NL7306701A - - Google Patents

Info

Publication number
NL7306701A
NL7306701A NL7306701A NL7306701A NL7306701A NL 7306701 A NL7306701 A NL 7306701A NL 7306701 A NL7306701 A NL 7306701A NL 7306701 A NL7306701 A NL 7306701A NL 7306701 A NL7306701 A NL 7306701A
Authority
NL
Netherlands
Application number
NL7306701A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4757872A external-priority patent/JPS5323989B2/ja
Priority claimed from JP7298072U external-priority patent/JPS4932537U/ja
Application filed filed Critical
Publication of NL7306701A publication Critical patent/NL7306701A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators
    • H03H11/245Frequency-independent attenuators using field-effect transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/605Source, drain, or gate electrodes for FETs comprising highly resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817Combinations of field-effect devices and resistors only
NL7306701A 1972-05-13 1973-05-14 NL7306701A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4757872A JPS5323989B2 (enrdf_load_stackoverflow) 1972-05-13 1972-05-13
JP7298072U JPS4932537U (enrdf_load_stackoverflow) 1972-06-20 1972-06-20

Publications (1)

Publication Number Publication Date
NL7306701A true NL7306701A (enrdf_load_stackoverflow) 1973-11-15

Family

ID=26387754

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7306701A NL7306701A (enrdf_load_stackoverflow) 1972-05-13 1973-05-14

Country Status (7)

Country Link
AT (1) AT354518B (enrdf_load_stackoverflow)
CA (1) CA999061A (enrdf_load_stackoverflow)
DE (1) DE2323471C2 (enrdf_load_stackoverflow)
FR (1) FR2184815B1 (enrdf_load_stackoverflow)
GB (1) GB1431199A (enrdf_load_stackoverflow)
IT (1) IT989208B (enrdf_load_stackoverflow)
NL (1) NL7306701A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196627A (en) * 1981-05-29 1982-12-02 Hitachi Ltd Electronic circuit device
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
US10510823B2 (en) * 2016-10-12 2019-12-17 Mediatek Inc. Impedance circuit with poly-resistor
US10535651B2 (en) * 2016-10-12 2020-01-14 Mediatek Inc. Impedance circuit with poly-resistor
US10461702B2 (en) 2017-04-19 2019-10-29 Mediatek Inc. Amplifier circuit having poly resistor with biased depletion region
EP3998647A3 (en) * 2017-09-01 2022-07-06 MediaTek Inc. Impedance circuit with poly-resistor

Also Published As

Publication number Publication date
AT354518B (de) 1979-01-10
GB1431199A (en) 1976-04-07
DE2323471C2 (de) 1985-09-12
CA999061A (en) 1976-10-26
FR2184815B1 (enrdf_load_stackoverflow) 1977-09-02
FR2184815A1 (enrdf_load_stackoverflow) 1973-12-28
IT989208B (it) 1975-05-20
ATA417673A (de) 1979-06-15
DE2323471A1 (de) 1973-11-29

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Legal Events

Date Code Title Description
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