GB1457169A - Method for fabricating semiconductor devices using composite mask and ion implantation - Google Patents

Method for fabricating semiconductor devices using composite mask and ion implantation

Info

Publication number
GB1457169A
GB1457169A GB4261074A GB4261074A GB1457169A GB 1457169 A GB1457169 A GB 1457169A GB 4261074 A GB4261074 A GB 4261074A GB 4261074 A GB4261074 A GB 4261074A GB 1457169 A GB1457169 A GB 1457169A
Authority
GB
United Kingdom
Prior art keywords
ion implantation
semiconductor devices
semiconductor
masking layer
fabricating semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4261074A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Publication of GB1457169A publication Critical patent/GB1457169A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
GB4261074A 1973-10-26 1974-10-01 Method for fabricating semiconductor devices using composite mask and ion implantation Expired GB1457169A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US409903A US3928081A (en) 1973-10-26 1973-10-26 Method for fabricating semiconductor devices using composite mask and ion implantation

Publications (1)

Publication Number Publication Date
GB1457169A true GB1457169A (en) 1976-12-01

Family

ID=23622431

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4261074A Expired GB1457169A (en) 1973-10-26 1974-10-01 Method for fabricating semiconductor devices using composite mask and ion implantation

Country Status (7)

Country Link
US (1) US3928081A (https=)
JP (1) JPS5342663B2 (https=)
CA (1) CA1087322A (https=)
DE (1) DE2450881A1 (https=)
FR (1) FR2249435B1 (https=)
GB (1) GB1457169A (https=)
NL (1) NL7414007A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2430039A1 (fr) * 1978-06-30 1980-01-25 Trw Inc Circuit integre de multiplication
GB2117969A (en) * 1982-01-25 1983-10-19 Hitachi Ltd Method of fabricating semiconductor integrated circuit devices

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
US4153487A (en) * 1974-12-27 1979-05-08 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing intergrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
US4151019A (en) * 1974-12-27 1979-04-24 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
JPS51127682A (en) * 1975-04-30 1976-11-06 Fujitsu Ltd Manufacturing process of semiconductor device
US4018627A (en) * 1975-09-22 1977-04-19 Signetics Corporation Method for fabricating semiconductor devices utilizing oxide protective layer
USRE30282E (en) * 1976-06-28 1980-05-27 Motorola, Inc. Double master mask process for integrated circuit manufacture
US4110126A (en) * 1977-08-31 1978-08-29 International Business Machines Corporation NPN/PNP Fabrication process with improved alignment
US4219369A (en) * 1977-09-30 1980-08-26 Hitachi, Ltd. Method of making semiconductor integrated circuit device
US4244752A (en) * 1979-03-06 1981-01-13 Burroughs Corporation Single mask method of fabricating complementary integrated circuits
US4243435A (en) * 1979-06-22 1981-01-06 International Business Machines Corporation Bipolar transistor fabrication process with an ion implanted emitter
DE2945854A1 (de) * 1979-11-13 1981-05-21 Deutsche Itt Industries Gmbh, 7800 Freiburg Ionenimplantationsverfahren
JPS56135121A (en) * 1980-03-27 1981-10-22 Nec Corp Electronic integration-type flow meter with auxiliary pipe
US4335504A (en) * 1980-09-24 1982-06-22 Rockwell International Corporation Method of making CMOS devices
JPS5786718A (en) * 1980-11-19 1982-05-29 Ricoh Co Ltd Integrating flowmeter with electronic auxiliary pipe
DE3115029A1 (de) * 1981-04-14 1982-11-04 Deutsche Itt Industries Gmbh, 7800 Freiburg "verfahren zur herstellung eines integrierten bipolaren planartransistors"
EP0062725B1 (de) * 1981-04-14 1984-09-12 Deutsche ITT Industries GmbH Verfahren zum Herstellen eines integrierten Planartransistors
DE3136731A1 (de) * 1981-09-16 1983-03-31 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiteranordnung
DE3137813A1 (de) * 1981-09-23 1983-03-31 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiteranordnung
US4450021A (en) * 1982-02-22 1984-05-22 American Microsystems, Incorporated Mask diffusion process for forming Zener diode or complementary field effect transistors
JPS6353970A (ja) * 1986-08-22 1988-03-08 Sanken Electric Co Ltd 半導体装置の製造方法
JPH07120631B2 (ja) * 1988-09-06 1995-12-20 富士電機株式会社 半導体装置の製造方法
GB2237445B (en) * 1989-10-04 1994-01-12 Seagate Microelectron Ltd A semiconductor device fabrication process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1150834A (en) * 1966-10-05 1969-05-07 Rca Corp Method of fabricating semiconductor devices
DE2032838A1 (de) * 1970-07-02 1972-01-13 Licentia Gmbh Verfahren zum Herstellen einer Halb leiterzone durch Diffusion
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2430039A1 (fr) * 1978-06-30 1980-01-25 Trw Inc Circuit integre de multiplication
GB2117969A (en) * 1982-01-25 1983-10-19 Hitachi Ltd Method of fabricating semiconductor integrated circuit devices
US4469535A (en) * 1982-01-25 1984-09-04 Hitachi, Ltd. Method of fabricating semiconductor integrated circuit devices

Also Published As

Publication number Publication date
FR2249435B1 (https=) 1978-06-16
JPS5075367A (https=) 1975-06-20
CA1087322A (en) 1980-10-07
FR2249435A1 (https=) 1975-05-23
US3928081A (en) 1975-12-23
DE2450881A1 (de) 1975-04-30
NL7414007A (nl) 1975-04-29
JPS5342663B2 (https=) 1978-11-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19931001