GB1431199A - Variable impedance circuits - Google Patents
Variable impedance circuitsInfo
- Publication number
- GB1431199A GB1431199A GB2208573A GB2208573A GB1431199A GB 1431199 A GB1431199 A GB 1431199A GB 2208573 A GB2208573 A GB 2208573A GB 2208573 A GB2208573 A GB 2208573A GB 1431199 A GB1431199 A GB 1431199A
- Authority
- GB
- United Kingdom
- Prior art keywords
- drain regions
- source
- layer
- gate electrodes
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009413 insulation Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H10D84/817—Combinations of field-effect devices and resistors only
Landscapes
- Networks Using Active Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4757872A JPS5323989B2 (enrdf_load_stackoverflow) | 1972-05-13 | 1972-05-13 | |
| JP7298072U JPS4932537U (enrdf_load_stackoverflow) | 1972-06-20 | 1972-06-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1431199A true GB1431199A (en) | 1976-04-07 |
Family
ID=26387754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2208573A Expired GB1431199A (en) | 1972-05-13 | 1973-05-09 | Variable impedance circuits |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT354518B (enrdf_load_stackoverflow) |
| CA (1) | CA999061A (enrdf_load_stackoverflow) |
| DE (1) | DE2323471C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2184815B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1431199A (enrdf_load_stackoverflow) |
| IT (1) | IT989208B (enrdf_load_stackoverflow) |
| NL (1) | NL7306701A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2507028A1 (fr) * | 1981-05-29 | 1982-12-03 | Hitachi Ltd | Dispositif a circuit electronique, utilisable notamment dans une memoire morte electriquement programmable |
| GB2256088B (en) * | 1991-05-23 | 1995-10-18 | Samsung Electronics Co Ltd | A gate-to-drain overlapped mos transistor fabrication process and structure thereof |
| US20180102404A1 (en) * | 2016-10-12 | 2018-04-12 | Mediatek Inc. | Impedance circuit with poly-resistor |
| US20180233499A1 (en) * | 2016-10-12 | 2018-08-16 | Mediatek Inc. | Impedance circuit with poly-resistor |
| EP3451398A1 (en) * | 2017-09-01 | 2019-03-06 | MediaTek Inc. | Impedance circuit with poly-resistor |
| US10461702B2 (en) | 2017-04-19 | 2019-10-29 | Mediatek Inc. | Amplifier circuit having poly resistor with biased depletion region |
-
1973
- 1973-05-09 GB GB2208573A patent/GB1431199A/en not_active Expired
- 1973-05-09 DE DE2323471A patent/DE2323471C2/de not_active Expired
- 1973-05-11 IT IT7323984A patent/IT989208B/it active
- 1973-05-11 CA CA170,994A patent/CA999061A/en not_active Expired
- 1973-05-11 AT AT417673A patent/AT354518B/de not_active IP Right Cessation
- 1973-05-14 NL NL7306701A patent/NL7306701A/xx not_active Application Discontinuation
- 1973-05-14 FR FR7317384A patent/FR2184815B1/fr not_active Expired
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2507028A1 (fr) * | 1981-05-29 | 1982-12-03 | Hitachi Ltd | Dispositif a circuit electronique, utilisable notamment dans une memoire morte electriquement programmable |
| GB2256088B (en) * | 1991-05-23 | 1995-10-18 | Samsung Electronics Co Ltd | A gate-to-drain overlapped mos transistor fabrication process and structure thereof |
| US20180102404A1 (en) * | 2016-10-12 | 2018-04-12 | Mediatek Inc. | Impedance circuit with poly-resistor |
| CN107947757A (zh) * | 2016-10-12 | 2018-04-20 | 联发科技股份有限公司 | 阻抗电路 |
| EP3309850A3 (en) * | 2016-10-12 | 2018-06-06 | MediaTek Inc. | Impedance circuit with poly-resistor |
| US20180233499A1 (en) * | 2016-10-12 | 2018-08-16 | Mediatek Inc. | Impedance circuit with poly-resistor |
| US10510823B2 (en) | 2016-10-12 | 2019-12-17 | Mediatek Inc. | Impedance circuit with poly-resistor |
| US10535651B2 (en) | 2016-10-12 | 2020-01-14 | Mediatek Inc. | Impedance circuit with poly-resistor |
| CN107947757B (zh) * | 2016-10-12 | 2021-12-07 | 联发科技股份有限公司 | 阻抗电路 |
| US10461702B2 (en) | 2017-04-19 | 2019-10-29 | Mediatek Inc. | Amplifier circuit having poly resistor with biased depletion region |
| EP3451398A1 (en) * | 2017-09-01 | 2019-03-06 | MediaTek Inc. | Impedance circuit with poly-resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| ATA417673A (de) | 1979-06-15 |
| FR2184815B1 (enrdf_load_stackoverflow) | 1977-09-02 |
| FR2184815A1 (enrdf_load_stackoverflow) | 1973-12-28 |
| DE2323471C2 (de) | 1985-09-12 |
| IT989208B (it) | 1975-05-20 |
| AT354518B (de) | 1979-01-10 |
| NL7306701A (enrdf_load_stackoverflow) | 1973-11-15 |
| DE2323471A1 (de) | 1973-11-29 |
| CA999061A (en) | 1976-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19930508 |