BE814252A - Transistor bipolaire realise selon la technique des couches minces - Google Patents

Transistor bipolaire realise selon la technique des couches minces

Info

Publication number
BE814252A
BE814252A BE143672A BE143672A BE814252A BE 814252 A BE814252 A BE 814252A BE 143672 A BE143672 A BE 143672A BE 143672 A BE143672 A BE 143672A BE 814252 A BE814252 A BE 814252A
Authority
BE
Belgium
Prior art keywords
thin layer
bipolar transistor
made according
transistor made
layer technique
Prior art date
Application number
BE143672A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE814252A publication Critical patent/BE814252A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
BE143672A 1973-04-27 1974-04-26 Transistor bipolaire realise selon la technique des couches minces BE814252A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732321426 DE2321426C3 (de) 1973-04-27 1973-04-27 Bipolarer Dünnschicht-Transistor

Publications (1)

Publication Number Publication Date
BE814252A true BE814252A (fr) 1974-08-16

Family

ID=5879480

Family Applications (1)

Application Number Title Priority Date Filing Date
BE143672A BE814252A (fr) 1973-04-27 1974-04-26 Transistor bipolaire realise selon la technique des couches minces

Country Status (12)

Country Link
JP (1) JPS5016480A (fr)
AT (1) AT331860B (fr)
BE (1) BE814252A (fr)
CA (1) CA1007762A (fr)
CH (1) CH567336A5 (fr)
DE (1) DE2321426C3 (fr)
DK (1) DK140818B (fr)
FR (1) FR2227644B1 (fr)
GB (1) GB1433667A (fr)
IT (1) IT1010046B (fr)
LU (1) LU69932A1 (fr)
NL (1) NL7405683A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961159A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置及びその製造方法
FR2694449B1 (fr) * 1992-07-09 1994-10-28 France Telecom Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant.
EP0809293B1 (fr) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Structure semi-conductrice de puissance avec transistor latéral commandé par un transistor vertical
JP5551790B2 (ja) * 2009-12-03 2014-07-16 エプコス アクチエンゲゼルシャフト 横方向のエミッタおよびコレクタを有するバイポーラトランジスタならびに製造方法

Also Published As

Publication number Publication date
DE2321426B2 (de) 1978-04-27
IT1010046B (it) 1977-01-10
JPS5016480A (fr) 1975-02-21
DK140818C (fr) 1980-04-28
AT331860B (de) 1976-08-25
DE2321426C3 (de) 1978-12-21
CA1007762A (en) 1977-03-29
FR2227644B1 (fr) 1977-10-28
DE2321426A1 (de) 1974-11-07
GB1433667A (en) 1976-04-28
DK140818B (da) 1979-11-19
NL7405683A (fr) 1974-10-29
LU69932A1 (fr) 1974-08-06
ATA264574A (de) 1975-12-15
CH567336A5 (fr) 1975-09-30
FR2227644A1 (fr) 1974-11-22

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