NL7401016A - - Google Patents

Info

Publication number
NL7401016A
NL7401016A NL7401016A NL7401016A NL7401016A NL 7401016 A NL7401016 A NL 7401016A NL 7401016 A NL7401016 A NL 7401016A NL 7401016 A NL7401016 A NL 7401016A NL 7401016 A NL7401016 A NL 7401016A
Authority
NL
Netherlands
Application number
NL7401016A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7401016A publication Critical patent/NL7401016A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Light Receiving Elements (AREA)
NL7401016A 1973-02-06 1974-01-25 NL7401016A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB578273A GB1439822A (en) 1973-02-06 1973-02-06 Gallium arsenide photocathodes

Publications (1)

Publication Number Publication Date
NL7401016A true NL7401016A (xx) 1974-08-08

Family

ID=9802520

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7401016A NL7401016A (xx) 1973-02-06 1974-01-25

Country Status (5)

Country Link
US (1) US3901745A (xx)
DE (1) DE2404016A1 (xx)
FR (1) FR2216668B1 (xx)
GB (1) GB1439822A (xx)
NL (1) NL7401016A (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959045A (en) * 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
US4019082A (en) * 1975-03-24 1977-04-19 Rca Corporation Electron emitting device and method of making the same
US3959037A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3972750A (en) * 1975-04-30 1976-08-03 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3959038A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
US4477294A (en) * 1981-05-06 1984-10-16 The United States Of America As Represented By The Secretary Of The Army Method of forming GaAs on Aly Ga1-y As transmission mode photocathodehode
FR2506518A1 (fr) * 1981-05-20 1982-11-26 Labo Electronique Physique Structure multiplicatrice d'electrons comportant un multiplicateur a galettes de microcanaux suivi d'un etage amplificateur a dynode, procede de fabrication et utilisation dans un tube photoelectrique
DE3524765A1 (de) * 1985-07-11 1987-01-22 Licentia Gmbh Verfahren zum herstellen einer durchsichtphotokathode
JP2680083B2 (ja) * 1988-12-06 1997-11-19 富士通株式会社 半導体基板及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3575628A (en) * 1968-11-26 1971-04-20 Westinghouse Electric Corp Transmissive photocathode and devices utilizing the same
US3592705A (en) * 1969-05-02 1971-07-13 Sony Corp Method of making semiconductor device
US3631303A (en) * 1970-01-19 1971-12-28 Varian Associates Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency
NL7117428A (xx) * 1970-12-23 1972-06-27

Also Published As

Publication number Publication date
US3901745A (en) 1975-08-26
FR2216668B1 (xx) 1977-09-16
FR2216668A1 (xx) 1974-08-30
GB1439822A (en) 1976-06-16
DE2404016A1 (de) 1974-08-08

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