdf_load_stackoverflow)
JPS57167638A (en) Manufacture of semiconductor device
JPS51114875A (en) Semiconductor device manufacturing method
SU152034A1 (ru) Способ обработки р-п переходов полупроводниковых приборов
JPS5676570A (en) Manufacture of semiconductor device
JPS6482557A (en) Manufacture of capacitor
JPS6046822B2 (ja) 半導体装置の安定化処理方法およびその装置
JPS5232683A (en) Manufacturing process of semiconductor device
JPS51147250A (en) Treatment method of semiconductor substrate

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee