DK140818B - Bipolar transistor i tyndlagsteknik. - Google Patents

Bipolar transistor i tyndlagsteknik.

Info

Publication number
DK140818B
DK140818B DK231774A DK231774A DK140818B DK 140818 B DK140818 B DK 140818B DK 231774 A DK231774 A DK 231774A DK 231774 A DK231774 A DK 231774A DK 140818 B DK140818 B DK 140818B
Authority
DK
Denmark
Prior art keywords
thin layer
bipolar transistor
layer technology
technology
bipolar
Prior art date
Application number
DK231774A
Other languages
Danish (da)
English (en)
Other versions
DK140818C (ja
Inventor
Karl Goser
Michael Pomper
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK140818B publication Critical patent/DK140818B/da
Application granted granted Critical
Publication of DK140818C publication Critical patent/DK140818C/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
DK231774A 1973-04-27 1974-04-26 Bipolar transistor i tyndlagsteknik. DK140818B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732321426 DE2321426C3 (de) 1973-04-27 1973-04-27 Bipolarer Dünnschicht-Transistor

Publications (2)

Publication Number Publication Date
DK140818B true DK140818B (da) 1979-11-19
DK140818C DK140818C (ja) 1980-04-28

Family

ID=5879480

Family Applications (1)

Application Number Title Priority Date Filing Date
DK231774A DK140818B (da) 1973-04-27 1974-04-26 Bipolar transistor i tyndlagsteknik.

Country Status (12)

Country Link
JP (1) JPS5016480A (ja)
AT (1) AT331860B (ja)
BE (1) BE814252A (ja)
CA (1) CA1007762A (ja)
CH (1) CH567336A5 (ja)
DE (1) DE2321426C3 (ja)
DK (1) DK140818B (ja)
FR (1) FR2227644B1 (ja)
GB (1) GB1433667A (ja)
IT (1) IT1010046B (ja)
LU (1) LU69932A1 (ja)
NL (1) NL7405683A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961159A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置及びその製造方法
FR2694449B1 (fr) * 1992-07-09 1994-10-28 France Telecom Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant.
EP0809293B1 (en) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power semiconductor structure with lateral transistor driven by vertical transistor
JP5551790B2 (ja) * 2009-12-03 2014-07-16 エプコス アクチエンゲゼルシャフト 横方向のエミッタおよびコレクタを有するバイポーラトランジスタならびに製造方法

Also Published As

Publication number Publication date
DE2321426B2 (de) 1978-04-27
IT1010046B (it) 1977-01-10
JPS5016480A (ja) 1975-02-21
DK140818C (ja) 1980-04-28
BE814252A (fr) 1974-08-16
AT331860B (de) 1976-08-25
DE2321426C3 (de) 1978-12-21
CA1007762A (en) 1977-03-29
FR2227644B1 (ja) 1977-10-28
DE2321426A1 (de) 1974-11-07
GB1433667A (en) 1976-04-28
NL7405683A (ja) 1974-10-29
LU69932A1 (ja) 1974-08-06
ATA264574A (de) 1975-12-15
CH567336A5 (ja) 1975-09-30
FR2227644A1 (ja) 1974-11-22

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