IT1010046B - Transistore bipolare realizzato secondo la tecnica a film sottile - Google Patents

Transistore bipolare realizzato secondo la tecnica a film sottile

Info

Publication number
IT1010046B
IT1010046B IT2184474A IT2184474A IT1010046B IT 1010046 B IT1010046 B IT 1010046B IT 2184474 A IT2184474 A IT 2184474A IT 2184474 A IT2184474 A IT 2184474A IT 1010046 B IT1010046 B IT 1010046B
Authority
IT
Italy
Prior art keywords
thin film
bipolar transistor
made according
film technique
transistor made
Prior art date
Application number
IT2184474A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1010046B publication Critical patent/IT1010046B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
IT2184474A 1973-04-27 1974-04-24 Transistore bipolare realizzato secondo la tecnica a film sottile IT1010046B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732321426 DE2321426C3 (de) 1973-04-27 1973-04-27 Bipolarer Dünnschicht-Transistor

Publications (1)

Publication Number Publication Date
IT1010046B true IT1010046B (it) 1977-01-10

Family

ID=5879480

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2184474A IT1010046B (it) 1973-04-27 1974-04-24 Transistore bipolare realizzato secondo la tecnica a film sottile

Country Status (12)

Country Link
JP (1) JPS5016480A (it)
AT (1) AT331860B (it)
BE (1) BE814252A (it)
CA (1) CA1007762A (it)
CH (1) CH567336A5 (it)
DE (1) DE2321426C3 (it)
DK (1) DK140818B (it)
FR (1) FR2227644B1 (it)
GB (1) GB1433667A (it)
IT (1) IT1010046B (it)
LU (1) LU69932A1 (it)
NL (1) NL7405683A (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961159A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置及びその製造方法
FR2694449B1 (fr) * 1992-07-09 1994-10-28 France Telecom Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant.
EP0809293B1 (en) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power semiconductor structure with lateral transistor driven by vertical transistor
JP5551790B2 (ja) * 2009-12-03 2014-07-16 エプコス アクチエンゲゼルシャフト 横方向のエミッタおよびコレクタを有するバイポーラトランジスタならびに製造方法

Also Published As

Publication number Publication date
DE2321426B2 (de) 1978-04-27
JPS5016480A (it) 1975-02-21
DK140818C (it) 1980-04-28
BE814252A (fr) 1974-08-16
AT331860B (de) 1976-08-25
DE2321426C3 (de) 1978-12-21
CA1007762A (en) 1977-03-29
FR2227644B1 (it) 1977-10-28
DE2321426A1 (de) 1974-11-07
GB1433667A (en) 1976-04-28
DK140818B (da) 1979-11-19
NL7405683A (it) 1974-10-29
LU69932A1 (it) 1974-08-06
ATA264574A (de) 1975-12-15
CH567336A5 (it) 1975-09-30
FR2227644A1 (it) 1974-11-22

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