CA1007762A - Bipolar transistor in the thin-layer technique - Google Patents

Bipolar transistor in the thin-layer technique

Info

Publication number
CA1007762A
CA1007762A CA198,230A CA198230A CA1007762A CA 1007762 A CA1007762 A CA 1007762A CA 198230 A CA198230 A CA 198230A CA 1007762 A CA1007762 A CA 1007762A
Authority
CA
Canada
Prior art keywords
thin
bipolar transistor
layer technique
technique
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA198,230A
Other versions
CA198230S (en
Inventor
Karl Goser
Michael Pomper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1007762A publication Critical patent/CA1007762A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
CA198,230A 1973-04-27 1974-04-26 Bipolar transistor in the thin-layer technique Expired CA1007762A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732321426 DE2321426C3 (en) 1973-04-27 1973-04-27 Bipolar thin film transistor

Publications (1)

Publication Number Publication Date
CA1007762A true CA1007762A (en) 1977-03-29

Family

ID=5879480

Family Applications (1)

Application Number Title Priority Date Filing Date
CA198,230A Expired CA1007762A (en) 1973-04-27 1974-04-26 Bipolar transistor in the thin-layer technique

Country Status (12)

Country Link
JP (1) JPS5016480A (en)
AT (1) AT331860B (en)
BE (1) BE814252A (en)
CA (1) CA1007762A (en)
CH (1) CH567336A5 (en)
DE (1) DE2321426C3 (en)
DK (1) DK140818B (en)
FR (1) FR2227644B1 (en)
GB (1) GB1433667A (en)
IT (1) IT1010046B (en)
LU (1) LU69932A1 (en)
NL (1) NL7405683A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9306017B2 (en) 2009-12-03 2016-04-05 Epcos Ag Bipolar transistor with lateral emitter and collector and method of production

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961159A (en) * 1982-09-30 1984-04-07 Toshiba Corp Semiconductor device and its manufacture
FR2694449B1 (en) * 1992-07-09 1994-10-28 France Telecom Multifunction electronic component, in particular element with negative dynamic resistance, and corresponding manufacturing process.
EP0809293B1 (en) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power semiconductor structure with lateral transistor driven by vertical transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9306017B2 (en) 2009-12-03 2016-04-05 Epcos Ag Bipolar transistor with lateral emitter and collector and method of production

Also Published As

Publication number Publication date
DK140818B (en) 1979-11-19
JPS5016480A (en) 1975-02-21
LU69932A1 (en) 1974-08-06
BE814252A (en) 1974-08-16
FR2227644B1 (en) 1977-10-28
DE2321426B2 (en) 1978-04-27
DE2321426A1 (en) 1974-11-07
NL7405683A (en) 1974-10-29
DE2321426C3 (en) 1978-12-21
FR2227644A1 (en) 1974-11-22
DK140818C (en) 1980-04-28
IT1010046B (en) 1977-01-10
ATA264574A (en) 1975-12-15
GB1433667A (en) 1976-04-28
AT331860B (en) 1976-08-25
CH567336A5 (en) 1975-09-30

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