GB1433667A - Bipolar transistors - Google Patents

Bipolar transistors

Info

Publication number
GB1433667A
GB1433667A GB930574A GB930574A GB1433667A GB 1433667 A GB1433667 A GB 1433667A GB 930574 A GB930574 A GB 930574A GB 930574 A GB930574 A GB 930574A GB 1433667 A GB1433667 A GB 1433667A
Authority
GB
United Kingdom
Prior art keywords
zone
base
transistor
base terminal
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB930574A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1433667A publication Critical patent/GB1433667A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
GB930574A 1973-04-27 1974-03-01 Bipolar transistors Expired GB1433667A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732321426 DE2321426C3 (de) 1973-04-27 1973-04-27 Bipolarer Dünnschicht-Transistor

Publications (1)

Publication Number Publication Date
GB1433667A true GB1433667A (en) 1976-04-28

Family

ID=5879480

Family Applications (1)

Application Number Title Priority Date Filing Date
GB930574A Expired GB1433667A (en) 1973-04-27 1974-03-01 Bipolar transistors

Country Status (12)

Country Link
JP (1) JPS5016480A (ja)
AT (1) AT331860B (ja)
BE (1) BE814252A (ja)
CA (1) CA1007762A (ja)
CH (1) CH567336A5 (ja)
DE (1) DE2321426C3 (ja)
DK (1) DK140818B (ja)
FR (1) FR2227644B1 (ja)
GB (1) GB1433667A (ja)
IT (1) IT1010046B (ja)
LU (1) LU69932A1 (ja)
NL (1) NL7405683A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552624A (en) * 1992-07-09 1996-09-03 France Telecom Multi-function electronic component, especially negative dynamic resistance element, and corresponding method of fabrication

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961159A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置及びその製造方法
EP0809293B1 (en) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power semiconductor structure with lateral transistor driven by vertical transistor
JP5551790B2 (ja) * 2009-12-03 2014-07-16 エプコス アクチエンゲゼルシャフト 横方向のエミッタおよびコレクタを有するバイポーラトランジスタならびに製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552624A (en) * 1992-07-09 1996-09-03 France Telecom Multi-function electronic component, especially negative dynamic resistance element, and corresponding method of fabrication

Also Published As

Publication number Publication date
DE2321426B2 (de) 1978-04-27
IT1010046B (it) 1977-01-10
JPS5016480A (ja) 1975-02-21
DK140818C (ja) 1980-04-28
BE814252A (fr) 1974-08-16
AT331860B (de) 1976-08-25
DE2321426C3 (de) 1978-12-21
CA1007762A (en) 1977-03-29
FR2227644B1 (ja) 1977-10-28
DE2321426A1 (de) 1974-11-07
DK140818B (da) 1979-11-19
NL7405683A (ja) 1974-10-29
LU69932A1 (ja) 1974-08-06
ATA264574A (de) 1975-12-15
CH567336A5 (ja) 1975-09-30
FR2227644A1 (ja) 1974-11-22

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee