GB1439822A - Gallium arsenide photocathodes - Google Patents
Gallium arsenide photocathodesInfo
- Publication number
- GB1439822A GB1439822A GB578273A GB578273A GB1439822A GB 1439822 A GB1439822 A GB 1439822A GB 578273 A GB578273 A GB 578273A GB 578273 A GB578273 A GB 578273A GB 1439822 A GB1439822 A GB 1439822A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gaas
- layers
- substrate
- photocathodes
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB578273A GB1439822A (en) | 1973-02-06 | 1973-02-06 | Gallium arsenide photocathodes |
NL7401016A NL7401016A (enrdf_load_stackoverflow) | 1973-02-06 | 1974-01-25 | |
DE2404016A DE2404016A1 (de) | 1973-02-06 | 1974-01-29 | Verfahren zum herstellen einer gaasfotokathode |
US438139A US3901745A (en) | 1973-02-06 | 1974-01-30 | Gallium arsenide photocathode |
FR7403410A FR2216668B1 (enrdf_load_stackoverflow) | 1973-02-06 | 1974-02-01 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB578273A GB1439822A (en) | 1973-02-06 | 1973-02-06 | Gallium arsenide photocathodes |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1439822A true GB1439822A (en) | 1976-06-16 |
Family
ID=9802520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB578273A Expired GB1439822A (en) | 1973-02-06 | 1973-02-06 | Gallium arsenide photocathodes |
Country Status (5)
Country | Link |
---|---|
US (1) | US3901745A (enrdf_load_stackoverflow) |
DE (1) | DE2404016A1 (enrdf_load_stackoverflow) |
FR (1) | FR2216668B1 (enrdf_load_stackoverflow) |
GB (1) | GB1439822A (enrdf_load_stackoverflow) |
NL (1) | NL7401016A (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3959045A (en) * | 1974-11-18 | 1976-05-25 | Varian Associates | Process for making III-V devices |
US4019082A (en) * | 1975-03-24 | 1977-04-19 | Rca Corporation | Electron emitting device and method of making the same |
US3959037A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US3959038A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US3972750A (en) * | 1975-04-30 | 1976-08-03 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US4498225A (en) * | 1981-05-06 | 1985-02-12 | The United States Of America As Represented By The Secretary Of The Army | Method of forming variable sensitivity transmission mode negative electron affinity photocathode |
US4477294A (en) * | 1981-05-06 | 1984-10-16 | The United States Of America As Represented By The Secretary Of The Army | Method of forming GaAs on Aly Ga1-y As transmission mode photocathodehode |
FR2506518A1 (fr) * | 1981-05-20 | 1982-11-26 | Labo Electronique Physique | Structure multiplicatrice d'electrons comportant un multiplicateur a galettes de microcanaux suivi d'un etage amplificateur a dynode, procede de fabrication et utilisation dans un tube photoelectrique |
DE3524765A1 (de) * | 1985-07-11 | 1987-01-22 | Licentia Gmbh | Verfahren zum herstellen einer durchsichtphotokathode |
JP2680083B2 (ja) * | 1988-12-06 | 1997-11-19 | 富士通株式会社 | 半導体基板及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3478213A (en) * | 1967-09-05 | 1969-11-11 | Rca Corp | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon |
US3575628A (en) * | 1968-11-26 | 1971-04-20 | Westinghouse Electric Corp | Transmissive photocathode and devices utilizing the same |
US3592705A (en) * | 1969-05-02 | 1971-07-13 | Sony Corp | Method of making semiconductor device |
US3631303A (en) * | 1970-01-19 | 1971-12-28 | Varian Associates | Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency |
DE2163075C2 (de) * | 1970-12-23 | 1982-03-04 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zur Herstellung von elektrolumineszierenden Halbleiterbauelementen |
-
1973
- 1973-02-06 GB GB578273A patent/GB1439822A/en not_active Expired
-
1974
- 1974-01-25 NL NL7401016A patent/NL7401016A/xx unknown
- 1974-01-29 DE DE2404016A patent/DE2404016A1/de active Pending
- 1974-01-30 US US438139A patent/US3901745A/en not_active Expired - Lifetime
- 1974-02-01 FR FR7403410A patent/FR2216668B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3901745A (en) | 1975-08-26 |
NL7401016A (enrdf_load_stackoverflow) | 1974-08-08 |
DE2404016A1 (de) | 1974-08-08 |
FR2216668B1 (enrdf_load_stackoverflow) | 1977-09-16 |
FR2216668A1 (enrdf_load_stackoverflow) | 1974-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
PCNP | Patent ceased through non-payment of renewal fee |